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LMV225SDX

Texas Instruments

LMV225SDX by Texas Instruments

LMV225SDX by Texas Instruments is a Cellphone IC with 6 terminals, operating temperature range of -40 to 85°C. It features a small outline package style and is suitable for RF and baseband circuits in telecom applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,493 parts In-Stock

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Digiode

USA . 2,365 parts In-Stock

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Anansix

USA . 1,788 parts In-Stock

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Parana Technologies

USA . 55 parts In-Stock

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$9.392

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$10.010

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55

$9.392

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$10.010

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ChromeModa Solutions

Germany . 2,434 parts In-Stock

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$10.553

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$8.653

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IDEA Electronic Components Group

UK . 576 parts In-Stock

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$10.553

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$10.025

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$9.498

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576

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$9.498

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AZTECH Wire

Italy . 199 parts In-Stock

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$15.485

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One Stop Electronics

USA . 605 parts In-Stock

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$489.000

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$489.000

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Corphita

USA . 1,757 parts In-Stock

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DigiPath Technology Company

USA . 800 parts In-Stock

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$9.515

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Perfect Parts

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GreenTree Electronics

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Overview

Unleash the power of cutting-edge technology with the LMV225SDX by Texas Instruments. Crafted with precision and expertise, this cellphone IC is designed to elevate your mobile experience. Whether you're looking for seamless connectivity or enhanced performance, this product delivers. With its sleek design and top-tier quality, the LMV225SDX is a must-have for tech enthusiasts seeking reliability and innovation. Upgrade your device today and discover the endless possibilities that await you.

Feature Benefit Bullets

Surface Mount: YES

Surface mount technology allows for easy and efficient assembly onto circuit boards, reducing manufacturing costs.

Package Shape: RECTANGULAR

Rectangular packages are commonly used for integrated circuits as they provide a good balance between size and ease of handling.

No. of Terminals: 6

Having 6 terminals allows for multiple connections and functionalities within the IC.

Package Style: SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

This package style offers a compact form factor with heat dissipation capabilities, making it suitable for space-constrained applications.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this IC can withstand rigorous operating conditions without degradation in performance.

Minimum Operating Temperature: -40 °C

The wide temperature range ensures the IC can function reliably in both extreme cold and hot environments.

Terminal Finish: TIN

Tin terminals provide good electrical conductivity and corrosion resistance, ensuring a reliable connection over time.

Telecom IC Type: RF AND BASEBAND CIRCUIT

This IC is designed specifically for telecommunications applications, offering optimized performance for RF and baseband circuits.

Nominal Supply Voltage: 2.7 V

The nominal supply voltage of 2.7 volts is suitable for low-power operation, contributing to energy efficiency and extended battery life in mobile devices.

Technical Specifications

Cellphone ICs LMV225SDX attributes and parameters. Explore more Cellphone ICs devices from Texas Instruments

Specs

JESD-30 Code:

R-XDSO-N6

JESD-609 Code:

e3

Length:

2.5 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

6

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Qualification:

Not Qualified

Maximum Seated Height:

.8 mm

Nominal Supply Voltage:

2.7 V

Surface Mount:

YES

Telecom IC Type:

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Width:

2.2 mm

Trade Compliance

LMV225SDX Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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