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LMV228SD/NOPB

Texas Instruments

LMV228SD/NOPB by Texas Instruments

LMV228SD/NOPB by Texas Instruments is a cellphone IC with small outline, heat sink, and very thin profile. It operates at 260°C peak reflow temperature, consuming 8mA max supply current. Ideal for RF and baseband circuits in telecom applications due to its dual terminal position and matte tin finish.

Median Price

$1.142

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 41,284 parts In-Stock

1+ parts

$1.142

100+ parts

$0.944

1k+ parts

$0.510

10k+ parts

-

41,284

$1.142

$0.944

$0.510

-

DigiKey

USA . 1,311 parts In-Stock

1+ parts

$1.640

100+ parts

$0.970

1k+ parts

$0.849

10k+ parts

$0.786

1,311

$1.640

$0.970

$0.849

$0.786

Mouser Electronics

USA . 731 parts In-Stock

1+ parts

$1.640

100+ parts

$0.970

1k+ parts

$0.848

10k+ parts

$0.800

731

$1.640

$0.970

$0.848

$0.800

Rochester

USA . 2,505 parts In-Stock

1+ parts

-

100+ parts

$0.997

1k+ parts

$0.827

10k+ parts

$0.738

2,505

-

$0.997

$0.827

$0.738

Verical

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.034

10k+ parts

$0.922

2,500

-

-

$1.034

$0.922

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,130 parts In-Stock

1+ parts

$0.673

100+ parts

-

1k+ parts

-

10k+ parts

-

4,130

$0.673

-

-

-

Vyrian

USA . 4,159 parts In-Stock

1+ parts

$0.708

100+ parts

-

1k+ parts

-

10k+ parts

-

4,159

$0.708

-

-

-

Anansix

USA . 278 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

278

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,618 parts In-Stock

1+ parts

$0.637

100+ parts

-

1k+ parts

-

10k+ parts

-

2,618

$0.637

-

-

-

Parana Technologies

USA . 1,640 parts In-Stock

1+ parts

$15.166

100+ parts

$1,408.356

1k+ parts

$13.649

10k+ parts

-

1,640

$15.166

$1,408.356

$13.649

-

DigiPath Technology Company

USA . 2,274 parts In-Stock

1+ parts

$16.699

100+ parts

-

1k+ parts

-

10k+ parts

-

2,274

$16.699

-

-

-

ChromeModa Solutions

Germany . 5,352 parts In-Stock

1+ parts

$17.040

100+ parts

$13.973

1k+ parts

-

10k+ parts

-

5,352

$17.040

$13.973

-

-

IDEA Electronic Components Group

UK . 2,256 parts In-Stock

1+ parts

$17.040

100+ parts

$16.188

1k+ parts

$15.336

10k+ parts

-

2,256

$17.040

$16.188

$15.336

-

Perfect Parts

USA . 8,905 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,905

-

-

-

-

Overview

Enhance the performance of your cellphone with the LMV228SD/NOPB by Texas Instruments. Known for their top-notch quality and reliability, Texas Instruments delivers cutting-edge Cellphone ICs that are perfect for a wide range of applications. With a focus on value and innovation, this product offers customers unparalleled benefits and advantages. Upgrade your device today with the LMV228SD/NOPB and experience improved functionality like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes the product lightweight and durable, ensuring long-term reliability.

Surface Mount: YES

Surface mount technology allows for easier and cost-effective assembly of the ICs onto circuit boards, saving space and improving overall functionality.

Package Shape: RECTANGULAR

The rectangular package shape is commonly used and easy to work with, making it compatible with various electronic devices and circuit designs.

Package Style (Meter): SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

The small outline, heat sink/slug, and very thin profile of the package style help in efficient heat dissipation and compact design, ideal for mobile devices.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides excellent solderability and conductivity, ensuring a reliable electrical connection for optimal performance.

Terminal Position: DUAL

The dual terminal position allows for versatile mounting options and improved signal integrity, enhancing the overall functionality of the IC.

Maximum Time At Peak Reflow Temperature (s): 30

The short maximum time at peak reflow temperature of 30 seconds helps prevent damage or degradation to the IC during the soldering process, ensuring product quality.

Peak Reflow Temperature °C: 260

The high peak reflow temperature of 260°C enables robust soldering connections and reliable performance in various operating conditions.

Terminal Form: NO LEAD

The no-lead terminal form reduces the risk of lead-related health hazards, making the product environmentally friendly and compliant with regulatory standards.

Maximum Supply Current: 8 mA

The low maximum supply current of 8 mA helps in reducing power consumption and extending battery life in mobile devices, enhancing overall efficiency.

Telecom IC Type: RF AND BASEBAND CIRCUIT

The RF and baseband circuit integration in the telecom IC type ensures seamless communication and data processing capabilities, making it an excellent choice for cellphone applications.

Technical Specifications

Cellphone ICs LMV228SD/NOPB attributes and parameters. Explore more Cellphone ICs devices from Texas Instruments

Specs

JESD-30 Code:

R-PDSO-N6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Maximum Supply Current:

8 mA

Surface Mount:

YES

Telecom IC Type:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

LMV228SD/NOPB Telecommunications trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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