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TRF3762-EIRHARG4

Texas Instruments

TRF3762-EIRHARG4 by Texas Instruments

TRF3762-EIRHARG4 by Texas Instruments is a cellphone IC with 40 terminals, operating at -40 to 85°C. It features a supply voltage of 5V, RF and baseband circuit for telecom applications, and terminal pitch of 0.5mm. The package style is chip carrier with heat sink/slug in a square shape, suitable for industrial use.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,594 parts In-Stock

1+ parts

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6,594

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Digiode

USA . 687 parts In-Stock

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687

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 2,057 parts In-Stock

1+ parts

$5.497

100+ parts

-

1k+ parts

$6.236

10k+ parts

-

2,057

$5.497

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$6.236

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IDEA Electronic Components Group

UK . 2,378 parts In-Stock

1+ parts

$6.176

100+ parts

-

1k+ parts

$5.558

10k+ parts

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2,378

$6.176

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$5.558

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ChromeModa Solutions

Germany . 1,366 parts In-Stock

1+ parts

$6.176

100+ parts

$5.064

1k+ parts

-

10k+ parts

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1,366

$6.176

$5.064

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AZTECH Wire

Italy . 435 parts In-Stock

1+ parts

$7.821

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435

$7.821

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One Stop Electronics

USA . 175 parts In-Stock

1+ parts

$34.000

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175

$34.000

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Corphita

USA . 3,292 parts In-Stock

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3,292

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DigiPath Technology Company

USA . 375 parts In-Stock

1+ parts

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100+ parts

$5.568

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375

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$5.568

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Overview

Enhance the performance of your cellphone with the TRF3762-EIRHARG4 by Texas Instruments. Crafted with precision and expertise, this high-quality IC offers unparalleled reliability and efficiency. Ideal for various applications in the telecommunications industry, this product delivers exceptional value to customers seeking top-notch performance and seamless connectivity. Trust Texas Instruments to provide cutting-edge solutions that elevate your user experience. Experience the difference with the TRF3762-EIRHARG4.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and cost-effective.

Surface Mount: YES

Surface mount technology allows for easy and efficient assembly onto circuit boards.

Power Supplies (V): 5

Operating at 5V ensures compatibility with standard power sources and circuits.

No. of Terminals: 40

Having 40 terminals provides ample connectivity options for various functions and features.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, the product can withstand demanding conditions without malfunctioning.

Terminal Finish: NICKEL PALLADIUM GOLD

The use of nickel palladium gold finish ensures reliable electrical connections and corrosion resistance.

Maximum Seated Height: 1 mm

The low seated height allows for compact design and space-saving installation.

Telecom IC Type: RF AND BASEBAND CIRCUIT

The integration of RF and baseband circuits in one IC simplifies the design and enhances communication capabilities.

Nominal Supply Voltage: 5 V

Operating at 5V ensures compatibility with standard power sources and circuits.

Technical Specifications

Cellphone ICs TRF3762-EIRHARG4 attributes and parameters. Explore more Cellphone ICs devices from Texas Instruments

Specs

JESD-30 Code:

S-PQCC-N40

JESD-609 Code:

e4

Length:

6 mm

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

40

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC40,.24SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Sub-Category:

Other Telecom ICs

Maximum Supply Current:

.15 mA

Nominal Supply Voltage:

5 V

Surface Mount:

YES

Telecom IC Type:

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

6 mm

Trade Compliance

TRF3762-EIRHARG4 Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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