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CC1150RST

Texas Instruments

CC1150RST by Texas Instruments

CC1150RST by Texas Instruments is a cellphone IC with 16 terminals in a square package. It operates b/w -40 to 85°C, with power supplies of 1.8/3.6V. This RF and baseband circuit has a terminal pitch of 0.65mm, making it ideal for industrial telecom applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,493 parts In-Stock

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6,493

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Digiode

USA . 4,637 parts In-Stock

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Ashlea Components Ltd

UK . 341 parts In-Stock

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341

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Elcom Components

USA . 200 parts In-Stock

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200

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Inventory MP

USA . 5 parts In-Stock

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Bristol Electronics

USA . 5 parts In-Stock

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Distributors (Availability)

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Parana Technologies

USA . 722 parts In-Stock

1+ parts

$9.641

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$10.231

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722

$9.641

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$10.231

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DigiPath Technology Company

USA . 72 parts In-Stock

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$10.616

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$9.767

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$9.767

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IDEA Electronic Components Group

UK . 1,677 parts In-Stock

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$10.833

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$10.291

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$9.750

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$9.750

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ChromeModa Solutions

Germany . 165 parts In-Stock

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$10.833

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$8.883

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$10.833

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AZTECH Wire

Italy . 266 parts In-Stock

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$18.133

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One Stop Electronics

USA . 478 parts In-Stock

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$374.000

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Ampacity Inc.

Singapore . 1,438 parts In-Stock

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Authorized Procurement Solutions

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Corphita

USA . 1,870 parts In-Stock

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Northwest PG Solutions

USA . 1,122 parts In-Stock

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Native Components

USA . 981 parts In-Stock

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Perfect Parts

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Overview

Unlock the full potential of your cellphone with the Texas Instruments CC1150RST. Manufactured by a trusted industry leader, this Cellphone IC offers unparalleled quality and reliability. Perfect for a wide range of applications, this IC is designed to enhance performance and efficiency. Experience seamless connectivity and improved functionality with the CC1150RST. Upgrade your device today and discover the countless benefits and advantages this product has to offer.

Feature Benefit Bullets

Surface Mount: YES

Surface mount technology allows for efficient and space-saving assembly processes, making this product suitable for compact electronic devices.

Package Shape: SQUARE

The square package shape offers a balanced design and can easily fit into various device layouts without wasting space.

Power Supplies (V): 1.8/3.6

Support for multiple power supply voltages allows for flexibility in designing and optimizing power efficiency for different applications.

No. of Terminals: 16

Having a high number of terminals allows for more connectivity options and functionalities within the integrated circuit.

Package Style (Meter): CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

The combination of chip carrier, heat sink/slug, and very thin profile package styles provides thermal management and space-saving features for improved performance.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature ensures reliability and stability under challenging environmental conditions.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature allows for versatile usage in different climates and temperatures without compromising performance.

Terminal Finish: NICKEL PALLADIUM GOLD

The use of nickel, palladium, and gold finish on terminals ensures durability, corrosion resistance, and optimal electrical conductivity.

Terminal Position: QUAD

The quad terminal position provides a balanced layout for connectivity and signal transmission, enhancing overall performance.

Maximum Seated Height: 0.95 mm

The low maximum seated height of 0.95 mm allows for slim and compact device designs while maintaining high functionality.

Width: 4 mm

The compact width of 4 mm enables easy integration into various device form factors and layouts.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum time of 30 seconds at peak reflow temperature, this product ensures efficient and reliable soldering during assembly.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C enables proper soldering and component bonding for robust electronic connections.

Length: 4 mm

The compact length of 4 mm complements the width and height dimensions for a well-balanced overall package size.

Temperature Grade: INDUSTRIAL

The industrial temperature grade ensures reliable operation within a wide range of temperature conditions, suitable for various industrial applications.

Technology: CMOS

The CMOS technology offers low power consumption, high speed, and compatibility with a wide range of devices, making this product energy-efficient and versatile.

Terminal Form: NO LEAD

The use of lead-free terminal form aligns with environmental regulations and promotes sustainability in manufacturing processes.

Telecom IC Type: RF AND BASEBAND CIRCUIT

The integration of RF and Baseband circuits within the IC enables advanced telecom functionalities and optimized signal processing for enhanced communication capabilities.

Nominal Supply Voltage: 3 V

The nominal supply voltage of 3 V is commonly used in various electronic devices, ensuring compatibility and efficient power consumption.

Terminal Pitch: 0.65 mm

The small terminal pitch of 0.65 mm allows for high-density mounting and compact layouts, essential for modern electronic devices.

Moisture Sensitivity Level (MSL): 3

With a moisture sensitivity level of 3, this product can withstand moderate exposure to moisture during storage and assembly processes, ensuring reliability and quality.

Technical Specifications

Cellphone ICs CC1150RST attributes and parameters. Explore more Cellphone ICs devices from Texas Instruments

Specs

JESD-30 Code:

S-XQCC-N16

JESD-609 Code:

e4

Length:

4 mm

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

16

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

LCC16,.16SQ,25

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.8/3.6

Qualification:

Not Qualified

Maximum Seated Height:

.95 mm

Sub-Category:

Other Telecom ICs

Nominal Supply Voltage:

3 V

Surface Mount:

YES

Technology:

CMOS

Telecom IC Type:

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

4 mm

Trade Compliance

CC1150RST Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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