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CC1050-RTB1

Texas Instruments

CC1050-RTB1 by Texas Instruments

CC1050-RTB1 by Texas Instruments is a cellphone IC with 24 terminals in a small outline package. It operates b/w -40 to 85°C, suitable for industrial use. This RF and baseband circuit has a nominal voltage of 3V, making it ideal for telecom applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,779 parts In-Stock

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7,779

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Digiode

USA . 1,754 parts In-Stock

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1,754

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Distributors (Availability)

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Native Components

USA . 293 parts In-Stock

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$0.439

100+ parts

-

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$0.421

293

$0.439

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$0.421

Northwest PG Solutions

USA . 358 parts In-Stock

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$0.483

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$0.426

358

$0.483

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$0.426

Parana Technologies

USA . 2,188 parts In-Stock

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$12.828

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$13.300

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2,188

$12.828

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$13.300

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ChromeModa Solutions

Germany . 3,407 parts In-Stock

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$14.414

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$11.819

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3,407

$14.414

$11.819

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IDEA Electronic Components Group

UK . 1,087 parts In-Stock

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$14.414

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$13.693

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$12.973

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1,087

$14.414

$13.693

$12.973

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AZTECH Wire

Italy . 332 parts In-Stock

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$17.180

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332

$17.180

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One Stop Electronics

USA . 1,142 parts In-Stock

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$465.000

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$465.000

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Ampacity Inc.

Singapore . 690 parts In-Stock

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$673.000

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690

$673.000

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Glotronic Ltd.

UK . 3,790 parts In-Stock

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DigiPath Technology Company

USA . 1,633 parts In-Stock

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$12.996

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$12.996

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Corphita

USA . 1,345 parts In-Stock

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Overview

Upgrade your cellphone performance with the CC1050-RTB1 by Texas Instruments, a leading manufacturer known for top-quality products. This Cellphone IC offers unparalleled connectivity and reliability, making it a must-have in the telecom industry. With its advanced technology and industrial-grade design, this RF and baseband circuit ensures seamless communication. Trust Texas Instruments to deliver innovative solutions that exceed expectations. Experience the difference with the CC1050-RTB1, where quality meets value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the IC, ensuring longevity and reliability in various operating conditions.

Surface Mount: YES

Surface mount technology allows for easy and efficient PCB assembly, making the integration of this IC seamless and cost-effective.

No. of Terminals: 24

Having a high number of terminals allows for a greater range of connectivity options, enhancing the versatility and functionality of the IC.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature ensures that the IC can perform reliably even in demanding industrial environments with elevated temperatures.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature ensures that the IC can function effectively in colder environments, making it suitable for a wide range of applications.

Nominal Supply Voltage: 3 V

The nominal supply voltage of 3V is common in many applications, allowing for easy integration and compatibility with existing systems.

Technical Specifications

Cellphone ICs CC1050-RTB1 attributes and parameters. Explore more Cellphone ICs devices from Texas Instruments

Specs

JESD-30 Code:

R-PDSO-G24

JESD-609 Code:

e4

Length:

7.8 mm

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

24

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1.2 mm

Nominal Supply Voltage:

3 V

Surface Mount:

YES

Technology:

CMOS

Telecom IC Type:

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

4.4 mm

Trade Compliance

CC1050-RTB1 Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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