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CC1150RSTR

Texas Instruments

CC1150RSTR by Texas Instruments

The Texas Instruments CC1150RSTR is a cellphone IC with 16 terminals in a square chip carrier package. It operates b/w -40 to 85°C, with a supply voltage of 1.8/3.6V and peak reflow temperature of 260°C. Ideal for RF and baseband circuits in industrial telecom applications due to its CMOS technology and compact size.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Vyrian

USA . 3,635 parts In-Stock

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Digiode

USA . 205 parts In-Stock

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205

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Bristol Electronics

USA . 78 parts In-Stock

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78

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Inventory MP

USA . 39 parts In-Stock

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Parana Technologies

USA . 848 parts In-Stock

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$14.657

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$15.094

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848

$14.657

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$15.094

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DigiPath Technology Company

USA . 1,985 parts In-Stock

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$16.139

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$14.848

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$16.139

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ChromeModa Solutions

Germany . 3,322 parts In-Stock

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$16.468

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$13.504

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$16.468

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IDEA Electronic Components Group

UK . 420 parts In-Stock

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$16.468

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$15.645

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$14.821

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420

$16.468

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$14.821

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AZTECH Wire

Italy . 769 parts In-Stock

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$17.713

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Native Components

USA . 446 parts In-Stock

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$23.590

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Northwest PG Solutions

USA . 1,397 parts In-Stock

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$25.949

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$23.354

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Component Stockers USA

USA . 390 parts In-Stock

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$99.990

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One Stop Electronics

USA . 603 parts In-Stock

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Kepictronics

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Perfect Parts

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Lixinc

USA . 16,786 parts In-Stock

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S.R.D Solutions

India . 10,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,315 parts In-Stock

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Corphita

USA . 4,457 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,543 parts In-Stock

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Overview

Elevate your cellphone performance with the CC1150RSTR from Texas Instruments. Designed with precision and quality in mind, this Surface Mount IC offers unparalleled reliability and efficiency. With its compact square package shape and advanced technology, this Telecom RF and Baseband Circuit IC is perfect for a wide range of applications. Experience seamless connectivity and enhanced functionality, all while enjoying the peace of mind that comes with a product crafted by a trusted industry leader like Texas Instruments. Upgrade your devices today and unlock a world of possibilities with the CC1150RSTR.

Feature Benefit Bullets

Surface Mount: YES

Surface mount technology allows for efficient and automated assembly processes, making the product suitable for high-volume production.

Package Shape: SQUARE

The square package shape provides a compact and easy-to-handle form factor for the cellphone IC, allowing for space-saving designs in mobile devices.

Power Supplies (V): 1.8/3.6

Supports a wide range of power supply voltages, making it versatile and compatible with different mobile phone models.

No. of Terminals: 16

With 16 terminals, this IC offers various connectivity options and functionality, enhancing its performance in cellphone applications.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature ensures reliable performance even under demanding conditions, making it suitable for mobile devices.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature allows the IC to function effectively in cold environments, increasing its usability range.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the IC energy-efficient and reliable in cellphone applications.

Technical Specifications

Cellphone ICs CC1150RSTR attributes and parameters. Explore more Cellphone ICs devices from Texas Instruments

Specs

JESD-30 Code:

S-XQCC-N16

JESD-609 Code:

e4

Length:

4 mm

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

16

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

LCC16,.16SQ,25

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.8/3.6

Qualification:

Not Qualified

Maximum Seated Height:

.95 mm

Sub-Category:

Other Telecom ICs

Nominal Supply Voltage:

3 V

Surface Mount:

YES

Technology:

CMOS

Telecom IC Type:

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

4 mm

Trade Compliance

CC1150RSTR Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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