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CC2510F8RHH

Texas Instruments

CC2510F8RHH by Texas Instruments

CC2510F8RHH by Texas Instruments is a cellphone IC with 36 terminals in a square chip carrier package. It operates at temperatures ranging from -40 to 85°C and has a supply voltage of 3V. This RF and baseband circuit technology features CMOS, nickel palladium gold finish, and is suitable for industrial applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,079 parts In-Stock

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Digiode

USA . 359 parts In-Stock

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359

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Native Components

USA . 188 parts In-Stock

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$0.496

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188

$0.496

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Northwest PG Solutions

USA . 1,560 parts In-Stock

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$0.546

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$0.481

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Parana Technologies

USA . 2,355 parts In-Stock

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$11.047

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$11.508

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AZTECH Wire

Italy . 823 parts In-Stock

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$12.338

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823

$12.338

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IDEA Electronic Components Group

UK . 2,332 parts In-Stock

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$12.412

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$11.791

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$11.171

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2,332

$12.412

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ChromeModa Solutions

Germany . 1,929 parts In-Stock

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$12.412

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$10.178

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One Stop Electronics

USA . 151 parts In-Stock

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$527.000

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DigiPath Technology Company

USA . 2,212 parts In-Stock

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$11.191

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Corphita

USA . 125 parts In-Stock

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Overview

Elevate your cellphone's performance with the Texas Instruments CC2510F8RHH. Crafted with precision and expertise, this Cellphone IC guarantees top-notch quality and reliability. Designed for seamless integration, this product offers unparalleled value and benefits to customers looking to enhance their mobile devices. Whether you're a tech enthusiast or a casual user, this RF and baseband circuit is sure to impress with its industrial-grade technology and innovative features. Trust Texas Instruments to deliver cutting-edge solutions for all your telecom needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and reliability to withstand various environmental conditions.

Surface Mount: YES

Enables easy and efficient assembly onto circuit boards.

Power Supplies (V): 2.5/3.3

Versatile power supply options for compatibility with different systems.

No. of Terminals: 36

Sufficient terminals for connectivity and functionality within the device.

Maximum Operating Temperature: 85 °C

Allows the IC to operate efficiently in high-temperature environments.

Technology: CMOS

Utilizes Complementary Metal-Oxide-Semiconductor technology for efficient power consumption and performance.

Terminal Pitch: 0.5 mm

Provides precise terminal spacing for reliable connections and signal transmission.

Technical Specifications

Cellphone ICs CC2510F8RHH attributes and parameters. Explore more Cellphone ICs devices from Texas Instruments

Specs

JESD-30 Code:

S-PQCC-N36

JESD-609 Code:

e4

Length:

6 mm

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

36

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC36,.25SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

2.5/3.3

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Sub-Category:

Other Telecom ICs

Nominal Supply Voltage:

3 V

Surface Mount:

YES

Technology:

CMOS

Telecom IC Type:

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

6 mm

Trade Compliance

CC2510F8RHH Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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