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CC1000-RTR1

Texas Instruments

CC1000-RTR1 by Texas Instruments

CC1000-RTR1 by Texas Instruments is a cellphone IC with 28 terminals, operating at -40 to 85°C. It features a supply voltage of 2.5/3.3V, RF and baseband circuit for telecom applications, and CMOS technology in a small outline package. Ideal for industrial use due to its nickel palladium gold finish and dual terminal position.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Vyrian

USA . 8,728 parts In-Stock

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Pegasus Components GmbH

Germany . 2,450 parts In-Stock

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Infinite Electronics LLP

India . 2,129 parts In-Stock

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Digiode

USA . 2,083 parts In-Stock

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ACDS - Activité Composants Distribution Service

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Extreme Components

USA . 710 parts In-Stock

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Native Components

USA . 747 parts In-Stock

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Northwest PG Solutions

USA . 946 parts In-Stock

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Parana Technologies

USA . 2,247 parts In-Stock

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$10.194

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DigiPath Technology Company

USA . 595 parts In-Stock

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$11.225

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$10.327

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ChromeModa Solutions

Germany . 2,055 parts In-Stock

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$11.454

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$9.392

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IDEA Electronic Components Group

UK . 1,870 parts In-Stock

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AZTECH Wire

Italy . 705 parts In-Stock

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Ampacity Inc.

Singapore . 496 parts In-Stock

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One Stop Electronics

USA . 287 parts In-Stock

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Perfect Parts

USA . 36,400 parts In-Stock

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Lixinc

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Glotronic Ltd.

UK . 3,790 parts In-Stock

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Kepictronics

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Authorized Procurement Solutions

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Corphita

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Overview

Enhance your cellphone's performance with the CC1000-RTR1 from Texas Instruments. Crafted with precision and expertise, this RF and baseband circuit IC offers unmatched quality and reliability. Designed for optimal functionality, this small outline, thin profile package provides seamless integration into your device. Experience enhanced communication capabilities and improved efficiency with this advanced technology. Upgrade your cellphone experience today with the CC1000-RTR1 by Texas Instruments.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material offers good protection for the internal components of the IC, making it durable and reliable.

Surface Mount: YES

Allows for easy and efficient installation on circuit boards, saving time and effort during manufacturing.

Maximum Operating Temperature: 85 °C

Can withstand higher temperatures, ensuring stable performance even in challenging environments.

Technology: CMOS

CMOS technology is known for its low power consumption and high speed, making the IC efficient and fast.

Nominal Supply Voltage: 3 V

Compatible with standard voltage levels, making it easy to integrate into existing systems.

Technical Specifications

Cellphone ICs CC1000-RTR1 attributes and parameters. Explore more Cellphone ICs devices from Texas Instruments

Specs

JESD-30 Code:

R-PDSO-G28

JESD-609 Code:

e4

Length:

9.7 mm

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

28

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP28,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

2.5/3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sub-Category:

Other Telecom ICs

Maximum Supply Current:

.001 mA

Nominal Supply Voltage:

3 V

Surface Mount:

YES

Technology:

CMOS

Telecom IC Type:

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

4.4 mm

Trade Compliance

CC1000-RTR1 Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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