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CC2510F32RSP

Texas Instruments

CC2510F32RSP by Texas Instruments

CC2510F32RSP by Texas Instruments is a cellphone IC with 36 terminals in a square chip carrier package. It operates b/w -40 to 85°C, with a supply voltage of 3V. This RF and baseband circuit technology has a terminal pitch of 0.5mm and is suitable for industrial applications.

Median Price

$3.190

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1 parts In-Stock

1+ parts

-

100+ parts

$3.190

1k+ parts

$2.860

10k+ parts

$2.690

1

-

$3.190

$2.860

$2.690

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,709 parts In-Stock

1+ parts

$3.363

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3,709

$3.363

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Vyrian

USA . 6,347 parts In-Stock

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6,347

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Distributors (Availability)

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Native Components

USA . 590 parts In-Stock

1+ parts

$1.486

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-

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590

$1.486

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Northwest PG Solutions

USA . 1,027 parts In-Stock

1+ parts

$1.634

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1,027

$1.634

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Corphita

USA . 1,590 parts In-Stock

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$3.186

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1,590

$3.186

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Parana Technologies

USA . 2,297 parts In-Stock

1+ parts

$5.806

100+ parts

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$6.595

10k+ parts

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2,297

$5.806

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$6.595

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DigiPath Technology Company

USA . 571 parts In-Stock

1+ parts

$6.394

100+ parts

$5.882

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571

$6.394

$5.882

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ChromeModa Solutions

Germany . 387 parts In-Stock

1+ parts

$6.524

100+ parts

$5.350

1k+ parts

-

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387

$6.524

$5.350

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IDEA Electronic Components Group

UK . 35 parts In-Stock

1+ parts

$6.524

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$5.872

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35

$6.524

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$5.872

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Lixinc

USA . 18,019 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,122 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,748 parts In-Stock

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GreenTree Electronics

Israel . 4,100 parts In-Stock

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Kepictronics

USA . 106 parts In-Stock

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Overview

Upgrade your cellphone technology with the CC2510F32RSP by Texas Instruments, a high-quality Cellphone IC that promises unmatched performance and reliability. As a renowned manufacturer in the industry, Texas Instruments ensures top-notch products for all your electronic needs. This surface mount IC boasts a square package shape and a wide range of power supplies, making it versatile for various applications. With its advanced features and seamless integration, this product offers exceptional value and benefits to customers seeking cutting-edge solutions for their devices. Experience the difference with the CC2510F32RSP and elevate your electronics to the next level.

Feature Benefit Bullets

Surface Mount: YES

Surface mount technology allows for easy and efficient soldering of the IC onto circuit boards, making it convenient for manufacturers to assemble cellphones.

No. of Terminals: 36

Having 36 terminals provides a high level of connectivity and functionality for the cellphone IC, allowing it to support various features and functions.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this IC is suitable for use in cellphones that may encounter high temperatures during operation without risk of malfunction.

Package Style: CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

The package style of this IC ensures efficient heat dissipation, compact design, and compatibility with thin profile cellphone designs.

Technology: CMOS

Being based on CMOS technology, this cellphone IC offers low power consumption and high integration, making it energy-efficient and capable of supporting multiple functions.

Technical Specifications

Cellphone ICs CC2510F32RSP attributes and parameters. Explore more Cellphone ICs devices from Texas Instruments

Specs

JESD-30 Code:

S-XQCC-N36

JESD-609 Code:

e4

Length:

6 mm

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

36

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

LCC36,.25SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

2.5/3.3

Qualification:

Not Qualified

Maximum Seated Height:

.9 mm

Sub-Category:

Other Telecom ICs

Nominal Supply Voltage:

3 V

Surface Mount:

YES

Technology:

CMOS

Telecom IC Type:

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

6 mm

Trade Compliance

CC2510F32RSP Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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