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LMV228TL

Texas Instruments

LMV228TL by Texas Instruments

LMV228TL by Texas Instruments is a cellphone IC with a package style of grid array, very thin profile, and fine pitch. It operates in industrial temperature range from -40 to 85°C, suitable for RF and baseband circuits in telecom applications. This surface-mount IC has 4 terminals with 0.5mm pitch and a compact square shape measuring 1.014mm x 1.014mm.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,135 parts In-Stock

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Digiode

USA . 5,023 parts In-Stock

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5,023

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Anansix

USA . 1,358 parts In-Stock

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1,358

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Classic Components Corporation

USA . 116 parts In-Stock

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NAC Semi

USA . 15 parts In-Stock

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,762 parts In-Stock

1+ parts

$10.824

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-

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$11.301

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1,762

$10.824

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$11.301

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IDEA Electronic Components Group

UK . 1,317 parts In-Stock

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$12.162

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$11.554

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$10.946

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1,317

$12.162

$11.554

$10.946

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ChromeModa Solutions

Germany . 1,270 parts In-Stock

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$12.162

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$9.973

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1,270

$12.162

$9.973

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AZTECH Wire

Italy . 699 parts In-Stock

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$18.994

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699

$18.994

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One Stop Electronics

USA . 431 parts In-Stock

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$873.000

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431

$873.000

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DigiPath Technology Company

USA . 2,121 parts In-Stock

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$10.965

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2,121

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Corphita

USA . 2,028 parts In-Stock

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Kepictronics

USA . 67 parts In-Stock

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Overview

Enhance your cellphone's performance with the LMV228TL by Texas Instruments. Known for their top-notch quality and innovative technology, Texas Instruments delivers cutting-edge Cellphone ICs that guarantee reliability and efficiency. This versatile component is perfect for RF and baseband circuits, providing seamless integration and optimal functionality. With a wide operating temperature range and compact design, the LMV228TL offers exceptional value and benefits to customers looking to elevate their mobile device experience. Trust Texas Instruments to deliver superior solutions for all your cellphone IC needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and resistance to heat, making the product reliable for long-term use.

Surface Mount: YES

Surface mount packaging makes installation and assembly easier, saving time and effort during manufacturing.

Package Shape: SQUARE

Square package shape allows for efficient use of space in compact devices, optimizing the design layout.

No. of Terminals: 4

Having a small number of terminals simplifies the connection process and reduces the risk of errors during installation.

Terminal Position: BOTTOM

Bottom terminal position improves heat dissipation and signal integrity, enhancing overall performance.

Temperature Grade: INDUSTRIAL

Industrial temperature grade ensures reliable operation in harsh environments, making it suitable for a wide range of applications.

Nominal Supply Voltage: 2.7 V

Optimal supply voltage of 2.7V allows for efficient power consumption without compromising performance.

Technical Specifications

Cellphone ICs LMV228TL attributes and parameters. Explore more Cellphone ICs devices from Texas Instruments

Specs

JESD-30 Code:

S-PBGA-B4

Length:

1.014 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

4

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Qualification:

Not Qualified

Maximum Seated Height:

.675 mm

Nominal Supply Voltage:

2.7 V

Surface Mount:

YES

Telecom IC Type:

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Width:

1.014 mm

Trade Compliance

LMV228TL Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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