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AFE7920IABJ

Texas Instruments

AFE7920IABJ by Texas Instruments

AFE7920IABJ by Texas Instruments is a Cellphone IC with 400 terminals in a square grid array package. It operates b/w -40 to 85°C, suitable for industrial use. This RF and baseband circuit has a terminal pitch of 0.8mm and measures 17x17mm, making it ideal for cellphone applications.

Median Price

$1,980.000

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 60,382 parts In-Stock

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$1,980.000

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Digiode

USA . 4,532 parts In-Stock

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$1,881.000

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4,532

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Vyrian

USA . 5,936 parts In-Stock

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5,936

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Chip Stock

USA . 375 parts In-Stock

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375

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Conversion2

USA . 20 parts In-Stock

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20

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Distributors (Availability)

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Parana Technologies

USA . 1,867 parts In-Stock

1+ parts

$15.510

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$15.885

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1,867

$15.510

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$15.885

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AZTECH Wire

Italy . 1,108 parts In-Stock

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$16.660

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DigiPath Technology Company

USA . 200 parts In-Stock

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$17.078

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$15.712

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200

$17.078

$15.712

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ChromeModa Solutions

Germany . 6,050 parts In-Stock

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$17.427

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$14.290

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$17.427

$14.290

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IDEA Electronic Components Group

UK . 1,776 parts In-Stock

1+ parts

$17.427

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$16.556

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$15.684

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1,776

$17.427

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$15.684

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Corphita

USA . 2,699 parts In-Stock

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$1,782.000

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2,699

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Component Stockers USA

USA . 89,597 parts In-Stock

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$2,105.240

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$2,105.240

89,597

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$2,105.240

Northwest PG Solutions

USA . 809 parts In-Stock

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809

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Native Components

USA . 523 parts In-Stock

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523

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Futuretech Components

Singapore . 430 parts In-Stock

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430

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Overview

Enhance the performance of your cellphone with the AFE7920IABJ from Texas Instruments. Designed with precision and reliability in mind, this advanced RF and baseband circuit IC offers unparalleled quality and durability. With a wide range of applications in the telecommunications industry, this innovative product ensures superior functionality and seamless integration. Trust Texas Instruments to deliver cutting-edge technology that exceeds expectations. Elevate your mobile experience with the AFE7920IABJ today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and reliability of the product, making it a good choice for long-term usage.

Surface Mount: YES

Surface mount technology allows for compact and space-saving designs, making this product suitable for smaller and sleek cellphones.

No. of Terminals: 400

The high number of terminals allows for a greater degree of interconnectivity and functionality within the cellphone IC, enhancing its performance.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this product can withstand rigorous usage conditions and maintain optimal performance.

Temperature Grade: INDUSTRIAL

The industrial temperature grade ensures that the IC can operate in challenging environments, making it suitable for a wide range of applications.

Technical Specifications

Cellphone ICs AFE7920IABJ attributes and parameters. Explore more Cellphone ICs devices from Texas Instruments

Specs

Additional Features:

RF frequency(Min)(MHz) is 600; RF frequency(Max)(MHz) is 6000

JESD-30 Code:

S-PBGA-B400

JESD-609 Code:

e1

Length:

17 mm

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

400

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA400,20X20,32

Package Shape:

Package Style (Meter):

GRID ARRAY, FINE PITCH

Peak Reflow Temperature (C):

260

Maximum Seated Height:

2.65 mm

Surface Mount:

YES

Telecom IC Type:

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

17 mm

Trade Compliance

AFE7920IABJ Telecommunications trade compliance attributes, and parameters.

ECCN

5A991.B

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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