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TRF370317IRGETG4

Texas Instruments

TRF370317IRGETG4 by Texas Instruments

TRF370317IRGETG4 by Texas Instruments is a cellphone IC with 24 terminals, operating at -40 to 85°C. It features a supply voltage of 5V, RF and baseband circuit for telecom applications, and a compact square package style suitable for industrial use.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,718 parts In-Stock

1+ parts

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4,718

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Digiode

USA . 4,515 parts In-Stock

1+ parts

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4,515

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,630 parts In-Stock

1+ parts

$14.689

100+ parts

-

1k+ parts

$15.131

10k+ parts

-

1,630

$14.689

-

$15.131

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ChromeModa Solutions

Germany . 5,041 parts In-Stock

1+ parts

$16.505

100+ parts

$13.534

1k+ parts

-

10k+ parts

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5,041

$16.505

$13.534

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IDEA Electronic Components Group

UK . 1,939 parts In-Stock

1+ parts

$16.505

100+ parts

$15.680

1k+ parts

$14.854

10k+ parts

-

1,939

$16.505

$15.680

$14.854

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AZTECH Wire

Italy . 416 parts In-Stock

1+ parts

$16.911

100+ parts

-

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416

$16.911

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One Stop Electronics

USA . 315 parts In-Stock

1+ parts

$471.000

100+ parts

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315

$471.000

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Corphita

USA . 3,416 parts In-Stock

1+ parts

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3,416

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DigiPath Technology Company

USA . 54 parts In-Stock

1+ parts

-

100+ parts

$14.881

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54

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$14.881

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Overview

Unlock the potential of your cellphone with the TRF370317IRGETG4 by Texas Instruments. Designed with precision and expertise, this RF and baseband circuit IC offers unmatched performance and reliability. From crystal clear calls to lightning-fast data transfer, this product is a game-changer in the telecommunications industry. Experience seamless connectivity and superior quality with Texas Instruments' cutting-edge technology. Upgrade your device today and discover a whole new world of possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material is lightweight and durable, making it ideal for portable devices like cellphones.

Surface Mount: YES

Surface mount technology allows for a compact design and efficient assembly, saving space and reducing production costs.

Power Supplies (V): 5

Operating at 5 volts provides a stable power supply for the IC, ensuring reliable performance.

Package Shape: SQUARE

The square shape of the package helps with easy placement and alignment during assembly, improving efficiency.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85 °C, the IC can withstand harsh environmental conditions without compromising functionality.

Terminal Finish: NICKEL PALLADIUM GOLD

Nickel Palladium Gold finish provides excellent conductivity and corrosion resistance, enhancing the overall longevity of the IC.

Telecom IC Type: RF AND BASEBAND CIRCUIT

Being designed for RF and baseband circuitry makes this IC suitable for cellphone applications where efficient signal processing is crucial.

Technical Specifications

Cellphone ICs TRF370317IRGETG4 attributes and parameters. Explore more Cellphone ICs devices from Texas Instruments

Specs

JESD-30 Code:

S-PQCC-N24

JESD-609 Code:

e4

Length:

4 mm

Moisture Sensitivity Level (MSL):

2

No. of Functions:

1

No. of Terminals:

24

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC24,.16SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Sub-Category:

Other Telecom ICs

Maximum Supply Current:

.245 mA

Nominal Supply Voltage:

5 V

Surface Mount:

YES

Telecom IC Type:

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

4 mm

Trade Compliance

TRF370317IRGETG4 Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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