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CC2400-RTB1

Texas Instruments

CC2400-RTB1 by Texas Instruments

CC2400-RTB1 by Texas Instruments is a cellphone IC with 48 terminals, operating at -40 to 85°C. It features a supply voltage of 1.8V, RF and baseband circuitry, and low supply current of 0.005mA. Ideal for telecom applications due to its compact square package shape and CMOS technology.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Vyrian

USA . 7,845 parts In-Stock

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Digiode

USA . 2,396 parts In-Stock

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Bristol Electronics

USA . 27 parts In-Stock

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Atlantic Semiconductor

USA . 27 parts In-Stock

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Native Components

USA . 41 parts In-Stock

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$1.510

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Northwest PG Solutions

USA . 2,133 parts In-Stock

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$1.661

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Advanced Electronics

New Zealand . 5,000 parts In-Stock

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$2.989

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$2.720

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$2.451

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$2.989

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AZTECH Wire

Italy . 875 parts In-Stock

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$7.994

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Parana Technologies

USA . 877 parts In-Stock

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$12.515

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$12.962

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ChromeModa Solutions

Germany . 5,790 parts In-Stock

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$14.062

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$11.531

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IDEA Electronic Components Group

UK . 322 parts In-Stock

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$14.062

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$13.359

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$12.656

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One Stop Electronics

USA . 696 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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A-Z Elektronik GmbH

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Alle Elektronik GmbH

Germany . 4,708 parts In-Stock

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Authorized Procurement Solutions

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Corphita

USA . 2,845 parts In-Stock

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DigiPath Technology Company

USA . 642 parts In-Stock

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$12.678

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Kepictronics

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Perfect Parts

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Computer Components Inc. - USA

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Overview

Unlock the power of seamless connectivity with the CC2400-RTB1 by Texas Instruments. As a leader in cellphone ICs, Texas Instruments delivers unparalleled quality and reliability in its products. The CC2400-RTB1 offers a wide range of applications, making it a versatile choice for various projects. Experience the value and benefits of this innovative product, providing customers with high-performance solutions that exceed expectations. Elevate your next project with the CC2400-RTB1 and discover the advantages of cutting-edge technology at your fingertips.

Feature Benefit Bullets

Surface Mount: YES

Surface mount technology allows for easier and more efficient PCB assembly, saving time and cost during manufacturing.

Package Shape: SQUARE

Square package shape provides better uniformity in layout and allows for more efficient use of space on the PCB.

Power Supplies (V): 1.8,1.8/3.3

Support for multiple power supply voltages allows for flexibility in design and compatibility with different system requirements.

No. of Terminals: 48

Having a higher number of terminals provides greater connectivity options and functionality for the IC.

Package Style (Meter): CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Different package styles offer versatility in mounting options and thermal management for the IC.

Maximum Operating Temperature: 85 °C

High maximum operating temperature ensures reliable performance in various environmental conditions.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the IC efficient and reliable.

Terminal Form: NO LEAD

No-lead terminals improve thermal efficiency and reliability in solder connections.

Telecom IC Type: RF AND BASEBAND CIRCUIT

Support for both RF and baseband circuits allows for seamless communication integration in cellular devices.

Technical Specifications

Cellphone ICs CC2400-RTB1 attributes and parameters. Explore more Cellphone ICs devices from Texas Instruments

Specs

JESD-30 Code:

S-XQCC-N48

Length:

7 mm

No. of Functions:

1

No. of Terminals:

48

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

LCC48,.27SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

1.8,1.8/3.3

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Sub-Category:

Other Telecom ICs

Maximum Supply Current:

.005 mA

Nominal Supply Voltage:

1.8 V

Surface Mount:

YES

Technology:

CMOS

Telecom IC Type:

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

7 mm

Trade Compliance

CC2400-RTB1 Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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