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CC2511F32RSP

Texas Instruments

CC2511F32RSP by Texas Instruments

CC2511F32RSP by Texas Instruments is a cellphone IC with 36 terminals in a square chip carrier package. Operating b/w 0-85°C, it features CMOS technology and RF/baseband circuitry for telecom applications. With a nominal voltage of 3.3V, this surface-mount IC has a terminal pitch of 0.5mm and low profile at 0.9mm seated height.

Median Price

$6.188

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 444 parts In-Stock

1+ parts

$6.180

100+ parts

$6.090

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-

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444

$6.180

$6.090

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Texas Instruments

USA . 5,995 parts In-Stock

1+ parts

$6.188

100+ parts

$5.045

1k+ parts

$3.363

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5,995

$6.188

$5.045

$3.363

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Rochester

USA . 752 parts In-Stock

1+ parts

-

100+ parts

$5.220

1k+ parts

$4.670

10k+ parts

$4.390

752

-

$5.220

$4.670

$4.390

DigiKey

USA . 752 parts In-Stock

1+ parts

-

100+ parts

$6.860

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752

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$6.860

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Verical

USA . 442 parts In-Stock

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$6.525

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$5.838

10k+ parts

$5.487

442

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$6.525

$5.838

$5.487

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 450 parts In-Stock

1+ parts

$4.605

100+ parts

-

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450

$4.605

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Digiode

USA . 2,060 parts In-Stock

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$4.826

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2,060

$4.826

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DigiKey Marketplace

USA . 1,389 parts In-Stock

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1,389

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Vyrian

USA . 1,120 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 490 parts In-Stock

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490

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Bristol Electronics

USA . 490 parts In-Stock

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490

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Distributors (Availability)

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Advanced Electronics

New Zealand . 150 parts In-Stock

1+ parts

$0.982

100+ parts

$0.894

1k+ parts

$0.805

10k+ parts

-

150

$0.982

$0.894

$0.805

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Corohmni

South Africa . 222 parts In-Stock

1+ parts

$2.865

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222

$2.865

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Corphita

USA . 1,306 parts In-Stock

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$4.572

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1,306

$4.572

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Netroflash

USA . 1,000 parts In-Stock

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$4.605

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$4.605

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Continental Prestige Electronics

USA . 26 parts In-Stock

1+ parts

$7.270

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26

$7.270

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Parana Technologies

USA . 1,208 parts In-Stock

1+ parts

$15.045

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$15.459

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$15.045

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$15.459

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DigiPath Technology Company

USA . 598 parts In-Stock

1+ parts

$16.566

100+ parts

$15.241

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598

$16.566

$15.241

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ChromeModa Solutions

Germany . 4,914 parts In-Stock

1+ parts

$16.904

100+ parts

$13.861

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4,914

$16.904

$13.861

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IDEA Electronic Components Group

UK . 162 parts In-Stock

1+ parts

$16.904

100+ parts

$16.059

1k+ parts

$15.214

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162

$16.904

$16.059

$15.214

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GreenTree Electronics

Israel . 17,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 6,700 parts In-Stock

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6,700

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A-Z Elektronik GmbH

Germany . 6,267 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,178 parts In-Stock

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Glotronic Ltd.

UK . 3,790 parts In-Stock

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Perfect Parts

USA . 2,568 parts In-Stock

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Kepictronics

USA . 100 parts In-Stock

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100

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Overview

Unlock the power of seamless connectivity with the CC2511F32RSP by Texas Instruments. Crafted with precision and expertise, this cellphone IC offers unrivaled quality and performance. From its surface mount capability to its advanced technology, this product is designed to exceed expectations. Whether you're looking to enhance your smartphone's capabilities or streamline your communication devices, the CC2511F32RSP delivers unparalleled value and benefits. Elevate your projects with this innovative solution and experience the difference today.

Feature Benefit Bullets

Surface Mount: YES

The surface mount feature allows for easy installation and soldering onto a printed circuit board, saving time and effort during assembly.

Package Shape: SQUARE

The square package shape provides efficient use of space on the PCB, enabling a compact design for the cellphone ICs.

Power Supplies (V): 3

The 3V power supply ensures compatibility with standard voltage levels in cellphones, making it a reliable choice for powering the ICs.

No. of Terminals: 36

With 36 terminals, this product offers a higher level of connectivity options, allowing for more versatile usage in cellphone applications.

Package Style (Meter): CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

The combination of chip carrier, heat sink/slug, and very thin profile package styles offer enhanced thermal management and space efficiency for the ICs.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature of 85°C ensures reliability and stability under various operating conditions in cellphones.

Minimum Operating Temperature: 0 °C

The low minimum operating temperature of 0°C means the ICs can function effectively in both cold and hot environments, enhancing their versatility.

Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)

The use of nickel, palladium, and gold for terminal finish enhances the conductivity, corrosion resistance, and durability of the connections in the ICs.

Terminal Position: QUAD

The quad terminal position offers stable and secure connections, reducing the chances of disconnection or signal interference in the cellphones.

Maximum Seated Height: 0.9 mm

The low maximum seated height of 0.9mm contributes to a slim and compact design for the cellphones, optimizing space utilization.

Width: 6 mm

The compact width of 6mm allows for efficient placement and alignment of the ICs on the PCB, facilitating the overall design structure of the cellphones.

Peak Reflow Temperature °C: 260

The high peak reflow temperature of 260°C ensures secure soldering and reworkability during the manufacturing process, leading to reliable product quality.

Length: 6 mm

The short length of 6mm contributes to the overall compactness of the cellphone ICs, enabling a space-saving design for modern mobile devices.

Technology: CMOS

The CMOS technology offers low power consumption and high noise immunity, making the ICs energy-efficient and reliable for cellphone applications.

Terminal Form: NO LEAD

The lead-free terminal form complies with environmental standards and regulations, ensuring a sustainable and eco-friendly choice for cellphone manufacturers.

Telecom IC Type: RF AND BASEBAND CIRCUIT

The inclusion of RF and baseband circuit types in the telecom IC enhances the communication and processing capabilities of cellphones, supporting advanced functionalities.

Nominal Supply Voltage: 3.3 V

The nominal supply voltage of 3.3V provides stable power delivery to the ICs, ensuring optimal performance and compatibility with standard voltage levels in cellphones.

Terminal Pitch: 0.5 mm

The small terminal pitch of 0.5mm allows for high-density packaging of the ICs on the PCB, enabling efficient use of space and contributing to a streamlined design.

Moisture Sensitivity Level (MSL): 3

The MSL 3 rating indicates that the ICs have a moderate sensitivity to moisture, making them suitable for use in various environmental conditions without compromising performance.

Technical Specifications

Cellphone ICs CC2511F32RSP attributes and parameters. Explore more Cellphone ICs devices from Texas Instruments

Specs

JESD-30 Code:

S-XQCC-N36

JESD-609 Code:

e4

Length:

6 mm

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

36

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

LCC36,.25SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

3

Qualification:

Not Qualified

Maximum Seated Height:

.9 mm

Sub-Category:

Other Telecom ICs

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Technology:

CMOS

Telecom IC Type:

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

6 mm

Trade Compliance

CC2511F32RSP Telecommunications trade compliance attributes, and parameters.

ECCN

5A992.C

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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