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HPA00452RSTR

Texas Instruments

HPA00452RSTR by Texas Instruments

Texas Instruments' HPA00452RSTR is a Cellphone IC with 16 terminals in a square chip carrier package. Operating b/w -40 to 85°C, it features RF and baseband circuit technology, NO LEAD terminal form, and 3V supply voltage. Ideal for telecom applications requiring a compact design with high performance.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,902 parts In-Stock

1+ parts

-

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3,902

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Vyrian

USA . 2,216 parts In-Stock

1+ parts

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2,216

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 140 parts In-Stock

1+ parts

$14.763

100+ parts

-

1k+ parts

$15.201

10k+ parts

-

140

$14.763

-

$15.201

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AZTECH Wire

Italy . 317 parts In-Stock

1+ parts

$15.224

100+ parts

-

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317

$15.224

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DigiPath Technology Company

USA . 359 parts In-Stock

1+ parts

$16.256

100+ parts

$14.956

1k+ parts

-

10k+ parts

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359

$16.256

$14.956

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IDEA Electronic Components Group

UK . 2,241 parts In-Stock

1+ parts

$16.588

100+ parts

$15.759

1k+ parts

$14.929

10k+ parts

-

2,241

$16.588

$15.759

$14.929

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ChromeModa Solutions

Germany . 1,266 parts In-Stock

1+ parts

$16.588

100+ parts

$13.602

1k+ parts

-

10k+ parts

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1,266

$16.588

$13.602

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Semicontronic

India . 783 parts In-Stock

1+ parts

$157.000

100+ parts

$153.075

1k+ parts

$152.290

10k+ parts

-

783

$157.000

$153.075

$152.290

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Ampacity Inc.

Singapore . 1,345 parts In-Stock

1+ parts

$851.000

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1,345

$851.000

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One Stop Electronics

USA . 854 parts In-Stock

1+ parts

$984.000

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854

$984.000

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Corphita

USA . 3,284 parts In-Stock

1+ parts

-

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3,284

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Corohmni

South Africa . 164 parts In-Stock

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164

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Overview

Enhance your cellphone's performance with the HPA00452RSTR by Texas Instruments. Crafted with precision and expertise, this Cellphone IC offers unparalleled quality and reliability. Ideal for RF and baseband circuits, this product ensures seamless communication and optimal signal processing. Experience the value of cutting-edge technology and innovation with Texas Instruments, a trusted manufacturer in the industry. Upgrade your device today with the HPA00452RSTR and witness the difference in performance and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and can withstand various environmental conditions, making this product long-lasting and reliable.

Surface Mount: YES

Surface mount capability allows for easy installation and integration into circuit boards, saving time and effort during assembly.

Package Shape: SQUARE

Square package shape ensures efficient use of space on the circuit board, optimizing the overall design and layout.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this product can perform reliably even under demanding conditions, suitable for various applications.

Nominal Supply Voltage: 3 V

Low nominal supply voltage helps in reducing power consumption, making this product energy-efficient and cost-effective.

Technical Specifications

Cellphone ICs HPA00452RSTR attributes and parameters. Explore more Cellphone ICs devices from Texas Instruments

Specs

JESD-30 Code:

S-PQCC-N16

JESD-609 Code:

e4

Length:

4 mm

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

16

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC16,.16SQ,25

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Maximum Seated Height:

.95 mm

Nominal Supply Voltage:

3 V

Surface Mount:

YES

Technology:

CMOS

Telecom IC Type:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

4 mm

Trade Compliance

HPA00452RSTR Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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