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AFE7921IABJ

Texas Instruments

AFE7921IABJ by Texas Instruments

AFE7921IABJ by Texas Instruments is a Cellphone IC with 400 terminals in a GRID ARRAY, FINE PITCH package. It operates b/w -40 to 85°C, suitable for industrial use. This RF and baseband circuit has a compact size of 17x17 mm and is surface mountable.

Median Price

$1,780.900

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 5,589 parts In-Stock

1+ parts

$1,780.900

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5,589

$1,780.900

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Distributors (In-Stock)

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Digiode

USA . 707 parts In-Stock

1+ parts

$1,691.855

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707

$1,691.855

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Vyrian

USA . 8,370 parts In-Stock

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8,370

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EPE Components Inc.

USA . 28 parts In-Stock

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28

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Bristol Electronics

USA . 28 parts In-Stock

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28

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 562 parts In-Stock

1+ parts

$5.516

100+ parts

-

1k+ parts

$6.266

10k+ parts

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562

$5.516

-

$6.266

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DigiPath Technology Company

USA . 50 parts In-Stock

1+ parts

$6.074

100+ parts

$5.588

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-

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50

$6.074

$5.588

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ChromeModa Solutions

Germany . 6,962 parts In-Stock

1+ parts

$6.198

100+ parts

$5.082

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6,962

$6.198

$5.082

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IDEA Electronic Components Group

UK . 379 parts In-Stock

1+ parts

$6.198

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$5.578

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379

$6.198

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$5.578

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AZTECH Wire

Italy . 417 parts In-Stock

1+ parts

$19.630

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417

$19.630

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Corphita

USA . 1,861 parts In-Stock

1+ parts

$1,602.810

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1,861

$1,602.810

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Northwest PG Solutions

USA . 1,434 parts In-Stock

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1,434

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Native Components

USA . 888 parts In-Stock

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888

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Overview

Experience top-notch quality and reliability with the AFE7921IABJ by Texas Instruments, a leading manufacturer in the industry. This versatile Cellphone IC is designed for peak performance and efficiency, making it ideal for a wide range of applications. With its advanced features and innovative technology, this product offers unmatched value, benefits, and advantages to customers looking for superior performance in their electronic devices. Trust Texas Instruments to deliver excellence with the AFE7921IABJ.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides good thermal and electrical insulation, ensuring reliable performance of the cellphone ICs.

Surface Mount: YES

Surface mount technology allows for efficient and compact placement of the ICs, saving space inside the cellphone.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, these ICs can withstand high temperatures, making them suitable for various environments.

Terminal Finish: TIN SILVER COPPER

The use of Tin, Silver, and Copper for terminal finish ensures good conductivity and corrosion resistance, enhancing the overall reliability of the ICs.

Telecom IC Type: RF AND BASEBAND CIRCUIT

Being designed for RF and Baseband circuits, these ICs are optimized for communication functions in cellphones, providing high performance in signal processing.

Technical Specifications

Cellphone ICs AFE7921IABJ attributes and parameters. Explore more Cellphone ICs devices from Texas Instruments

Specs

Additional Features:

RF frequency(Min)(MHz) is 600; RF frequency(Max)(MHz) is 6000

JESD-30 Code:

S-PBGA-B400

JESD-609 Code:

e1

Length:

17 mm

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

400

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA400,20X20,32

Package Shape:

Package Style (Meter):

GRID ARRAY, FINE PITCH

Peak Reflow Temperature (C):

260

Maximum Seated Height:

2.65 mm

Surface Mount:

YES

Telecom IC Type:

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

17 mm

Trade Compliance

AFE7921IABJ Telecommunications trade compliance attributes, and parameters.

ECCN

5A991.B

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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