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CC1000YZR

Texas Instruments

CC1000YZR by Texas Instruments

CC1000YZR by Texas Instruments is a Cellphone IC with 28 terminals in a rectangular package. It operates at temperatures ranging from -40 to 85°C, suitable for industrial use. This RF and baseband circuit has a nominal voltage of 3V, making it ideal for telecom applications.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Vyrian

USA . 6,995 parts In-Stock

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Digiode

USA . 2,918 parts In-Stock

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Florida Circuit

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Parana Technologies

USA . 5 parts In-Stock

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$12.271

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$12.696

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DigiPath Technology Company

USA . 770 parts In-Stock

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$13.512

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$12.431

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ChromeModa Solutions

Germany . 2,806 parts In-Stock

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IDEA Electronic Components Group

UK . 1,991 parts In-Stock

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$13.099

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$12.409

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AZTECH Wire

Italy . 317 parts In-Stock

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Component Stockers USA

USA . 663 parts In-Stock

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$99.990

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One Stop Electronics

USA . 279 parts In-Stock

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Corphita

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Native Components

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Northwest PG Solutions

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Overview

Discover the cutting-edge CC1000YZR by Texas Instruments, a high-quality Cellphone IC that offers unmatched performance and reliability. Manufactured by the industry leader Texas Instruments, this innovative product boasts a compact design and advanced technology, making it ideal for a wide range of applications. From enhancing communication capabilities to improving overall device efficiency, the CC1000YZR delivers exceptional value and benefits to customers. Upgrade your electronic devices with the CC1000YZR and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic material offers durability and is lightweight, making it ideal for portable electronic devices like cellphones.

Surface Mount: YES

Surface mount technology enables easy installation onto circuit boards, saving space and allowing for automated assembly processes.

Package Shape: RECTANGULAR

Rectangular shape provides a compact design that fits well within the constraints of cellphone circuit layouts.

Power Supplies (V): 2.5/3.3

Compatible with common voltage requirements in cellphone applications, offering flexibility in power management.

No. of Terminals: 28

Sufficient number of terminals for connecting various components within the cellphone IC, facilitating seamless operation.

Package Style (Meter): GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Grid array package style with thin profile and fine pitch enhances signal integrity and reduces overall footprint for compact cellphone designs.

Maximum Operating Temperature: 85 °C

High maximum operating temperature ensures reliable performance even under demanding conditions.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature allows the IC to function effectively in a wide range of environmental settings.

Terminal Position: BOTTOM

Bottom terminal position eases routing of connections and enhances thermal management within the cellphone IC.

Maximum Seated Height: 0.652 mm

Low seated height enables slim profile designs for cellphones without sacrificing performance or functionality.

Width: 2.339 mm

Narrow width enhances space efficiency and compatibility with standard circuit board layouts in cellphone applications.

Length: 4.034 mm

Moderate length provides a balanced form factor for cellphone ICs, accommodating necessary components and connections.

Temperature Grade: INDUSTRIAL

Industrial temperature grade ensures stable operation across varying temperature conditions encountered in real-world use cases.

Technology: CMOS

CMOS technology offers low power consumption and high speed operation, making it well-suited for energy-efficient cellphone designs.

Terminal Form: BALL

Ball terminal form provides reliable connections and facilitates soldering processes during cellphone IC assembly.

Telecom IC Type: RF AND BASEBAND CIRCUIT

Combination of RF and baseband circuitry supports wireless communication capabilities in cellphones, ensuring seamless connectivity.

Nominal Supply Voltage: 3 V

Standard nominal supply voltage of 3V is compatible with various cellphone components, simplifying power management.

Terminal Pitch: 0.5 mm

Fine terminal pitch allows for high-density integration, enabling complex circuitry within the limited space of cellphones.

Technical Specifications

Cellphone ICs CC1000YZR attributes and parameters. Explore more Cellphone ICs devices from Texas Instruments

Specs

JESD-30 Code:

R-PBGA-B28

Length:

4.034 mm

No. of Functions:

1

No. of Terminals:

28

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA28,4X7,20

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Power Supplies (V):

2.5/3.3

Qualification:

Not Qualified

Maximum Seated Height:

.652 mm

Sub-Category:

Other Telecom ICs

Nominal Supply Voltage:

3 V

Surface Mount:

YES

Technology:

CMOS

Telecom IC Type:

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Width:

2.339 mm

Trade Compliance

CC1000YZR Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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