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CC1151QRHBRG4Q1

Texas Instruments

CC1151QRHBRG4Q1 by Texas Instruments

CC1151QRHBRG4Q1 by Texas Instruments is a Cellphone IC with 32 terminals in a square chip carrier package. Operating temperature ranges from -40 to 125 °C, suitable for automotive applications. It features RF and baseband circuit for data rate of 0.25 Mbps, with power supplies at 1.8/3.6 V.

Median Price

$2.130

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 31 parts In-Stock

1+ parts

-

100+ parts

$2.130

1k+ parts

$1.900

10k+ parts

$1.790

31

-

$2.130

$1.900

$1.790

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,705 parts In-Stock

1+ parts

$2.242

100+ parts

-

1k+ parts

-

10k+ parts

-

2,705

$2.242

-

-

-

Vyrian

USA . 7,544 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,544

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 31 parts In-Stock

1+ parts

$2.010

100+ parts

-

1k+ parts

-

10k+ parts

-

31

$2.010

-

-

-

Semicontronic

India . 31 parts In-Stock

1+ parts

$2.010

100+ parts

$1.960

1k+ parts

$1.950

10k+ parts

-

31

$2.010

$1.960

$1.950

-

Corphita

USA . 464 parts In-Stock

1+ parts

$2.124

100+ parts

-

1k+ parts

-

10k+ parts

-

464

$2.124

-

-

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Corohmni

South Africa . 317 parts In-Stock

1+ parts

$2.360

100+ parts

-

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-

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317

$2.360

-

-

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AZTECH Wire

Italy . 245 parts In-Stock

1+ parts

$9.500

100+ parts

-

1k+ parts

-

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245

$9.500

-

-

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Parana Technologies

USA . 564 parts In-Stock

1+ parts

$15.540

100+ parts

-

1k+ parts

$15.915

10k+ parts

-

564

$15.540

-

$15.915

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DigiPath Technology Company

USA . 1,203 parts In-Stock

1+ parts

$17.112

100+ parts

$15.743

1k+ parts

-

10k+ parts

-

1,203

$17.112

$15.743

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ChromeModa Solutions

Germany . 3,639 parts In-Stock

1+ parts

$17.461

100+ parts

$14.318

1k+ parts

-

10k+ parts

-

3,639

$17.461

$14.318

-

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IDEA Electronic Components Group

UK . 2,142 parts In-Stock

1+ parts

$17.461

100+ parts

$16.588

1k+ parts

$15.715

10k+ parts

-

2,142

$17.461

$16.588

$15.715

-

Native Components

USA . 562 parts In-Stock

1+ parts

$474.208

100+ parts

$464.724

1k+ parts

$459.982

10k+ parts

$455.240

562

$474.208

$464.724

$459.982

$455.240

Northwest PG Solutions

USA . 803 parts In-Stock

1+ parts

$521.629

100+ parts

-

1k+ parts

-

10k+ parts

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803

$521.629

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Overview

Discover the Texas Instruments CC1151QRHBRG4Q1, a top-of-the-line Cellphone IC that delivers unmatched quality and reliability in every application. Manufactured with precision and expertise by Texas Instruments, this product offers customers immense value with its cutting-edge technology and outstanding performance. With a wide range of features and benefits, including high power supplies, optimal temperature range, and efficient terminal finish, this IC is perfect for all your cellphone needs. Trust Texas Instruments for superior products that elevate your experience to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the product lightweight and durable, ideal for use in portable devices like cellphones.

Surface Mount: YES

Being surface mountable allows for easy integration into PCBs, saving space and making assembly more efficient.

Screening Level: AEC-Q100

The AEC-Q100 screening level ensures that the product meets automotive industry reliability standards, making it suitable for use in automotive applications.

Package Shape: SQUARE

The square package shape helps with easy orientation and placement during assembly, improving accuracy and efficiency.

Power Supplies (V): 1.8/3.6

Support for both 1.8V and 3.6V power supplies allows for flexibility in design and compatibility with various voltage requirements in cellphone circuits.

No. of Terminals: 32

The high number of terminals enables connections to multiple components, facilitating the integration of complex circuitry in cellphones.

Terminal Finish: NICKEL PALLADIUM GOLD

The use of nickel palladium gold as the terminal finish ensures good conductivity, corrosion resistance, and reliability in electrical connections.

Temperature Grade: AUTOMOTIVE

The automotive temperature grade indicates that the product can withstand harsh operating conditions typically encountered in automotive environments, ensuring high reliability and performance.

Data Rate: 0.25 Mbps

The data rate of 0.25 Mbps is suitable for handling communication tasks in cellphones, providing efficient data transfer for various applications.

Technical Specifications

Cellphone ICs CC1151QRHBRG4Q1 attributes and parameters. Explore more Cellphone ICs devices from Texas Instruments

Specs

Data Rate:

.25 Mbps

JESD-30 Code:

S-PQCC-N32

JESD-609 Code:

e4

Length:

5 mm

Moisture Sensitivity Level (MSL):

2

No. of Functions:

1

No. of Terminals:

32

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC32,.2SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.8/3.6

Qualification:

Not Qualified

Screening Level:

AEC-Q100

Maximum Seated Height:

1 mm

Sub-Category:

Other Telecom ICs

Nominal Supply Voltage:

3 V

Surface Mount:

YES

Telecom IC Type:

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

5 mm

Trade Compliance

CC1151QRHBRG4Q1 Telecommunications trade compliance attributes, and parameters.

ECCN

5A991.G

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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