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CC1000PWG3

Texas Instruments

CC1000PWG3 by Texas Instruments

CC1000PWG3 by Texas Instruments is a cellphone IC with 28 terminals, operating at temperatures from -40 to 85°C. It features a supply voltage of 2.5/3.3V and telecom IC type for RF and baseband circuits. The package is small outline, thin profile, with shrink pitch, suitable for industrial applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,601 parts In-Stock

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Digiode

USA . 1,888 parts In-Stock

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1,888

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Distributors (Availability)

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Native Components

USA . 572 parts In-Stock

1+ parts

$0.280

100+ parts

-

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$0.269

572

$0.280

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$0.269

Northwest PG Solutions

USA . 1,552 parts In-Stock

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$0.308

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$0.272

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$0.308

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$0.272

Parana Technologies

USA . 815 parts In-Stock

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$15.958

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$16.308

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815

$15.958

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$16.308

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DigiPath Technology Company

USA . 1,989 parts In-Stock

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$17.571

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$16.166

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1,989

$17.571

$16.166

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ChromeModa Solutions

Germany . 6,580 parts In-Stock

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$17.930

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$14.703

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$17.930

$14.703

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IDEA Electronic Components Group

UK . 763 parts In-Stock

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$17.930

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$17.034

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$16.137

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763

$17.930

$17.034

$16.137

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AZTECH Wire

Italy . 346 parts In-Stock

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$19.719

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$19.719

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One Stop Electronics

USA . 1,055 parts In-Stock

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$128.000

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$128.000

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Ampacity Inc.

Singapore . 616 parts In-Stock

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$137.000

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616

$137.000

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Semicontronic

India . 211 parts In-Stock

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$672.000

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$655.200

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$651.840

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211

$672.000

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$651.840

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Glotronic Ltd.

UK . 3,790 parts In-Stock

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Corphita

USA . 1,762 parts In-Stock

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Corohmni

South Africa . 436 parts In-Stock

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436

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Overview

Unlock the full potential of your cellphone with the CC1000PWG3 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments guarantees top-notch quality and reliability. This versatile Cellphone IC is designed for optimal performance, offering seamless connectivity and enhanced functionality. Whether you're looking to improve signal reception or enhance data processing, the CC1000PWG3 delivers unparalleled value and benefits. Upgrade your device today and experience the difference!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package lightweight and durable, making it suitable for use in mobile devices.

Surface Mount: YES

Being surface mount allows for easy and efficient assembly onto PCBs, saving time and reducing production costs.

Power Supplies (V): 2.5/3.3

Supporting multiple power supply voltages allows for flexibility in design and compatibility with different systems.

No. of Terminals: 28

Having a high number of terminals enables the IC to interface with various components and functionalities within the cellphone.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, the IC can withstand harsh environmental conditions and extended operation without overheating.

Width: 4.4 mm

Compact width makes the IC suitable for space-constrained mobile devices while still providing necessary functionality.

Technology: CMOS

CMOS technology offers low power consumption, high noise immunity, and compatibility with a wide range of digital and analog circuits.

Nominal Supply Voltage: 3 V

Suitable supply voltage for efficient operation and compatibility with standard power sources in mobile devices.

Technical Specifications

Cellphone ICs CC1000PWG3 attributes and parameters. Explore more Cellphone ICs devices from Texas Instruments

Specs

JESD-30 Code:

R-PDSO-G28

JESD-609 Code:

e4

Length:

9.7 mm

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

28

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP28,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

2.5/3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sub-Category:

Other Telecom ICs

Nominal Supply Voltage:

3 V

Surface Mount:

YES

Technology:

CMOS

Telecom IC Type:

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

4.4 mm

Trade Compliance

CC1000PWG3 Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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