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CC1131QRHBRG4Q1

Texas Instruments

CC1131QRHBRG4Q1 by Texas Instruments

CC1131QRHBRG4Q1 by Texas Instruments is a Cellphone IC with 32 terminals, operating at -40 to 125 °C. It features a supply voltage of 3V, data rate of 0.25 Mbps, and is suitable for RF and baseband circuits in automotive applications.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 5,749 parts In-Stock

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Digiode

USA . 3,597 parts In-Stock

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Native Components

USA . 82 parts In-Stock

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$1.590

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Northwest PG Solutions

USA . 476 parts In-Stock

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$1.749

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Corohmni

South Africa . 398 parts In-Stock

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$8.685

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Advanced Electronics

New Zealand . 3,000 parts In-Stock

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$9.467

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$8.615

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$7.763

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AZTECH Wire

Italy . 748 parts In-Stock

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$10.969

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Parana Technologies

USA . 559 parts In-Stock

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$11.371

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$11.796

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DigiPath Technology Company

USA . 11 parts In-Stock

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ChromeModa Solutions

Germany . 6,913 parts In-Stock

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$10.476

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IDEA Electronic Components Group

UK . 1,590 parts In-Stock

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$12.137

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$11.498

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One Stop Electronics

USA . 1,235 parts In-Stock

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GreenTree Electronics

Israel . 10,000 parts In-Stock

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A-Z Elektronik GmbH

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Kepictronics

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Alle Elektronik GmbH

Germany . 4,247 parts In-Stock

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Lixinc

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Corphita

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Overview

Elevate your cellphone performance with the CC1131QRHBRG4Q1 by Texas Instruments, a top-of-the-line IC that guarantees quality and reliability. Manufactured with precision and expertise, this product offers unparalleled value and benefits to customers seeking superior connectivity solutions. Perfect for automotive applications, this RF and baseband circuit boasts a wide operating temperature range and a compact, square package design for seamless integration. Trust Texas Instruments to deliver cutting-edge technology that enhances your mobile experience.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used in the package body provides durability and protection to the internal components of the cellphone IC, ensuring longevity and reliability.

Surface Mount: YES

Being surface mountable allows for ease of assembly and potentially smaller form factor of the device, making it suitable for compact and slim cellphone designs.

Screening Level: AEC-Q100

Compliance with AEC-Q100 ensures that the cellphone IC meets automotive industry standards for reliability and performance, making it ideal for applications in automotive environments.

Power Supplies (V): 1.8/3.6

The range of power supply options allows for flexibility in powering the cellphone IC, making it compatible with a variety of power sources.

No. of Terminals: 32

With 32 terminals, this cellphone IC offers a sufficient number of connection points for input/output to support various functions and features in a mobile device.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature ensures reliable performance even in harsh environmental conditions, making it suitable for use in automotive and industrial applications.

Terminal Finish: NICKEL PALLADIUM GOLD

The use of nickel palladium gold terminal finish provides excellent conductivity and corrosion resistance, contributing to the overall reliability and longevity of the cellphone IC.

Telecom IC Type: RF AND BASEBAND CIRCUIT

Having both RF and baseband circuit functionality in one IC simplifies the design and integration process, making it a cost-effective and efficient solution for mobile communication devices.

Technical Specifications

Cellphone ICs CC1131QRHBRG4Q1 attributes and parameters. Explore more Cellphone ICs devices from Texas Instruments

Specs

Data Rate:

.25 Mbps

JESD-30 Code:

S-PQCC-N32

JESD-609 Code:

e4

Length:

5 mm

Moisture Sensitivity Level (MSL):

2

No. of Functions:

1

No. of Terminals:

32

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC32,.2SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.8/3.6

Qualification:

Not Qualified

Screening Level:

AEC-Q100

Maximum Seated Height:

1 mm

Sub-Category:

Other Telecom ICs

Nominal Supply Voltage:

3 V

Surface Mount:

YES

Telecom IC Type:

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

5 mm

Trade Compliance

CC1131QRHBRG4Q1 Telecommunications trade compliance attributes, and parameters.

ECCN

5A991.G

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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