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CC1050/T&R

Texas Instruments

CC1050/T&R by Texas Instruments

CC1050/T&R by Texas Instruments is a cellphone IC with 24 terminals, operating at temperatures from -40 to 85°C. It features a supply voltage of 3V, CMOS technology, and RF/baseband circuit for telecom applications. The package is small outline, thin profile, with 0.65mm terminal pitch suitable for surface mount assembly.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 3,510 parts In-Stock

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Digiode

USA . 2,561 parts In-Stock

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Native Components

USA . 779 parts In-Stock

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$0.729

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779

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Northwest PG Solutions

USA . 378 parts In-Stock

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$0.802

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Parana Technologies

USA . 1,731 parts In-Stock

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$10.382

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$10.896

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DigiPath Technology Company

USA . 1,383 parts In-Stock

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$11.432

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$10.517

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ChromeModa Solutions

Germany . 5,655 parts In-Stock

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$11.665

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$9.565

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IDEA Electronic Components Group

UK . 1,976 parts In-Stock

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$11.665

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$11.082

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$10.498

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AZTECH Wire

Italy . 564 parts In-Stock

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One Stop Electronics

USA . 1,315 parts In-Stock

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Corphita

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Overview

Unlock the potential of your cellphone with the CC1050/T&R by Texas Instruments, a high-quality RF and baseband circuit designed to enhance your device's performance. Manufactured with precision and expertise, this cellphone IC offers unparalleled value and benefits to customers seeking top-notch technology. With a compact design and industrial-grade temperature grade, the CC1050/T&R is perfect for a wide range of applications, ensuring seamless connectivity and efficiency. Trust Texas Instruments for cutting-edge solutions that bring innovation to your fingertips.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the ICs suitable for mobile phones where weight and durability are important factors.

Surface Mount: YES

Surface mount technology allows for easy and efficient assembly onto the printed circuit board, saving space and enhancing the overall aesthetic of the device.

Package Shape: RECTANGULAR

The rectangular package shape is commonly used in mobile phone ICs, making it easy for manufacturers to integrate the IC into their design.

Power Supplies (V): 2.5/3.3

Having multiple power supply options gives flexibility in designing the power management system of the cellphone IC, allowing for optimized performance and efficiency.

No. of Terminals: 24

A higher number of terminals allow for more functionalities to be integrated into the IC, enhancing the overall capability of the cellphone.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

The small outline, thin profile, and shrink pitch package style helps in reducing the overall size of the IC, making it suitable for compact mobile phone designs.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, the IC can withstand intense operating conditions without compromising its performance, ensuring reliability in smartphone usage.

Minimum Operating Temperature: -40 °C

The ability to operate at low temperatures allows the cellphone IC to function optimally in various environments, making it a versatile choice for users in different climates.

Terminal Position: DUAL

Dual terminal positions enhance the connectivity options of the IC, making it easier to integrate with other components in the mobile phone circuitry.

Maximum Seated Height: 1.2 mm

This low profile height enables the cellphone IC to be incorporated into slim devices, contributing to the sleek design of the smartphone.

Width: 4.4 mm

The compact width of the IC allows for space-saving integration into the mobile phone design, ensuring efficient use of internal space within the device.

Length: 7.8 mm

The length of the IC is designed to fit the standard dimensions of mobile phone circuit boards, facilitating easy installation and compatibility with existing designs.

Temperature Grade: INDUSTRIAL

Industrial-grade temperature tolerance ensures the cellphone IC can operate reliably in harsh conditions, making it suitable for use in rugged mobile devices.

Technology: CMOS

CMOS technology offers low power consumption and high speed operation, making the cellphone IC energy-efficient and responsive for optimal smartphone performance.

Terminal Form: GULL WING

The gull wing terminal form provides secure and reliable connections, ensuring stable performance of the mobile phone IC in various operating conditions.

Telecom IC Type: RF AND BASEBAND CIRCUIT

The integration of RF and baseband circuits in the cellphone IC allows for seamless communication and data processing, enhancing the overall connectivity and performance of the mobile phone.

Nominal Supply Voltage: 3 V

The nominal supply voltage of 3V is commonly used in mobile phone applications, ensuring compatibility with existing power management systems in smartphones.

Terminal Pitch: 0.65 mm

The fine terminal pitch allows for high-density mounting of the IC on the PCB, maximizing space utilization and enabling complex smartphone functionalities.

Technical Specifications

Cellphone ICs CC1050/T&R attributes and parameters. Explore more Cellphone ICs devices from Texas Instruments

Specs

JESD-30 Code:

R-PDSO-G24

Length:

7.8 mm

No. of Functions:

1

No. of Terminals:

24

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP24,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Power Supplies (V):

2.5/3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sub-Category:

Other Telecom ICs

Nominal Supply Voltage:

3 V

Surface Mount:

YES

Technology:

CMOS

Telecom IC Type:

Temperature Grade:

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Width:

4.4 mm

Trade Compliance

CC1050/T&R Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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