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CC1000-RWP2

Texas Instruments

CC1000-RWP2 by Texas Instruments

CC1000-RWP2 by Texas Instruments is a Cellphone IC with 28 terminals in a rectangular package. It operates at temperatures from -40 to 85°C, suitable for industrial use. This RF and baseband circuit has a supply voltage of 3V, making it ideal for cellphone applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,534 parts In-Stock

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Digiode

USA . 4,189 parts In-Stock

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LWI Electronics Inc

India . 30 parts In-Stock

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30

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AZTECH Wire

Italy . 755 parts In-Stock

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$7.687

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755

$7.687

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Parana Technologies

USA . 1,320 parts In-Stock

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$13.243

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$13.749

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$13.243

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$13.749

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DigiPath Technology Company

USA . 895 parts In-Stock

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$14.582

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895

$14.582

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ChromeModa Solutions

Germany . 3,048 parts In-Stock

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$14.880

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$12.202

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3,048

$14.880

$12.202

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IDEA Electronic Components Group

UK . 834 parts In-Stock

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$14.880

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$14.136

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$13.392

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834

$14.880

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One Stop Electronics

USA . 1,470 parts In-Stock

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$343.000

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Corphita

USA . 3,849 parts In-Stock

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Northwest PG Solutions

USA . 2,121 parts In-Stock

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Native Components

USA . 238 parts In-Stock

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Overview

Upgrade your cellphone's performance with the CC1000-RWP2 by Texas Instruments. Crafted with precision and expertise, this Cellphone IC offers seamless integration and enhanced functionality for your device. Whether you're a tech enthusiast or a professional in the industry, this product delivers unparalleled quality and reliability. With a focus on innovation and excellence, Texas Instruments ensures that you get the best value and benefits from their products. Elevate your mobile experience and stay ahead of the curve with the CC1000-RWP2.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material is known for its durability and resistance to moisture, making this IC package suitable for a wide range of applications.

Surface Mount: YES

Surface mount technology allows for easy and efficient assembly on PCBs, saving space and reducing production costs.

Power Supplies (V): 2.5/3.3

Supports multiple power supply voltages, providing flexibility in design and compatibility with various systems.

Package Shape: RECTANGULAR

Rectangular shape is commonly used for IC packages, making it easier to integrate into circuit designs and PCB layouts.

No. of Terminals: 28

Having 28 terminals allows for more connectivity options and functionality in the cellphone IC.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this IC can withstand demanding conditions and operate reliably in various environments.

Minimum Operating Temperature: -40 °C

The wide temperature range ensures stable performance even in extreme cold conditions.

Width: 2.339 mm

Compact width size helps in saving space on the PCB and allows for more components to be integrated in a limited area.

Length: 4.034 mm

The length of the IC is optimized for efficient placement on the PCB and overall space utilization in the design.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, resulting in efficient operation and improved battery life in mobile devices.

Technical Specifications

Cellphone ICs CC1000-RWP2 attributes and parameters. Explore more Cellphone ICs devices from Texas Instruments

Specs

JESD-30 Code:

R-PBGA-B28

Length:

4.034 mm

No. of Functions:

1

No. of Terminals:

28

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA28,4X7,20

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

2.5/3.3

Qualification:

Not Qualified

Maximum Seated Height:

.652 mm

Sub-Category:

Other Telecom ICs

Nominal Supply Voltage:

3 V

Surface Mount:

YES

Technology:

CMOS

Telecom IC Type:

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

2.339 mm

Trade Compliance

CC1000-RWP2 Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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