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CC1070RGWR

Texas Instruments

CC1070RGWR by Texas Instruments

The Texas Instruments CC1070RGWR is a cellphone IC with 20 terminals in a square chip carrier package. It operates at temperatures ranging from -40 to 105°C and has a supply voltage of 3V. This RF and baseband circuit uses CMOS technology, making it suitable for industrial telecom applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,356 parts In-Stock

1+ parts

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5,356

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Digiode

USA . 2,335 parts In-Stock

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2,335

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 356 parts In-Stock

1+ parts

$0.156

100+ parts

-

1k+ parts

-

10k+ parts

$0.150

356

$0.156

-

-

$0.150

Northwest PG Solutions

USA . 1,917 parts In-Stock

1+ parts

$0.172

100+ parts

-

1k+ parts

-

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$0.151

1,917

$0.172

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$0.151

Parana Technologies

USA . 526 parts In-Stock

1+ parts

$5.603

100+ parts

-

1k+ parts

$6.398

10k+ parts

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526

$5.603

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$6.398

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DigiPath Technology Company

USA . 1,146 parts In-Stock

1+ parts

$6.170

100+ parts

$5.676

1k+ parts

-

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1,146

$6.170

$5.676

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ChromeModa Solutions

Germany . 2,879 parts In-Stock

1+ parts

$6.296

100+ parts

$5.163

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2,879

$6.296

$5.163

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IDEA Electronic Components Group

UK . 1,131 parts In-Stock

1+ parts

$6.296

100+ parts

-

1k+ parts

$5.666

10k+ parts

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1,131

$6.296

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$5.666

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AZTECH Wire

Italy . 573 parts In-Stock

1+ parts

$10.332

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573

$10.332

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Component Stockers USA

USA . 715 parts In-Stock

1+ parts

$99.990

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715

$99.990

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One Stop Electronics

USA . 1,539 parts In-Stock

1+ parts

$826.000

100+ parts

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1,539

$826.000

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Glotronic Ltd.

UK . 3,790 parts In-Stock

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3,790

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Corphita

USA . 1,279 parts In-Stock

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1,279

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Overview

Discover the Texas Instruments CC1070RGWR, a cutting-edge cellphone IC that delivers unmatched performance and reliability. Crafted by a renowned manufacturer in the industry, this surface-mount chip carrier offers seamless integration and exceptional power efficiency with its 2.5/3.3 V power supplies. Whether you're designing smartphones or IoT devices, this industrial-grade RF and baseband circuit ensures optimal functionality in extreme temperatures from -40°C to 105°C. Elevate your projects with the Texas Instruments CC1070RGWR and experience the difference in quality and innovation.

Feature Benefit Bullets

Surface Mount: YES

Allows for easy and efficient installation onto circuit boards, saving time and effort during production.

Power Supplies (V): 2.5/3.3

Offers flexibility in power options, enabling compatibility with a variety of systems and devices.

Package Style (Meter): CHIP CARRIER

Compact and space-saving package design, ideal for applications where board space is limited.

Maximum Operating Temperature: 105 °C

Ensures reliable performance in high-temperature environments, making the product suitable for industrial applications.

Terminal Finish: NICKEL PALLADIUM GOLD

Provides excellent conductivity and corrosion resistance, improving the reliability and longevity of the product.

Technology: CMOS

Utilizes low power consumption and offers high speed operation, making it energy-efficient and fast in processing data.

Nominal Supply Voltage: 3 V

Stable and standard voltage supply, ensuring consistent and reliable performance of the product.

Technical Specifications

Cellphone ICs CC1070RGWR attributes and parameters. Explore more Cellphone ICs devices from Texas Instruments

Specs

JESD-30 Code:

S-XQCC-N20

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

20

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

LCC20,.20SQ,25

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Power Supplies (V):

2.5/3.3

Qualification:

Not Qualified

Sub-Category:

Other Telecom ICs

Nominal Supply Voltage:

3 V

Surface Mount:

YES

Technology:

CMOS

Telecom IC Type:

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.635 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

CC1070RGWR Telecommunications trade compliance attributes, and parameters.

ECCN

5A991.G

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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