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AFE8030EDIALK

Texas Instruments

AFE8030EDIALK by Texas Instruments

AFE8030EDIALK by Texas Instruments is a Cellphone IC with 400 terminals in a square package. It operates b/w -40 to 85°C, with peak reflow temp of 220°C. This RF and baseband circuit is ideal for telecom applications due to its fine pitch grid array style and bottom terminal position.

Median Price

$3,136.000

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 1,387 parts In-Stock

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$3,136.000

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Digiode

USA . 3,175 parts In-Stock

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$2,979.200

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Vyrian

USA . 8,559 parts In-Stock

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VNN

France . 840 parts In-Stock

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840

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Nova Conductors

Japan . 92 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 629 parts In-Stock

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$8.577

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629

$8.577

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AZTECH Wire

Italy . 925 parts In-Stock

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$19.580

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925

$19.580

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Ampacity Inc.

Singapore . 964 parts In-Stock

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$2,665.600

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Corphita

USA . 1,817 parts In-Stock

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Continental Prestige Electronics

USA . 3,295 parts In-Stock

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Argo Parts USA

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Aranea Global

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Overview

Experience the cutting-edge technology of the AFE8030EDIALK by Texas Instruments, a top-of-the-line cellphone IC that delivers unmatched performance and reliability. Manufactured by industry leader Texas Instruments, this innovative product is designed for seamless integration in a wide range of applications. With its high-quality construction and advanced features, the AFE8030EDIALK offers customers exceptional value, superior benefits, and a competitive edge in today's fast-paced tech market. Discover the endless possibilities with the AFE8030EDIALK and elevate your product to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the IC, ensuring a longer lifespan for the product.

Surface Mount: YES

Surface mount technology allows for easy and efficient installation on circuit boards, saving time and space in the design.

Package Shape: SQUARE

The square shape of the package allows for efficient use of space on the circuit board, maximizing the functionality of the product.

No. of Terminals: 400

With a high number of terminals, this IC can support complex circuitry and provide various functions within the cellphone.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature ensures that the IC can withstand heat and operate reliably in various environments.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature allows the IC to function in cold conditions, making it suitable for a wide range of applications.

Terminal Finish: TIN LEAD

The tin lead finish provides a reliable connection for the terminals, ensuring consistent performance and signal transmission.

Width: 17 mm

The compact width of the IC allows for space-saving design in the cellphone, making it suitable for slim and sleek devices.

Telecom IC Type: RF AND BASEBAND CIRCUIT

This IC is designed specifically for telecom applications, providing reliable performance for RF and baseband circuitry in cellphones.

Technical Specifications

Cellphone ICs AFE8030EDIALK attributes and parameters. Explore more Cellphone ICs devices from Texas Instruments

Specs

Additional Features:

RF frequency(Min)(MHz) : 600; RF frequency(Max)(MHz) : 5500

JESD-30 Code:

S-PBGA-B400

JESD-609 Code:

e0

Length:

17 mm

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

400

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA400,20X20,32

Package Shape:

Package Style (Meter):

GRID ARRAY, FINE PITCH

Peak Reflow Temperature (C):

220

Maximum Seated Height:

2.65 mm

Surface Mount:

YES

Telecom IC Type:

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

17 mm

Trade Compliance

AFE8030EDIALK Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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