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TRF372017IRGZR

Texas Instruments

TRF372017IRGZR by Texas Instruments

TRF372017IRGZR by Texas Instruments is a cellphone IC with 48 terminals, operating at -40 to 85°C. It features power supplies of 3.3V and 5V, suitable for RF and baseband circuits in telecom applications. The package style includes chip carrier and very thin profile, making it ideal for compact designs.

Median Price

$8.838

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 18,772 parts In-Stock

1+ parts

$8.838

100+ parts

$7.720

1k+ parts

$5.324

10k+ parts

-

18,772

$8.838

$7.720

$5.324

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,329 parts In-Stock

1+ parts

$8.396

100+ parts

-

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-

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2,329

$8.396

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Vyrian

USA . 4,667 parts In-Stock

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-

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4,667

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NexGen Digital

USA . 9 parts In-Stock

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9

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,661 parts In-Stock

1+ parts

$7.954

100+ parts

-

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2,661

$7.954

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Parana Technologies

USA . 2,001 parts In-Stock

1+ parts

$9.238

100+ parts

-

1k+ parts

$9.876

10k+ parts

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2,001

$9.238

-

$9.876

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AZTECH Wire

Italy . 835 parts In-Stock

1+ parts

$9.620

100+ parts

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835

$9.620

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DigiPath Technology Company

USA . 1,127 parts In-Stock

1+ parts

$10.172

100+ parts

$9.359

1k+ parts

-

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1,127

$10.172

$9.359

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ChromeModa Solutions

Germany . 422 parts In-Stock

1+ parts

$10.380

100+ parts

$8.512

1k+ parts

-

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422

$10.380

$8.512

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IDEA Electronic Components Group

UK . 70 parts In-Stock

1+ parts

$10.380

100+ parts

$9.861

1k+ parts

$9.342

10k+ parts

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70

$10.380

$9.861

$9.342

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Authorized Procurement Solutions

USA . 480,000 parts In-Stock

1+ parts

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480,000

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QUARKTWIN TECHNOLOGY LTD

USA . 29,119 parts In-Stock

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29,119

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A-Z Elektronik GmbH

Germany . 5,466 parts In-Stock

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5,466

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Metaverse IC Inc.

Canada . 3,500 parts In-Stock

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3,500

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Kepictronics

USA . 3,000 parts In-Stock

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3,000

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Overview

Enhance the performance of your cellphone with the TRF372017IRGZR by Texas Instruments. This high-quality IC boasts reliable manufacturing from Texas Instruments, ensuring top-notch functionality. Ideal for RF and baseband circuits, this versatile component offers customers unmatched value and benefits. Upgrade your device today and experience the exceptional advantages that the TRF372017IRGZR provides in terms of efficiency and reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material provides good durability and protection for the IC, making it suitable for various applications.

Surface Mount: YES

Being surface mountable allows for easier and more efficient assembly processes, making it convenient for mass production.

Power Supplies (V): 3.3,5

Supporting multiple power supply voltages gives flexibility in design and compatibility with different systems.

No. of Terminals: 48

Having a high number of terminals allows for more connections and functionalities, enabling complex circuit designs.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, the IC can perform reliably in various environments and conditions.

Terminal Finish: NICKEL PALLADIUM GOLD SILVER

The use of high-quality terminal finishes ensures good conductivity and resistance to corrosion, improving the overall reliability of the IC.

Telecom IC Type: RF AND BASEBAND CIRCUIT

Being designed specifically for RF and baseband circuit applications, this IC is optimized for telecommunications use, ensuring high performance in such scenarios.

Nominal Supply Voltage: 3.3 V

Having a stable nominal supply voltage makes integration into existing systems easier and ensures compatibility with common power sources.

Technical Specifications

Cellphone ICs TRF372017IRGZR attributes and parameters. Explore more Cellphone ICs devices from Texas Instruments

Specs

JESD-30 Code:

S-PQCC-N48

JESD-609 Code:

e4

Length:

7 mm

Moisture Sensitivity Level (MSL):

2

No. of Functions:

1

No. of Terminals:

48

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC48,.27SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3,5

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Sub-Category:

Other Telecom ICs

Maximum Supply Current:

.25 mA

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Telecom IC Type:

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD SILVER

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

7 mm

Trade Compliance

TRF372017IRGZR Telecommunications trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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