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TLV320AC57CN

Texas Instruments

TLV320AC57CN by Texas Instruments

TLV320AC57CN by Texas Instruments is a 20-terminal IC with 3V supply, operating b/w 0-70°C. It features A-LAW companding law, 13-bit linear coding, and a filter. Ideal for cellphone applications due to its BASEBAND CIRCUIT telecom IC type and compact IN-LINE package style.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,230 parts In-Stock

1+ parts

-

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1k+ parts

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4,230

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Digiode

USA . 4,113 parts In-Stock

1+ parts

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4,113

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,020 parts In-Stock

1+ parts

$12.698

100+ parts

-

1k+ parts

$13.164

10k+ parts

-

1,020

$12.698

-

$13.164

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DigiPath Technology Company

USA . 441 parts In-Stock

1+ parts

$13.982

100+ parts

$12.863

1k+ parts

-

10k+ parts

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441

$13.982

$12.863

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ChromeModa Solutions

Germany . 6,369 parts In-Stock

1+ parts

$14.267

100+ parts

$11.699

1k+ parts

-

10k+ parts

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6,369

$14.267

$11.699

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IDEA Electronic Components Group

UK . 842 parts In-Stock

1+ parts

$14.267

100+ parts

$13.554

1k+ parts

$12.840

10k+ parts

-

842

$14.267

$13.554

$12.840

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AZTECH Wire

Italy . 381 parts In-Stock

1+ parts

$18.318

100+ parts

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10k+ parts

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381

$18.318

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One Stop Electronics

USA . 1,211 parts In-Stock

1+ parts

$991.000

100+ parts

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1,211

$991.000

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Corphita

USA . 312 parts In-Stock

1+ parts

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312

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Overview

Enhance the performance of your cellphone with the TLV320AC57CN by Texas Instruments. Known for their high-quality products, this Cellphone IC offers superior functionality and reliability. Whether you're looking to improve audio quality or enhance signal processing, this versatile IC has you covered. With a compact design and advanced technology, the TLV320AC57CN is the perfect solution for all your cellphone needs. Upgrade your device today and experience the difference with Texas Instruments.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material is lightweight and durable, making the product easy to handle and resistant to damage.

Power Supplies (V): 3

Operates at a standard voltage, ensuring compatibility with most power sources.

No. of Terminals: 20

Sufficient number of terminals for connectivity and functionality requirements.

Maximum Operating Temperature: 70 °C

Can withstand high temperatures without compromising performance.

Minimum Operating Temperature: 0 °C

Capable of functioning in a wide range of temperatures, suitable for varying environments.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, improving efficiency.

Telecom IC Type: BASEBAND CIRCUIT

Designed specifically for telecom applications, ensuring optimized performance in communication systems.

Technical Specifications

Cellphone ICs TLV320AC57CN attributes and parameters. Explore more Cellphone ICs devices from Texas Instruments

Specs

Companding Law:

A-LAW

Filter:

YES

Maximum Gain Tolerance:

1 dB

JESD-30 Code:

R-PDIP-T20

Length:

24.325 mm

Linear Coding:

13-BIT

No. of Functions:

1

No. of Terminals:

20

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP20,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3

Qualification:

Not Qualified

Maximum Seated Height:

5.08 mm

Sub-Category:

Codecs

Maximum Supply Current:

.0075 mA

Nominal Supply Voltage:

3 V

Surface Mount:

NO

Technology:

CMOS

Telecom IC Type:

Temperature Grade:

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

7.62 mm

Trade Compliance

TLV320AC57CN Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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