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CC2510F16RSPRG3

Texas Instruments

CC2510F16RSPRG3 by Texas Instruments

CC2510F16RSPRG3 by Texas Instruments is a cellphone IC with 36 terminals in a square package. It operates b/w -40 to 85°C, with power supplies of 2.5/3.3V ideal for RF and baseband circuits. This CMOS technology chip carrier has a very thin profile, suitable for industrial telecom applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,587 parts In-Stock

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Digiode

USA . 1,349 parts In-Stock

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AZTECH Wire

Italy . 707 parts In-Stock

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$13.343

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707

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Parana Technologies

USA . 1,662 parts In-Stock

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$14.710

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$15.148

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DigiPath Technology Company

USA . 1,959 parts In-Stock

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$16.197

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ChromeModa Solutions

Germany . 3,727 parts In-Stock

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$13.553

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IDEA Electronic Components Group

UK . 2,009 parts In-Stock

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$16.528

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$15.702

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$14.875

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$14.875

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One Stop Electronics

USA . 1,083 parts In-Stock

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$24.000

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Corphita

USA . 3,150 parts In-Stock

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Northwest PG Solutions

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Native Components

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Overview

Bring your cellphone designs to the next level with the CC2510F16RSPRG3 by Texas Instruments. As a trusted manufacturer in the industry, Texas Instruments delivers quality products that exceed expectations. Ideal for a wide range of applications, this Cellphone IC offers unparalleled value, benefits, and advantages to customers. With a surface mount design, square package shape, and advanced technology, this IC provides reliable performance and efficiency. Upgrade your devices with the CC2510F16RSPRG3 and experience enhanced functionality like never before.

Feature Benefit Bullets

Surface Mount: YES

Surface mount technology allows for easy and efficient installation on PCBs, saving time and space.

Package Shape: SQUARE

The square package shape provides a compact form factor, ideal for space-constrained applications.

Power Supplies (V): 2.5/3.3

Support for multiple power supply voltages allows for flexibility in system design and compatibility with various power sources.

No. of Terminals: 36

Having a high number of terminals enables connectivity to a wide range of components and peripherals.

Package Style (Meter): CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

The combination of chip carrier, heat sink/slug, and very thin profile package styles offers thermal management and space-saving benefits.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this product can withstand tough environmental conditions and extended usage.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature ensures reliable operation in cold environments without risk of damage.

Terminal Finish: NICKEL PALLADIUM GOLD

The use of nickel, palladium, and gold terminal finish provides excellent conductivity, corrosion resistance, and solderability.

Terminal Position: QUAD

Quad terminal position facilitates easy soldering and enhances electrical performance through stable connections.

Maximum Seated Height: 0.9 mm

The low maximum seated height allows for a slim and compact design, suitable for thin devices and space-constrained layouts.

Width: 6 mm

A narrow width contributes to the overall compactness and efficiency of the product's form factor.

Maximum Time At Peak Reflow Temperature (s): 30

The short maximum time at peak reflow temperature reduces the risk of heat-related damage during soldering processes.

Peak Reflow Temperature °C: 260

The high peak reflow temperature enables reliable soldering connections and ensures product durability under thermal stresses.

Length: 6 mm

The compact length of 6 mm contributes to the overall small footprint and space-saving design of the product.

Temperature Grade: INDUSTRIAL

Industrial temperature grade ensures reliability and performance consistency in harsh operating environments.

Technology: CMOS

CMOS technology offers low power consumption, high speed, and compatibility with various digital systems, making it an efficient choice for cellular ICs.

Terminal Form: NO LEAD

The no-lead terminal form complies with environmental regulations such as RoHS and provides a lead-free and eco-friendly solution.

Telecom IC Type: RF AND BASEBAND CIRCUIT

Combining RF and baseband circuit functionalities in a single IC offers integrated and efficient communication processing for cellular applications.

Nominal Supply Voltage: 3 V

The 3 V nominal supply voltage is common in mobile devices, ensuring compatibility and efficient power management.

Terminal Pitch: 0.5 mm

The fine terminal pitch of 0.5 mm enables high-density integration and precise connections in compact electronic designs.

Moisture Sensitivity Level (MSL): 3

MSL 3 indicates that the product can withstand moderate exposure to moisture during storage and assembly processes.

Technical Specifications

Cellphone ICs CC2510F16RSPRG3 attributes and parameters. Explore more Cellphone ICs devices from Texas Instruments

Specs

JESD-30 Code:

S-XQCC-N36

JESD-609 Code:

e4

Length:

6 mm

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

36

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

LCC36,.25SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

2.5/3.3

Qualification:

Not Qualified

Maximum Seated Height:

.9 mm

Sub-Category:

Other Telecom ICs

Nominal Supply Voltage:

3 V

Surface Mount:

YES

Technology:

CMOS

Telecom IC Type:

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

6 mm

Trade Compliance

CC2510F16RSPRG3 Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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