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LMV228UR

Texas Instruments

LMV228UR by Texas Instruments

LMV228UR by Texas Instruments is a cellphone IC with a package style of grid array, very thin profile, and fine pitch. It operates in industrial temperature grades from -40 to 85°C, suitable for RF and baseband circuits in telecom applications. The IC has a nominal voltage of 2.7V and features surface mount technology with tin lead terminal finish.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,647 parts In-Stock

1+ parts

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3,647

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Anansix

USA . 2,719 parts In-Stock

1+ parts

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2,719

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Digiode

USA . 1,653 parts In-Stock

1+ parts

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1,653

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Bristol Electronics

USA . 1,000 parts In-Stock

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1,000

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Dan-Mar Components

USA . 1,000 parts In-Stock

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1,000

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,033 parts In-Stock

1+ parts

$14.196

100+ parts

-

1k+ parts

$14.652

10k+ parts

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1,033

$14.196

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$14.652

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AZTECH Wire

Italy . 767 parts In-Stock

1+ parts

$15.264

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767

$15.264

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DigiPath Technology Company

USA . 1,831 parts In-Stock

1+ parts

$15.632

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1,831

$15.632

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IDEA Electronic Components Group

UK . 1,713 parts In-Stock

1+ parts

$15.951

100+ parts

$15.153

1k+ parts

$14.356

10k+ parts

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1,713

$15.951

$15.153

$14.356

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ChromeModa Solutions

Germany . 1,553 parts In-Stock

1+ parts

$15.951

100+ parts

$13.080

1k+ parts

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1,553

$15.951

$13.080

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One Stop Electronics

USA . 1,197 parts In-Stock

1+ parts

$94.000

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1,197

$94.000

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Corphita

USA . 2,479 parts In-Stock

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2,479

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Overview

Unlock the potential of your cellphone with the LMV228UR by Texas Instruments. Crafted with precision and expertise, this high-quality Cellphone IC offers unmatched performance and reliability. Ideal for RF and baseband circuits, this product is designed to enhance the functionality and efficiency of your device. With its innovative design and advanced features, the LMV228UR provides customers with exceptional value, benefits, and advantages. Experience the difference with Texas Instruments.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic and epoxy materials provide durability and reliability for the IC, ensuring a long lifespan for the product.

Surface Mount: YES

Surface mount technology allows for easy and efficient integration of the IC onto the PCB, saving space and reducing overall manufacturing costs.

Package Shape: SQUARE

Square package shape makes it easier to position and align the IC on the PCB, facilitating efficient assembly and soldering processes.

No. of Terminals: 4

Having a small number of terminals simplifies the design and integration process, reducing the risk of errors and improving overall reliability.

Maximum Operating Temperature: 85 °C

High maximum operating temperature ensures that the IC can withstand harsh environmental conditions, making it suitable for industrial applications.

Minimum Operating Temperature: -40 °C

Wide operating temperature range enables the IC to operate effectively in both extreme cold and hot conditions, increasing its versatility.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides good solderability and conductivity, ensuring a reliable connection between the IC and the PCB.

Terminal Form: BALL

Ball terminal form allows for easy and reliable connections during the mounting process, reducing the risk of connection failures.

Nominal Supply Voltage: 2.7 V

Low nominal supply voltage enables energy-efficient operation of the IC, making it suitable for battery-powered devices.

Technical Specifications

Cellphone ICs LMV228UR attributes and parameters. Explore more Cellphone ICs devices from Texas Instruments

Specs

JESD-30 Code:

S-PBGA-B4

JESD-609 Code:

e0

Length:

.975 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

4

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Seated Height:

.425 mm

Nominal Supply Voltage:

2.7 V

Surface Mount:

YES

Telecom IC Type:

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

40

Width:

.975 mm

Trade Compliance

LMV228UR Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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