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HPA01083RGVR

Texas Instruments

HPA01083RGVR by Texas Instruments

Texas Instruments' HPA01083RGVR is a cellphone IC with 16 terminals in a square chip carrier package. Operating from -40 to 85°C, it's ideal for RF and baseband circuits. With a compact size of 4x4mm and no-lead terminal form, it suits industrial telecom applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,470 parts In-Stock

1+ parts

-

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8,470

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Digiode

USA . 1,211 parts In-Stock

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1,211

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,273 parts In-Stock

1+ parts

$7.559

100+ parts

$701.946

1k+ parts

$6.803

10k+ parts

-

1,273

$7.559

$701.946

$6.803

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DigiPath Technology Company

USA . 610 parts In-Stock

1+ parts

$8.323

100+ parts

$7.657

1k+ parts

-

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610

$8.323

$7.657

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ChromeModa Solutions

Germany . 5,145 parts In-Stock

1+ parts

$8.493

100+ parts

$6.964

1k+ parts

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5,145

$8.493

$6.964

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IDEA Electronic Components Group

UK . 1,601 parts In-Stock

1+ parts

$8.493

100+ parts

$8.068

1k+ parts

$7.644

10k+ parts

-

1,601

$8.493

$8.068

$7.644

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AZTECH Wire

Italy . 568 parts In-Stock

1+ parts

$12.537

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568

$12.537

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One Stop Electronics

USA . 529 parts In-Stock

1+ parts

$574.000

100+ parts

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529

$574.000

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QUARKTWIN TECHNOLOGY LTD

USA . 24,086 parts In-Stock

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24,086

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Corphita

USA . 2,985 parts In-Stock

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2,985

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Overview

Upgrade your cellphone performance with the HPA01083RGVR by Texas Instruments. Crafted with precision and expertise, this Cellphone IC offers unparalleled quality and reliability. Perfect for RF and baseband circuits, this product is designed to enhance communication efficiency. With a compact square package and a temperature grade suitable for industrial use, this IC delivers optimal functionality in a wide range of applications. Trust Texas Instruments for cutting-edge technology and experience the difference in your device's performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic and epoxy materials are durable and lightweight, making the product suitable for portable devices.

Surface Mount: YES

Surface mount technology allows for easy and efficient assembly, reducing manufacturing costs.

Package Shape: SQUARE

Square package shape provides better space utilization and compact design for the overall product.

No. of Terminals: 16

Having 16 terminals allows for more connectivity options and functionalities in the device.

Maximum Operating Temperature: 85 °C

High maximum operating temperature ensures optimal performance even in demanding environmental conditions.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature ensures the device can function in extreme cold conditions.

Terminal Finish: NICKEL PALLADIUM GOLD

Nickel palladium gold terminal finish ensures good conductivity and corrosion resistance for long-lasting performance.

Terminal Position: QUAD

Quad terminal position allows for efficient routing and connection of multiple signals within the device.

Temperature Grade: INDUSTRIAL

Industrial temperature grade ensures reliable operation in a wide range of temperature environments typically found in industrial applications.

Nominal Supply Voltage: 3 V

A 3V nominal supply voltage is commonly used in mobile devices, ensuring compatibility and efficient power consumption.

Technical Specifications

Cellphone ICs HPA01083RGVR attributes and parameters. Explore more Cellphone ICs devices from Texas Instruments

Specs

JESD-30 Code:

S-PQCC-N16

JESD-609 Code:

e4

Length:

4 mm

Moisture Sensitivity Level (MSL):

2

No. of Functions:

1

No. of Terminals:

16

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1 mm

Nominal Supply Voltage:

3 V

Surface Mount:

YES

Telecom IC Type:

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

4 mm

Trade Compliance

HPA01083RGVR Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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