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CC2511F8RSPR

Texas Instruments

CC2511F8RSPR by Texas Instruments

The Texas Instruments CC2511F8RSPR is a cellphone IC with 36 terminals in a square chip carrier package. Operating at 3V, it features RF and baseband circuitry for telecom applications. With a compact size of 6x6mm and CMOS technology, it offers high performance in a small form factor suitable for mobile devices.

Median Price

$3.280

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 2,500 parts In-Stock

1+ parts

$3.280

100+ parts

$3.210

1k+ parts

$3.150

10k+ parts

-

2,500

$3.280

$3.210

$3.150

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,654 parts In-Stock

1+ parts

$2.679

100+ parts

-

1k+ parts

-

10k+ parts

-

2,654

$2.679

-

-

-

Vyrian

USA . 1,484 parts In-Stock

1+ parts

$2.820

100+ parts

-

1k+ parts

-

10k+ parts

-

1,484

$2.820

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 734 parts In-Stock

1+ parts

$0.087

100+ parts

-

1k+ parts

-

10k+ parts

$0.084

734

$0.087

-

-

$0.084

Northwest PG Solutions

USA . 1,671 parts In-Stock

1+ parts

$0.096

100+ parts

-

1k+ parts

-

10k+ parts

$0.084

1,671

$0.096

-

-

$0.084

Semicontronic

India . 2,490 parts In-Stock

1+ parts

$2.400

100+ parts

$2.340

1k+ parts

$2.328

10k+ parts

-

2,490

$2.400

$2.340

$2.328

-

Ampacity Inc.

Singapore . 2,389 parts In-Stock

1+ parts

$2.400

100+ parts

-

1k+ parts

-

10k+ parts

-

2,389

$2.400

-

-

-

Corphita

USA . 250 parts In-Stock

1+ parts

$2.538

100+ parts

-

1k+ parts

-

10k+ parts

-

250

$2.538

-

-

-

Corohmni

South Africa . 277 parts In-Stock

1+ parts

$2.820

100+ parts

-

1k+ parts

-

10k+ parts

-

277

$2.820

-

-

-

Parana Technologies

USA . 2,219 parts In-Stock

1+ parts

$12.051

100+ parts

-

1k+ parts

$12.460

10k+ parts

-

2,219

$12.051

-

$12.460

-

DigiPath Technology Company

USA . 2,264 parts In-Stock

1+ parts

$13.270

100+ parts

$12.209

1k+ parts

-

10k+ parts

-

2,264

$13.270

$12.209

-

-

ChromeModa Solutions

Germany . 5,659 parts In-Stock

1+ parts

$13.541

100+ parts

$11.104

1k+ parts

-

10k+ parts

-

5,659

$13.541

$11.104

-

-

IDEA Electronic Components Group

UK . 2,115 parts In-Stock

1+ parts

$13.541

100+ parts

$12.864

1k+ parts

$12.187

10k+ parts

-

2,115

$13.541

$12.864

$12.187

-

Component Stockers USA

USA . 628 parts In-Stock

1+ parts

$99.990

100+ parts

-

1k+ parts

-

10k+ parts

-

628

$99.990

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 12,691 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

12,691

-

-

-

-

Overview

Elevate your cellphone's performance with the Texas Instruments CC2511F8RSPR Cellphone IC. Crafted by a trusted manufacturer, this surface-mount chip offers unparalleled quality and reliability. Perfect for RF and baseband circuits, this IC provides seamless integration and superior functionality. With a low profile and advanced technology, it delivers exceptional value to customers seeking high-performance solutions. Upgrade your device today and experience the difference with the Texas Instruments CC2511F8RSPR.

Feature Benefit Bullets

Surface Mount: YES

Surface mount technology allows for easy and efficient mounting onto circuit boards, saving space and reducing overall weight of the product.

Package Shape: SQUARE

Square package shape is advantageous for efficient use of space on the circuit board and facilitates easier placement and alignment during assembly.

Power Supplies (V): 3

Operating at a voltage of 3V makes this cellphone IC compatible with common power supplies, ensuring seamless integration into various devices.

No. of Terminals: 36

Having 36 terminals allows for the IC to handle multiple connections and signals, enabling it to support various functions within the cellphone.

Package Style: CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

This package style combination provides effective heat dissipation, protection, and space-saving advantages for improved performance and reliability.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this IC can withstand a wide range of environmental conditions, ensuring stability and durability.

Minimum Operating Temperature: 0 °C

Operating at temperatures as low as 0°C allows for reliable performance in colder environments or during temperature fluctuations.

Terminal Finish: NICKEL PALLADIUM GOLD

The use of nickel, palladium, and gold terminal finish enhances conductivity, corrosion resistance, and overall reliability of the connections.

Terminal Position: QUAD

Quad terminal position enables efficient signal transmission and connection, contributing to the overall performance and functionality of the IC.

Maximum Seated Height: 0.9 mm

With a maximum seated height of 0.9mm, this IC is compact and slim, making it suitable for thinner devices or applications with limited space.

Width: 6 mm

A width of 6mm allows for easy integration into standard circuit board layouts and ensures compatibility with a wide range of device designs.

Maximum Time At Peak Reflow Temperature (s): 30

The maximum time at peak reflow temperature of 30 seconds ensures proper soldering and assembly during manufacturing, leading to reliable connections.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260°C, this IC can withstand the soldering process without damage, ensuring proper assembly and functionality.

Length: 6 mm

A length of 6mm contributes to the overall compactness and space-saving design of the IC, allowing for flexibility in device placement and layout.

Technology: CMOS

CMOS technology offers low power consumption, high integration capabilities, and reliable performance, making this IC an efficient choice for cellphone applications.

Terminal Form: NO LEAD

The no lead terminal form reduces environmental impact and improves recycling processes, aligning with modern eco-friendly standards.

Telecom IC Type: RF AND BASEBAND CIRCUIT

Combining RF and baseband circuit capabilities in one IC simplifies design complexity, enhances performance, and optimizes communication functions within the cellphone.

Nominal Supply Voltage: 3.3 V

Operating at a nominal supply voltage of 3.3V ensures compatibility with standard power sources and promotes stable performance in the cellphone system.

Terminal Pitch: 0.5 mm

The 0.5mm terminal pitch enables high-density packaging and efficient signal routing, enhancing the overall functionality and connectivity of the IC.

Moisture Sensitivity Level (MSL): 3

Having a moisture sensitivity level of 3 indicates the IC's ability to withstand moderate exposure to moisture without compromising performance or reliability.

Technical Specifications

Cellphone ICs CC2511F8RSPR attributes and parameters. Explore more Cellphone ICs devices from Texas Instruments

Specs

JESD-30 Code:

S-XQCC-N36

JESD-609 Code:

e4

Length:

6 mm

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

36

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

LCC36,.25SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

3

Qualification:

Not Qualified

Maximum Seated Height:

.9 mm

Sub-Category:

Other Telecom ICs

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Technology:

CMOS

Telecom IC Type:

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

6 mm

Trade Compliance

CC2511F8RSPR Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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