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TRF5901PTG4

Texas Instruments

TRF5901PTG4 by Texas Instruments

TRF5901PTG4 by Texas Instruments is a cellphone IC with 48 terminals in a square package. It operates at -40 to 85°C, with supply voltage of 3V and current of 0.053mA. This RF and baseband circuit has a low profile flatpack style for industrial telecom applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,765 parts In-Stock

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8,765

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Digiode

USA . 546 parts In-Stock

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546

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Distributors (Availability)

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AZTECH Wire

Italy . 464 parts In-Stock

1+ parts

$13.270

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464

$13.270

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Parana Technologies

USA . 1,669 parts In-Stock

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$13.316

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$13.824

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1,669

$13.316

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$13.824

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DigiPath Technology Company

USA . 1,772 parts In-Stock

1+ parts

$14.663

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$13.490

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1,772

$14.663

$13.490

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ChromeModa Solutions

Germany . 2,247 parts In-Stock

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$14.962

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$12.269

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2,247

$14.962

$12.269

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IDEA Electronic Components Group

UK . 1,386 parts In-Stock

1+ parts

$14.962

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$14.214

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$13.466

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1,386

$14.962

$14.214

$13.466

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Component Stockers USA

USA . 362 parts In-Stock

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$99.990

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362

$99.990

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One Stop Electronics

USA . 1,508 parts In-Stock

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$411.000

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Corphita

USA . 1,610 parts In-Stock

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1,610

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Overview

Upgrade your cellphone technology with the TRF5901PTG4 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments ensures top-quality products that deliver exceptional performance. This versatile RF and baseband circuit IC is perfect for a variety of applications, offering customers reliable connectivity and seamless integration. Experience the value and benefits of this cutting-edge technology, designed to enhance your mobile device experience like never before. Trust Texas Instruments to provide you with the best in cellphone ICs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and cost-effective, making the product easy to handle and reducing manufacturing costs.

Surface Mount: YES

Surface mount technology allows for efficient assembly and space saving on circuit boards.

Power Supplies (V): 3

Operates at a standard voltage, making it compatible with a wide range of systems and applications.

Maximum Operating Temperature: 85 °C

Can withstand high temperatures without risking damage or malfunction, ensuring reliable performance in various environments.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the product energy efficient and reliable.

Telecom IC Type: RF AND BASEBAND CIRCUIT

Combining RF and baseband circuits in one IC helps streamline design and improve overall performance in cellphone communication.

Technical Specifications

Cellphone ICs TRF5901PTG4 attributes and parameters. Explore more Cellphone ICs devices from Texas Instruments

Specs

JESD-30 Code:

S-PQFP-G48

JESD-609 Code:

e4

Length:

7 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

48

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

QFP48,.35SQ,20

Package Shape:

Package Style (Meter):

FLATPACK, LOW PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

3

Qualification:

Not Qualified

Maximum Seated Height:

1.6 mm

Sub-Category:

Other Telecom ICs

Maximum Supply Current:

.053 mA

Nominal Supply Voltage:

3 V

Surface Mount:

YES

Technology:

CMOS

Telecom IC Type:

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

7 mm

Trade Compliance

TRF5901PTG4 Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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