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TLV321AC36IN

Texas Instruments

TLV321AC36IN by Texas Instruments

TLV321AC36IN by Texas Instruments is a 20-terminal IC for cellphones. It operates b/w -40°C to 85°C, with a supply voltage of 3V. Ideal for baseband circuits, it features CMOS technology and through-hole terminals in a rectangular package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,488 parts In-Stock

1+ parts

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5,488

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Digiode

USA . 1,319 parts In-Stock

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1,319

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 531 parts In-Stock

1+ parts

$7.564

100+ parts

-

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531

$7.564

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Parana Technologies

USA . 223 parts In-Stock

1+ parts

$14.771

100+ parts

-

1k+ parts

$15.209

10k+ parts

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223

$14.771

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$15.209

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ChromeModa Solutions

Germany . 4,044 parts In-Stock

1+ parts

$16.597

100+ parts

$13.610

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4,044

$16.597

$13.610

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IDEA Electronic Components Group

UK . 966 parts In-Stock

1+ parts

$16.597

100+ parts

$15.767

1k+ parts

$14.937

10k+ parts

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966

$16.597

$15.767

$14.937

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One Stop Electronics

USA . 944 parts In-Stock

1+ parts

$359.000

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944

$359.000

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Corphita

USA . 3,336 parts In-Stock

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3,336

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DigiPath Technology Company

USA . 1,807 parts In-Stock

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$14.964

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1,807

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$14.964

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Overview

Unlock the power of next-generation cellphones with the TLV321AC36IN by Texas Instruments. Known for their cutting-edge technology and reliability, Texas Instruments brings you a product that guarantees superior performance and efficiency. Ideal for baseband circuits, this cellphone IC offers unmatched value and benefits to customers looking for top-notch quality and seamless integration. Trust Texas Instruments to deliver excellence in every aspect of your cellphone technology needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material is lightweight and durable, making the product easy to handle and resistant to wear and tear.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient use of space when designing the product, making it compact and easy to incorporate into various devices.

No. of Terminals: 20

Having 20 terminals provides ample connectivity options, allowing for flexibility in circuit design and integration.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, the product can withstand high temperatures, enhancing its reliability in different environments.

Minimum Operating Temperature: -40 °C

The product can operate efficiently at low temperatures down to -40°C, making it suitable for use in a variety of climates and conditions.

Telecom IC Type: BASEBAND CIRCUIT

Baseband circuit technology is essential for communication devices like cellphones, ensuring efficient data transmission and reception.

Nominal Supply Voltage: 3 V

Operates at a standard voltage of 3V, making it compatible with a wide range of power sources and reducing the need for additional voltage regulation components.

Technical Specifications

Cellphone ICs TLV321AC36IN attributes and parameters. Explore more Cellphone ICs devices from Texas Instruments

Specs

JESD-30 Code:

R-PDIP-T20

Length:

24.325 mm

No. of Functions:

1

No. of Terminals:

20

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Shape:

Package Style (Meter):

IN-LINE

Qualification:

Not Qualified

Maximum Seated Height:

5.08 mm

Nominal Supply Voltage:

3 V

Surface Mount:

NO

Technology:

CMOS

Telecom IC Type:

Temperature Grade:

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

7.62 mm

Trade Compliance

TLV321AC36IN Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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