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TRF6900PTR

Texas Instruments

TRF6900PTR by Texas Instruments

TRF6900PTR by Texas Instruments is a cellphone IC with 48 terminals, operating at 2.2-3.6V. It features a flatpack, low profile package style suitable for RF and baseband circuits in telecom applications. With a temperature range of 0-70°C, it is ideal for commercial-grade devices requiring CMOS technology.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,538 parts In-Stock

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Digiode

USA . 2,137 parts In-Stock

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Distributors (Availability)

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AZTECH Wire

Italy . 274 parts In-Stock

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$5.470

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Parana Technologies

USA . 2,029 parts In-Stock

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$8.844

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$9.532

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$8.844

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$9.532

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ChromeModa Solutions

Germany . 2,236 parts In-Stock

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$9.937

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$8.148

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$9.937

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IDEA Electronic Components Group

UK . 1,869 parts In-Stock

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$9.937

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$9.440

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$8.943

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1,869

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$8.943

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One Stop Electronics

USA . 1,608 parts In-Stock

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$462.000

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A-Z Elektronik GmbH

Germany . 6,843 parts In-Stock

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Corphita

USA . 4,664 parts In-Stock

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Kepictronics

USA . 1,000 parts In-Stock

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DigiPath Technology Company

USA . 31 parts In-Stock

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$8.959

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Overview

Upgrade your cellphone's performance with the TRF6900PTR by Texas Instruments, the leading manufacturer of high-quality Cellphone ICs. With a durable plastic/epoxy package, this RF and baseband circuit offers unparalleled reliability and efficiency. Perfect for a wide range of applications, this flatpack, low profile, fine pitch IC provides a seamless integration into your device. Experience the value and benefits of Texas Instruments' cutting-edge technology with the TRF6900PTR, ensuring a superior performance and connectivity for your mobile device.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material is lightweight, durable, and cost-effective, making it a suitable choice for mobile phone ICs that need to be compact and robust.

Surface Mount: YES

Surface mount technology allows for easy and efficient PCB assembly, reducing manufacturing time and costs for cellphone ICs.

Power Supplies (V): 2.2/3.6

Support for a wide range of power supplies allows for flexibility in usage scenarios and compatibility with different mobile phone models.

No. of Terminals: 48

Having a high number of terminals enables the IC to handle multiple functions and connections within the phone, increasing its versatility.

Package Style (Meter): FLATPACK, LOW PROFILE, FINE PITCH

The flatpack, low profile, and fine pitch design of the package ensures efficient use of space within the mobile phone, enabling a sleek and slim design.

Maximum Operating Temperature: 70 °C

With a high maximum operating temperature, the IC can withstand heat and operate reliably even under demanding conditions.

Minimum Operating Temperature: 0 °C

The low minimum operating temperature ensures the IC can function in cold environments, providing consistent performance in various temperature conditions.

Terminal Position: QUAD

The quad terminal position allows for efficient connection and communication between different components of the mobile phone, enhancing overall functionality.

Maximum Seated Height: 1.6 mm

The low maximum seated height helps in maintaining a slim profile for the mobile phone, contributing to a sleek and modern design.

Width: 7 mm

Compact width enables the IC to fit easily within the phone's circuitry, ensuring efficient usage of space and facilitating a streamlined design.

Length: 7 mm

The short length of the IC makes it suitable for integration into compact mobile phone designs, optimizing space usage and enabling a more compact form factor.

Temperature Grade: COMMERCIAL

Commercial grade temperature tolerance ensures stable performance under standard operating conditions, making the IC ideal for consumer mobile phone applications.

Technology: CMOS

CMOS technology offers low power consumption, high noise immunity, and compatibility with various mobile phone designs, making it a reliable choice for cellphone ICs.

Terminal Form: GULL WING

Gull wing terminal form provides strong mechanical support and easy soldering during PCB assembly, ensuring a secure and reliable connection for the IC.

Telecom IC Type: RF AND BASEBAND CIRCUIT

Support for RF and baseband circuits in the telecom IC type allows for seamless communication and data processing within the mobile phone, enhancing its overall functionality.

Nominal Supply Voltage: 3 V

Stable 3V nominal supply voltage ensures consistent power delivery to the IC, enabling reliable performance and efficient operation within the mobile phone.

Terminal Pitch: 0.5 mm

The fine terminal pitch of 0.5mm allows for high-density packaging of components, maximizing space efficiency and enabling a more compact design for the mobile phone.

Technical Specifications

Cellphone ICs TRF6900PTR attributes and parameters. Explore more Cellphone ICs devices from Texas Instruments

Specs

JESD-30 Code:

S-PQFP-G48

Length:

7 mm

No. of Functions:

1

No. of Terminals:

48

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

QFP48,.35SQ,20

Package Shape:

Package Style (Meter):

FLATPACK, LOW PROFILE, FINE PITCH

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

2.2/3.6

Qualification:

Not Qualified

Maximum Seated Height:

1.6 mm

Sub-Category:

Other Telecom ICs

Nominal Supply Voltage:

3 V

Surface Mount:

YES

Technology:

CMOS

Telecom IC Type:

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

7 mm

Trade Compliance

TRF6900PTR Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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