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TRF5901PTRG4

Texas Instruments

TRF5901PTRG4 by Texas Instruments

TRF5901PTRG4 by Texas Instruments is a cellphone IC with 48 terminals in a square package. It operates at -40 to 85°C, with supply voltage of 3V and current draw of 0.053mA. This RF and baseband circuit has CMOS technology, suitable for telecom applications due to its low profile design and fine pitch style.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 7,008 parts In-Stock

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Digiode

USA . 1,269 parts In-Stock

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1,269

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Distributors (Availability)

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Parana Technologies

USA . 1,936 parts In-Stock

1+ parts

$11.639

100+ parts

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$12.034

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1,936

$11.639

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$12.034

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DigiPath Technology Company

USA . 1,285 parts In-Stock

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$12.816

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1,285

$12.816

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ChromeModa Solutions

Germany . 808 parts In-Stock

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$13.078

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$10.724

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808

$13.078

$10.724

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IDEA Electronic Components Group

UK . 425 parts In-Stock

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$13.078

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$12.424

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$11.770

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425

$13.078

$12.424

$11.770

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AZTECH Wire

Italy . 873 parts In-Stock

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$16.145

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873

$16.145

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One Stop Electronics

USA . 833 parts In-Stock

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$615.000

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833

$615.000

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Lixinc

USA . 6,858 parts In-Stock

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6,858

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Corphita

USA . 634 parts In-Stock

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Overview

Elevate your cellphone performance with the TRF5901PTRG4 by Texas Instruments. Known for their top-quality products, Texas Instruments delivers reliability and innovation in the realm of Cellphone ICs. This sleek and powerful device offers seamless integration and enhanced functionality, making it a must-have for any mobile technology enthusiast. Experience the difference with Texas Instruments and unlock the true potential of your smartphone.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the internal components of the cellphone ICs, making them more resistant to environmental factors.

Surface Mount: YES

Surface mount technology allows for easier and more efficient assembly of the cellphone ICs onto circuit boards, saving time and cost in manufacturing processes.

Package Shape: SQUARE

The square shape of the package provides a compact and space-efficient design, ideal for cellphones where space is limited.

Power Supplies (V): 3

Operating at a standard voltage of 3V ensures compatibility with most cellphone systems and helps in efficient power management.

No. of Terminals: 48

Having a high number of terminals allows for more connectivity options and functionalities within the cellphone ICs, making them versatile and capable of handling complex tasks.

Package Style (Meter): FLATPACK, LOW PROFILE, FINE PITCH

This package style provides a slim profile and fine pitch for high-density integration on the circuit board, enabling efficient use of space and improved performance.

Maximum Operating Temperature: 85 °C

A high maximum operating temperature ensures reliable performance even under extended usage and in various environmental conditions.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature allows the cellphone ICs to function in cold environments without any performance degradation, increasing their versatility.

Terminal Finish: NICKEL PALLADIUM GOLD

This terminal finish provides excellent conductivity and corrosion resistance, ensuring long-term reliability and optimal performance of the cellphone ICs.

Terminal Position: QUAD

Quad terminal position allows for efficient connection and soldering onto the circuit board, ensuring secure and stable placement of the cellphone ICs.

Maximum Seated Height: 1.6 mm

The low maximum seated height enables a sleek and slim design of the cellphone ICs, making them suitable for compact mobile devices.

Width: 7 mm

The compact width of the cellphone ICs allows for space-efficient integration into the overall design of the mobile device, contributing to a sleek and modern appearance.

Maximum Time At Peak Reflow Temperature (s): 30

This specification ensures that the cellphone ICs can withstand peak reflow temperatures for a sufficient amount of time during manufacturing processes, ensuring proper soldering and assembly.

Peak Reflow Temperature °C: 260

The high peak reflow temperature tolerance indicates the durability and resilience of the cellphone ICs during manufacturing processes, ensuring reliable performance.

Length: 7 mm

The compact length of the cellphone ICs allows for easy integration into the overall design of the mobile device, contributing to a sleek and modern appearance.

Temperature Grade: INDUSTRIAL

The industrial temperature grade ensures that the cellphone ICs can operate effectively in a wide range of temperature conditions, making them suitable for industrial applications.

Technology: CMOS

CMOS technology offers low power consumption, high speed, and reliable performance, making the cellphone ICs energy-efficient and suitable for high-performance mobile devices.

Terminal Form: GULL WING

The gull wing terminal form allows for efficient soldering and connection of the cellphone ICs onto the circuit board, ensuring secure placement and reliable performance.

Maximum Supply Current: 0.053 mA

The low maximum supply current indicates the energy-efficient operation of the cellphone ICs, helping to conserve battery power and extend the device's runtime.

Telecom IC Type: RF AND BASEBAND CIRCUIT

Combining RF and baseband circuit functionality within the cellphone ICs provides comprehensive communication capabilities, making them suitable for telecom applications.

Nominal Supply Voltage: 3 V

Operating at a standard voltage of 3V ensures compatibility with most cellphone systems and helps in efficient power management.

Terminal Pitch: 0.5 mm

The fine terminal pitch allows for high-density integration of the cellphone ICs onto the circuit board, enabling compact designs and efficient use of space.

Technical Specifications

Cellphone ICs TRF5901PTRG4 attributes and parameters. Explore more Cellphone ICs devices from Texas Instruments

Specs

JESD-30 Code:

S-PQFP-G48

JESD-609 Code:

e4

Length:

7 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

48

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

QFP48,.35SQ,20

Package Shape:

Package Style (Meter):

FLATPACK, LOW PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

3

Qualification:

Not Qualified

Maximum Seated Height:

1.6 mm

Sub-Category:

Other Telecom ICs

Maximum Supply Current:

.053 mA

Nominal Supply Voltage:

3 V

Surface Mount:

YES

Technology:

CMOS

Telecom IC Type:

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

7 mm

Trade Compliance

TRF5901PTRG4 Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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