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LMV227SDX/NOPB

Texas Instruments

LMV227SDX/NOPB by Texas Instruments

LMV227SDX/NOPB by Texas Instruments is a cellphone IC with 6 terminals, operating temperature range of -40 to 85°C, and supply voltage of 2.7V. It is used in RF and baseband circuits for telecom applications due to its small outline package style and surface mount capability.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,485 parts In-Stock

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Digiode

USA . 4,054 parts In-Stock

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4,054

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Anansix

USA . 219 parts In-Stock

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219

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 302 parts In-Stock

1+ parts

$9.891

100+ parts

-

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$10.460

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302

$9.891

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$10.460

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DigiPath Technology Company

USA . 1,375 parts In-Stock

1+ parts

$10.891

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1,375

$10.891

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IDEA Electronic Components Group

UK . 1,603 parts In-Stock

1+ parts

$11.113

100+ parts

$10.557

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$10.002

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-

1,603

$11.113

$10.557

$10.002

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ChromeModa Solutions

Germany . 1,156 parts In-Stock

1+ parts

$11.113

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$9.113

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1,156

$11.113

$9.113

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AZTECH Wire

Italy . 886 parts In-Stock

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$16.043

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886

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One Stop Electronics

USA . 1,169 parts In-Stock

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$818.000

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$818.000

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Corphita

USA . 1,385 parts In-Stock

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1,385

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Overview

Enhance your cellphone's performance with the LMV227SDX/NOPB by Texas Instruments. Known for their superior quality and reliability, Texas Instruments has once again delivered a top-notch product in the realm of Cellphone ICs. This small outline, heat sink package offers users seamless integration and high efficiency, perfect for RF and baseband circuits. With a wide temperature range and dual terminal position, this industrial-grade IC ensures optimal performance in any environment. Upgrade your device today and experience the unmatched value and benefits that only Texas Instruments can provide.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body material provides durability and protection for the IC, making it suitable for various environments.

Surface Mount: YES

The surface mount capability allows for easy and efficient installation on circuit boards, saving time and effort during assembly.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this IC can handle higher temperatures without compromising performance, ensuring reliability in demanding conditions.

Nominal Supply Voltage: 2.7 V

The 2.7 V nominal supply voltage is suitable for power-efficient operation and compatibility with a wide range of power sources.

Terminal Pitch: 0.65 mm

The small terminal pitch of 0.65 mm allows for compact and space-saving circuit designs, ideal for applications where board space is limited.

Technical Specifications

Cellphone ICs LMV227SDX/NOPB attributes and parameters. Explore more Cellphone ICs devices from Texas Instruments

Specs

JESD-30 Code:

R-PDSO-N6

JESD-609 Code:

e3

Length:

2.5 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

6

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Maximum Seated Height:

.8 mm

Nominal Supply Voltage:

2.7 V

Surface Mount:

YES

Telecom IC Type:

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

2.2 mm

Trade Compliance

LMV227SDX/NOPB Telecommunications trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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