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CC1260RGZR

Texas Instruments

CC1260RGZR by Texas Instruments

CC1260RGZR by Texas Instruments is a cellphone IC with 48 terminals in a square chip carrier package. It operates b/w -40 to 105°C, suitable for industrial use. This RF and baseband circuit has a nominal voltage of 3.3V, making it ideal for telecom applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,293 parts In-Stock

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PC Components Company LLC

USA . 3,205 parts In-Stock

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Bristol Electronics

USA . 2,798 parts In-Stock

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Digiode

USA . 1,874 parts In-Stock

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Distributors (Availability)

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Native Components

USA . 296 parts In-Stock

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$0.151

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$0.145

296

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Northwest PG Solutions

USA . 2,285 parts In-Stock

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$0.166

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$0.146

2,285

$0.166

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Parana Technologies

USA . 1,621 parts In-Stock

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$8.880

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$9.562

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1,621

$8.880

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$9.562

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DigiPath Technology Company

USA . 770 parts In-Stock

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$9.778

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$8.996

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770

$9.778

$8.996

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ChromeModa Solutions

Germany . 5,818 parts In-Stock

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$9.978

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$8.182

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$9.978

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IDEA Electronic Components Group

UK . 35 parts In-Stock

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$9.978

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$9.479

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$8.980

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35

$9.978

$9.479

$8.980

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AZTECH Wire

Italy . 227 parts In-Stock

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$11.263

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One Stop Electronics

USA . 1,568 parts In-Stock

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$418.000

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Corphita

USA . 2,328 parts In-Stock

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Overview

Elevate your cellphone experience with the CC1260RGZR by Texas Instruments! This cutting-edge IC offers unmatched quality and reliability, thanks to its renowned manufacturer. Perfect for a wide range of applications in the telecommunications industry, this product provides exceptional value, benefits, and advantages to customers. Say goodbye to technical glitches and hello to seamless performance with the CC1260RGZR - your ultimate solution for superior connectivity and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material makes the package lightweight and durable, ensuring longevity of the product.

Surface Mount: YES

Surface mount technology allows for easy installation and replacement, making it convenient for manufacturers and users.

Package Shape: SQUARE

Square package shape helps in efficient use of space and allows for easy integration into electronic devices.

No. of Terminals: 48

Having 48 terminals allows for a greater number of connection points, enabling more functionalities and features in the cellphone IC.

Maximum Operating Temperature: 105 °C

High maximum operating temperature ensures reliable performance even in harsh environmental conditions.

Nominal Supply Voltage: 3.3 V

Operating at a nominal supply voltage of 3.3V makes the product compatible with a wide range of devices and power sources.

Technical Specifications

Cellphone ICs CC1260RGZR attributes and parameters. Explore more Cellphone ICs devices from Texas Instruments

Specs

JESD-30 Code:

S-PQCC-N48

JESD-609 Code:

e4

Length:

7 mm

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

48

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC48,.27SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1 mm

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Telecom IC Type:

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD SILVER

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

7 mm

Trade Compliance

CC1260RGZR Telecommunications trade compliance attributes, and parameters.

ECCN

5A991.G

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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