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CC1131IRHBRG4Q1

Texas Instruments

CC1131IRHBRG4Q1 by Texas Instruments

CC1131IRHBRG4Q1 by Texas Instruments is a cellphone IC with 32 terminals, operating at -40 to 85°C. It features RF and baseband circuits, operates at 3V, and has a data rate of 0.25 Mbps. This chip carrier package is suitable for industrial applications requiring high-speed communication in compact devices.

Median Price

$2.810

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 73 parts In-Stock

1+ parts

-

100+ parts

$2.810

1k+ parts

$2.520

10k+ parts

$2.370

73

-

$2.810

$2.520

$2.370

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,917 parts In-Stock

1+ parts

$2.974

100+ parts

-

1k+ parts

-

10k+ parts

-

4,917

$2.974

-

-

-

Vyrian

USA . 8,008 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,008

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 292 parts In-Stock

1+ parts

$0.090

100+ parts

-

1k+ parts

-

10k+ parts

$0.086

292

$0.090

-

-

$0.086

Northwest PG Solutions

USA . 696 parts In-Stock

1+ parts

$0.099

100+ parts

-

1k+ parts

-

10k+ parts

$0.087

696

$0.099

-

-

$0.087

Corphita

USA . 508 parts In-Stock

1+ parts

$2.817

100+ parts

-

1k+ parts

-

10k+ parts

-

508

$2.817

-

-

-

Advanced Electronics

New Zealand . 75 parts In-Stock

1+ parts

$7.243

100+ parts

$6.591

1k+ parts

$5.939

10k+ parts

-

75

$7.243

$6.591

$5.939

-

Corohmni

South Africa . 20 parts In-Stock

1+ parts

$11.930

100+ parts

-

1k+ parts

-

10k+ parts

-

20

$11.930

-

-

-

Parana Technologies

USA . 2,011 parts In-Stock

1+ parts

$11.938

100+ parts

-

1k+ parts

$12.343

10k+ parts

-

2,011

$11.938

-

$12.343

-

DigiPath Technology Company

USA . 95 parts In-Stock

1+ parts

$13.145

100+ parts

$12.093

1k+ parts

-

10k+ parts

-

95

$13.145

$12.093

-

-

IDEA Electronic Components Group

UK . 1,348 parts In-Stock

1+ parts

$13.413

100+ parts

$12.742

1k+ parts

$12.072

10k+ parts

-

1,348

$13.413

$12.742

$12.072

-

ChromeModa Solutions

Germany . 1,101 parts In-Stock

1+ parts

$13.413

100+ parts

$10.999

1k+ parts

-

10k+ parts

-

1,101

$13.413

$10.999

-

-

AZTECH Wire

Italy . 993 parts In-Stock

1+ parts

$20.180

100+ parts

-

1k+ parts

-

10k+ parts

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993

$20.180

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Perfect Parts

USA . 4,227 parts In-Stock

1+ parts

-

100+ parts

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4,227

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Overview

Enhance the performance of your cellphone with the CC1131IRHBRG4Q1 by Texas Instruments. Manufactured with top-notch quality and reliability, this advanced RF and baseband circuit IC offers seamless integration for optimal communication capabilities. With a wide range of industrial applications, this chip carrier package ensures efficient power supplies, high data rates, and superior temperature tolerance. Experience the benefits of cutting-edge technology with this innovative solution, designed to elevate your mobile device experience. Choose Texas Instruments for unparalleled value and performance in cellphone ICs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and resistance to impact, making the product sturdy and long-lasting.

Surface Mount: YES

Easy to install and replace, suitable for modern electronic devices with compact designs.

Screening Level: AEC-Q100

Meets automotive industry standards for reliability and quality, ensuring high performance in challenging environments.

Power Supplies (V): 1.8/3.6

Offers flexibility in power options, making it compatible with a variety of devices and applications.

No. of Terminals: 32

Sufficient terminals for connecting various components, enabling versatile functionality.

Maximum Operating Temperature: 85 °C

Can withstand high temperatures, ensuring consistent performance even in demanding conditions.

Minimum Operating Temperature: -40 °C

Operational in extreme cold environments, suitable for a wide range of applications.

Peak Reflow Temperature °C: 260

Capable of withstanding high reflow temperatures during assembly, ensuring reliable soldering.

Temperature Grade: INDUSTRIAL

Designed for industrial applications, providing robust performance in harsh industrial settings.

Data Rate: 0.25 Mbps

Efficient data transfer rate, suitable for communication systems requiring high-speed data processing.

Technical Specifications

Cellphone ICs CC1131IRHBRG4Q1 attributes and parameters. Explore more Cellphone ICs devices from Texas Instruments

Specs

Data Rate:

.25 Mbps

JESD-30 Code:

S-PQCC-N32

JESD-609 Code:

e4

Length:

5 mm

Moisture Sensitivity Level (MSL):

2

No. of Functions:

1

No. of Terminals:

32

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC32,.2SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.8/3.6

Qualification:

Not Qualified

Screening Level:

AEC-Q100

Maximum Seated Height:

1 mm

Sub-Category:

Other Telecom ICs

Nominal Supply Voltage:

3 V

Surface Mount:

YES

Telecom IC Type:

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

5 mm

Trade Compliance

CC1131IRHBRG4Q1 Telecommunications trade compliance attributes, and parameters.

ECCN

5A991.G

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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