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TLV320AC57CDW

Texas Instruments

TLV320AC57CDW by Texas Instruments

TLV320AC57CDW by Texas Instruments is a 20-terminal cellphone IC with 3V supply voltage. It features A-LAW companding law, 13-bit linear coding, and a filter. Ideal for baseband circuits in telecom applications due to its small outline package and commercial temperature grade.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,351 parts In-Stock

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8,351

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Digiode

USA . 4,319 parts In-Stock

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4,319

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 183 parts In-Stock

1+ parts

$14.238

100+ parts

-

1k+ parts

$14.690

10k+ parts

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183

$14.238

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$14.690

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DigiPath Technology Company

USA . 494 parts In-Stock

1+ parts

$15.678

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-

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494

$15.678

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IDEA Electronic Components Group

UK . 1,503 parts In-Stock

1+ parts

$15.998

100+ parts

$15.198

1k+ parts

$14.398

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-

1,503

$15.998

$15.198

$14.398

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ChromeModa Solutions

Germany . 1,342 parts In-Stock

1+ parts

$15.998

100+ parts

$13.118

1k+ parts

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1,342

$15.998

$13.118

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AZTECH Wire

Italy . 297 parts In-Stock

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$17.582

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297

$17.582

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One Stop Electronics

USA . 329 parts In-Stock

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$905.000

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329

$905.000

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Corphita

USA . 4,422 parts In-Stock

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Overview

Elevate your cellphone audio experience with the Texas Instruments TLV320AC57CDW. Crafted with precision and expertise, this high-quality Cellphone IC offers unparalleled performance and reliability. Designed to enhance sound quality and optimize power efficiency, this IC is perfect for a wide range of applications in the telecommunications industry. Trust in Texas Instruments' legacy of excellence and innovation, and elevate your devices with the TLV320AC57CDW. Unlock the potential of your technology with this exceptional product.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material can provide durability and protection to the internal components of the cellphone ICs, making it a reliable choice.

Surface Mount: YES

Surface mount technology allows for easy and efficient assembly onto circuit boards, making the installation process smooth and time-saving.

Power Supplies (V): 3

Operating at a voltage of 3V is efficient and suitable for most cellphone applications, ensuring compatibility and optimal performance.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and allows for compact design of cellphones, which is essential for modern sleek and slim designs.

Maximum Operating Temperature: 70 °C

With a high maximum operating temperature of 70°C, the cellphone ICs can withstand elevated temperatures without compromising performance or reliability.

Technology: CMOS

CMOS technology offers low power consumption, high speed, and compatibility with various devices, making the cellphone ICs energy-efficient and versatile.

Technical Specifications

Cellphone ICs TLV320AC57CDW attributes and parameters. Explore more Cellphone ICs devices from Texas Instruments

Specs

Companding Law:

A-LAW

Filter:

YES

Maximum Gain Tolerance:

1 dB

JESD-30 Code:

R-PDSO-G20

Length:

12.8 mm

Linear Coding:

13-BIT

No. of Functions:

1

No. of Terminals:

20

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP20,.4

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3

Qualification:

Not Qualified

Maximum Seated Height:

2.65 mm

Sub-Category:

Codecs

Maximum Supply Current:

.0075 mA

Nominal Supply Voltage:

3 V

Surface Mount:

YES

Technology:

CMOS

Telecom IC Type:

Temperature Grade:

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

7.5 mm

Trade Compliance

TLV320AC57CDW Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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