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CC1020RSSG4

Texas Instruments

CC1020RSSG4 by Texas Instruments

CC1020RSSG4 by Texas Instruments is a cellphone IC with 32 terminals in a square package. It operates b/w -40 to 85°C, suitable for industrial use. This RF and baseband circuit has a nominal voltage of 3V, making it ideal for telecom applications.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 5,528 parts In-Stock

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Digiode

USA . 2,937 parts In-Stock

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2,937

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Distributors (Availability)

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Northwest PG Solutions

USA . 508 parts In-Stock

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$3.269

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508

$3.269

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AZTECH Wire

Italy . 286 parts In-Stock

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$12.112

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Parana Technologies

USA . 1,840 parts In-Stock

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$15.821

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$16.179

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$15.821

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$16.179

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DigiPath Technology Company

USA . 1,480 parts In-Stock

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$17.420

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$17.420

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ChromeModa Solutions

Germany . 5,629 parts In-Stock

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$17.776

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$14.576

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5,629

$17.776

$14.576

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IDEA Electronic Components Group

UK . 81 parts In-Stock

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$17.776

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$16.887

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$15.998

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81

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One Stop Electronics

USA . 130 parts In-Stock

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$663.000

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Corphita

USA . 3,131 parts In-Stock

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Native Components

USA . 439 parts In-Stock

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$2.882

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Overview

Unleash the power of connectivity with the Texas Instruments CC1020RSSG4, a top-notch cellphone IC that delivers superior performance and reliability. Manufactured by industry giant Texas Instruments, this cutting-edge product is designed to meet the demands of modern communication technology. Whether you're looking to enhance your smartphone's capabilities or improve data transmission efficiency, the CC1020RSSG4 is your go-to solution. With its advanced features and high-quality construction, this cellphone IC offers unmatched value and benefits to customers seeking seamless connectivity in a compact package. Experience the difference with Texas Instruments today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package lightweight and durable, perfect for portable electronic devices like cellphones.

Surface Mount: YES

The surface mount capability allows for easier and more efficient assembly in the manufacturing process, saving both time and cost.

Package Shape: SQUARE

The square shape of the package helps in efficient space utilization on the PCB, making it a compact and space-saving choice.

Power Supplies (V): 3

Operating at a power supply voltage of 3V makes it compatible with most cellphone systems, ensuring seamless integration and performance.

No. of Terminals: 32

Having 32 terminals allows for a wide range of connections and functionalities, making the IC versatile and suitable for various applications.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85°C, the IC can withstand heat without compromising performance, ensuring reliability in different environments.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40°C means the IC can operate in extremely cold conditions, making it suitable for use in diverse climates.

Terminal Position: QUAD

The quad terminal position allows for efficient routing of signals and connections, enhancing the overall performance of the IC in cellphone systems.

Package Style (Meter): CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

The combination of chip carrier, heat sink/slug, and very thin profile package styles provides optimal thermal management and space-saving design for enhanced cellphone functionality.

Maximum Seated Height: 1 mm

The low maximum seated height of 1mm ensures a compact form factor, making it suitable for slim and sleek cellphone designs.

Width: 7 mm

The 7mm width offers compatibility with standard PCB layouts and allows for easy integration into cellphone circuitry.

Length: 7 mm

The 7mm length further contributes to the compact size of the IC, making it ideal for space-constrained cellphone applications.

Temperature Grade: INDUSTRIAL

Having an industrial temperature grade ensures reliable performance in harsh operating environments, making it a resilient choice for cellphone ICs.

Terminal Form: NO LEAD

The no-lead terminal form enhances the reliability of connections and reduces the risk of solder-related issues, ensuring long-term functionality in cellphone applications.

Telecom IC Type: RF AND BASEBAND CIRCUIT

The inclusion of RF and baseband circuit types enables seamless communication and processing capabilities in cellphone systems, supporting multifunctionality and connectivity.

Nominal Supply Voltage: 3 V

Having a nominal supply voltage of 3V ensures compatibility with standard cellphone power requirements, optimizing performance and efficiency.

Terminal Pitch: 0.65 mm

The 0.65mm terminal pitch allows for close interconnection of terminals, enabling high-density packaging and efficient signal transfer in cellphone IC applications.

Technical Specifications

Cellphone ICs CC1020RSSG4 attributes and parameters. Explore more Cellphone ICs devices from Texas Instruments

Specs

JESD-30 Code:

S-PQCC-N32

Length:

7 mm

No. of Functions:

1

No. of Terminals:

32

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC32,.27SQ,25

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Sub-Category:

Other Telecom ICs

Nominal Supply Voltage:

3 V

Surface Mount:

YES

Telecom IC Type:

Temperature Grade:

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

7 mm

Trade Compliance

CC1020RSSG4 Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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