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CC1111F8RSPG3

Texas Instruments

CC1111F8RSPG3 by Texas Instruments

The Texas Instruments CC1111F8RSPG3 is a cellphone IC with 36 terminals in a square chip carrier package. Operating at 3V, it features RF and baseband circuit technology, suitable for telecom applications. With a temperature range of 0-85°C, this CMOS device has a terminal pitch of 0.5mm and is surface mountable.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,239 parts In-Stock

1+ parts

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6,239

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Digiode

USA . 1,464 parts In-Stock

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1,464

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 107 parts In-Stock

1+ parts

$0.246

100+ parts

-

1k+ parts

-

10k+ parts

$0.236

107

$0.246

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-

$0.236

Northwest PG Solutions

USA . 1,815 parts In-Stock

1+ parts

$0.271

100+ parts

-

1k+ parts

-

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$0.239

1,815

$0.271

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$0.239

Parana Technologies

USA . 1,569 parts In-Stock

1+ parts

$10.094

100+ parts

-

1k+ parts

$10.643

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1,569

$10.094

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$10.643

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IDEA Electronic Components Group

UK . 1,727 parts In-Stock

1+ parts

$11.342

100+ parts

$10.775

1k+ parts

$10.208

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-

1,727

$11.342

$10.775

$10.208

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ChromeModa Solutions

Germany . 933 parts In-Stock

1+ parts

$11.342

100+ parts

$9.300

1k+ parts

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933

$11.342

$9.300

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AZTECH Wire

Italy . 727 parts In-Stock

1+ parts

$19.122

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727

$19.122

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Semicontronic

India . 1,366 parts In-Stock

1+ parts

$511.000

100+ parts

$498.225

1k+ parts

$495.670

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1,366

$511.000

$498.225

$495.670

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Ampacity Inc.

Singapore . 956 parts In-Stock

1+ parts

$605.000

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956

$605.000

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One Stop Electronics

USA . 953 parts In-Stock

1+ parts

$704.000

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953

$704.000

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Corphita

USA . 4,146 parts In-Stock

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4,146

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DigiPath Technology Company

USA . 2,001 parts In-Stock

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$10.226

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2,001

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$10.226

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Corohmni

South Africa . 397 parts In-Stock

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397

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Overview

Elevate your cellphone experience with the CC1111F8RSPG3 by Texas Instruments. This top-quality RF and baseband circuit IC offers unparalleled performance and reliability, thanks to the renowned manufacturer's commitment to excellence. Whether you're looking for seamless connectivity, enhanced signal processing, or improved power efficiency, this cutting-edge technology delivers it all. Upgrade your device today and unlock a world of possibilities with the CC1111F8RSPG3.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the product lightweight and durable, ideal for mobile devices.

Surface Mount: YES

Being surface mountable makes the product easier to assemble on the printed circuit board, saving space and facilitating automated manufacturing processes.

Power Supplies (V): 3

The 3V power supply requirement is commonly used in mobile devices, ensuring compatibility and efficient power consumption.

Package Style (Meter): CHIP CARRIER

The chip carrier package style offers compact size, good heat dissipation, and ease of handling during assembly and testing.

Technology: CMOS

CMOS technology offers low power consumption, high noise immunity, and compatibility with various digital systems, making the product energy-efficient.

Telecom IC Type: RF AND BASEBAND CIRCUIT

With RF and baseband circuit integration, the product can handle both wireless communication and digital signal processing efficiently, ideal for cellphone applications.

Technical Specifications

Cellphone ICs CC1111F8RSPG3 attributes and parameters. Explore more Cellphone ICs devices from Texas Instruments

Specs

JESD-30 Code:

S-PQCC-N36

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

3

No. of Terminals:

36

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC36,.25SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Power Supplies (V):

3

Qualification:

Not Qualified

Sub-Category:

Other Telecom ICs

Nominal Supply Voltage:

3 V

Surface Mount:

YES

Technology:

CMOS

Telecom IC Type:

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

CC1111F8RSPG3 Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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