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HPA02142RGVR

Texas Instruments

HPA02142RGVR by Texas Instruments

Texas Instruments' HPA02142RGVR is a Cellphone IC with 16 terminals in a square chip carrier package. Operating b/w -40 to 85°C, it has a supply voltage of 3V and max current of 4mA. Ideal for RF and baseband circuits, this IC is surface mountable with nickel palladium gold finish.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,180 parts In-Stock

1+ parts

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7,180

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Digiode

USA . 1,206 parts In-Stock

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1,206

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 327 parts In-Stock

1+ parts

$8.262

100+ parts

-

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327

$8.262

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Parana Technologies

USA . 985 parts In-Stock

1+ parts

$13.658

100+ parts

-

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$14.159

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985

$13.658

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$14.159

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DigiPath Technology Company

USA . 2,323 parts In-Stock

1+ parts

$15.039

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2,323

$15.039

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ChromeModa Solutions

Germany . 681 parts In-Stock

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$15.346

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$12.584

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681

$15.346

$12.584

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IDEA Electronic Components Group

UK . 360 parts In-Stock

1+ parts

$15.346

100+ parts

$14.579

1k+ parts

$13.811

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360

$15.346

$14.579

$13.811

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Ampacity Inc.

Singapore . 1,429 parts In-Stock

1+ parts

$595.000

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1,429

$595.000

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One Stop Electronics

USA . 1,242 parts In-Stock

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$696.000

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1,242

$696.000

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Semicontronic

India . 961 parts In-Stock

1+ parts

$697.000

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$679.575

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$676.090

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961

$697.000

$679.575

$676.090

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QUARKTWIN TECHNOLOGY LTD

USA . 14,002 parts In-Stock

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14,002

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Corphita

USA . 1,763 parts In-Stock

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1,763

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Corohmni

South Africa . 207 parts In-Stock

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207

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Overview

Elevate your cellphone performance with the HPA02142RGVR by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-quality Cellphone ICs that guarantee reliability and efficiency. This versatile chip carrier boasts a very thin profile and a nickel palladium gold terminal finish for optimal performance. With a nominal supply voltage of 3V and a maximum supply current of 4mA, this RF and baseband circuit promises exceptional functionality. Whether you're looking to enhance your smartphone's capabilities or improve communication systems, the HPA02142RGVR offers unmatched value and benefits to customers seeking cutting-edge technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides good durability and protection for the Cellphone ICs, making it a reliable choice for long-term use.

Surface Mount: YES

Being surface mountable allows for easy and efficient assembly of the Cellphone ICs onto circuit boards, saving time and ensuring accurate placement.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, the Cellphone ICs can perform reliably even in challenging environmental conditions, increasing their versatility and applicability.

Nominal Supply Voltage: 3 V

Operating at a nominal supply voltage of 3V ensures energy efficiency and compatibility with various power sources, making the Cellphone ICs suitable for a wide range of devices.

Moisture Sensitivity Level (MSL): 2

Having a moisture sensitivity level of 2 indicates that the Cellphone ICs can withstand moderate exposure to moisture during storage or assembly, reducing the risk of damage and ensuring product longevity.

Technical Specifications

Cellphone ICs HPA02142RGVR attributes and parameters. Explore more Cellphone ICs devices from Texas Instruments

Specs

JESD-30 Code:

S-PQCC-N16

JESD-609 Code:

e4

Length:

4 mm

Moisture Sensitivity Level (MSL):

2

No. of Functions:

1

No. of Terminals:

16

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC16,.16SQ,25

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1 mm

Maximum Supply Current:

4 mA

Nominal Supply Voltage:

3 V

Surface Mount:

YES

Telecom IC Type:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

4 mm

Trade Compliance

HPA02142RGVR Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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