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CC1050PWRG3

Texas Instruments

CC1050PWRG3 by Texas Instruments

CC1050PWRG3 by Texas Instruments is a cellphone IC with 24 terminals, operating at 2.5/3.3V. It features a small outline package style and CMOS technology for RF and baseband circuits. With a temperature range of -40 to 85°C, it is ideal for industrial telecom applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,284 parts In-Stock

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Digiode

USA . 846 parts In-Stock

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Parana Technologies

USA . 1,013 parts In-Stock

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$8.443

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$9.085

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$8.443

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$9.085

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DigiPath Technology Company

USA . 568 parts In-Stock

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$9.297

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568

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ChromeModa Solutions

Germany . 1,829 parts In-Stock

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$9.487

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$7.779

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IDEA Electronic Components Group

UK . 590 parts In-Stock

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$9.487

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$9.013

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$8.538

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590

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AZTECH Wire

Italy . 303 parts In-Stock

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$11.023

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Native Components

USA . 655 parts In-Stock

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$12.585

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Northwest PG Solutions

USA . 978 parts In-Stock

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$13.844

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$12.459

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One Stop Electronics

USA . 912 parts In-Stock

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$78.000

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Component Stockers USA

USA . 749 parts In-Stock

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$99.990

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Glotronic Ltd.

UK . 3,790 parts In-Stock

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Corphita

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Overview

Unlock the potential of your cellphone with the cutting-edge CC1050PWRG3 by Texas Instruments. As a leader in the industry, Texas Instruments guarantees quality and reliability in their products. The CC1050PWRG3 is a versatile Cellphone IC that offers seamless integration and superior performance. With its advanced technology and industrial-grade construction, this IC ensures optimal functionality in various telecommunications applications. Experience the value and benefits of Texas Instruments' superior engineering with the CC1050PWRG3.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used in the package body provides durability and protection to the semiconductor components inside, ensuring a longer lifespan for the product.

Surface Mount: YES

Being surface mountable makes the IC easy to install on circuit boards, saving time and effort during the manufacturing process.

Power Supplies (V): 2.5/3.3

The availability of multiple power supply options allows for flexibility in the integration of the IC into various electronic devices, catering to different voltage requirements.

Terminal Finish: NICKEL PALLADIUM GOLD

The nickel palladium gold terminal finish provides excellent conductivity and corrosion resistance, ensuring reliable electrical connections for the IC.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the IC energy-efficient and reliable in its operation.

Telecom IC Type: RF AND BASEBAND CIRCUIT

Having both RF and baseband circuit capabilities in one IC simplifies the design and development of telecommunication devices, reducing complexity and cost.

Technical Specifications

Cellphone ICs CC1050PWRG3 attributes and parameters. Explore more Cellphone ICs devices from Texas Instruments

Specs

JESD-30 Code:

R-PDSO-G24

JESD-609 Code:

e4

Length:

7.8 mm

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

24

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP24,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

2.5/3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sub-Category:

Other Telecom ICs

Nominal Supply Voltage:

3 V

Surface Mount:

YES

Technology:

CMOS

Telecom IC Type:

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

4.4 mm

Trade Compliance

CC1050PWRG3 Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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