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CC1151TRHBRG4Q1

Texas Instruments

CC1151TRHBRG4Q1 by Texas Instruments

CC1151TRHBRG4Q1 by Texas Instruments is a cellphone IC with 32 terminals, operating at -40 to 105°C. It features a supply voltage of 3V, data rate of 0.25 Mbps, and RF/baseband circuit for telecom applications. This chip carrier has a very thin profile, nickel palladium gold finish, and AEC-Q100 screening level.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,304 parts In-Stock

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Digiode

USA . 1,664 parts In-Stock

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1,664

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Distributors (Availability)

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AZTECH Wire

Italy . 674 parts In-Stock

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$6.948

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674

$6.948

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Parana Technologies

USA . 1,773 parts In-Stock

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$12.412

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$12.850

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$12.412

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$12.850

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DigiPath Technology Company

USA . 1,333 parts In-Stock

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$13.667

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$13.667

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ChromeModa Solutions

Germany . 1,764 parts In-Stock

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$13.946

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$11.436

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$13.946

$11.436

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IDEA Electronic Components Group

UK . 644 parts In-Stock

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$13.946

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$13.249

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$12.551

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644

$13.946

$13.249

$12.551

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Native Components

USA . 408 parts In-Stock

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$55.310

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$53.098

408

$55.310

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$53.098

Northwest PG Solutions

USA . 970 parts In-Stock

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$60.841

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One Stop Electronics

USA . 1,224 parts In-Stock

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$89.000

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Ampacity Inc.

Singapore . 296 parts In-Stock

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$148.000

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Semicontronic

India . 1,269 parts In-Stock

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$655.000

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$638.625

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$635.350

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$655.000

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$635.350

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Robosynatics

Brazil . 900 parts In-Stock

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$4.000

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$3.704

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$3.704

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$3.704

$3.704

Corohmni

South Africa . 242 parts In-Stock

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Corphita

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Overview

Elevate your cellphone technology with the CC1151TRHBRG4Q1 by Texas Instruments. As a trusted manufacturer in the industry, Texas Instruments delivers top-quality Cellphone ICs that are reliable and efficient. This RF and baseband circuit offers a data rate of 0.25 Mbps, ensuring seamless communication for your device. With a compact design and industrial-grade temperature range, this IC is ideal for a wide range of applications. Upgrade your product performance with the value and benefits that only Texas Instruments can provide.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the product lightweight and durable, ideal for mobile devices.

Surface Mount: YES

Being surface mountable allows for easy and efficient installation of the IC, saving assembly time and cost.

Screening Level: AEC-Q100

AEC-Q100 certification ensures high reliability and quality of the IC, making it suitable for automotive applications.

Power Supplies (V): 1.8/3.6

Supporting multiple power supply voltages provides versatility and compatibility with various systems and devices.

No. of Terminals: 32

Having 32 terminals allows for a higher level of connectivity and functionality in the IC.

Package Style (Meter): CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

The combination of chip carrier, heat sink/slug, and very thin profile design enhances thermal management and space efficiency.

Maximum Operating Temperature: 105 °C

With a high maximum operating temperature, the IC can perform reliably in demanding environments.

Minimum Operating Temperature: -40 °C

The wide range of operating temperatures ensures the IC can function in extreme cold conditions as well.

Terminal Finish: NICKEL PALLADIUM GOLD

Nickel palladium gold terminal finish provides excellent conductivity and corrosion resistance for long-term performance.

Terminal Position: QUAD

The quad terminal position allows for efficient and stable connections, improving overall reliability.

Maximum Seated Height: 1 mm

The low seated height of 1 mm makes the IC suitable for slim and compact device designs.

Width: 5 mm

Compact width of 5 mm contributes to space-saving layout designs in electronic assemblies.

Maximum Time At Peak Reflow Temperature (s): 30

Short reflow time of 30 seconds helps prevent overheating and damage during the assembly process.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260°C, the IC can withstand high-temperature soldering processes.

Length: 5 mm

The small length of 5 mm aids in compact and space-efficient PCB layouts.

Temperature Grade: INDUSTRIAL

Industrial-grade temperature rating ensures the IC can withstand harsh operating conditions in industrial applications.

Terminal Form: NO LEAD

Lead-free terminal form is environmentally friendly and complies with RoHS regulations.

Telecom IC Type: RF AND BASEBAND CIRCUIT

Combination of RF and baseband circuit types offers versatile capabilities for telecommunications and wireless applications.

Nominal Supply Voltage: 3 V

Stable 3V nominal supply voltage supports efficient and reliable operation of the IC.

Terminal Pitch: 0.5 mm

With a small terminal pitch of 0.5 mm, the IC enables high-density mounting and space-saving layouts.

Data Rate: 0.25 Mbps

With a data rate of 0.25 Mbps, the IC is suitable for medium-speed data processing tasks.

Moisture Sensitivity Level (MSL): 2

MSL 2 indicates moderate sensitivity to moisture, requiring standard handling procedures during storage and assembly.

Technical Specifications

Cellphone ICs CC1151TRHBRG4Q1 attributes and parameters. Explore more Cellphone ICs devices from Texas Instruments

Specs

Data Rate:

.25 Mbps

JESD-30 Code:

S-PQCC-N32

JESD-609 Code:

e4

Length:

5 mm

Moisture Sensitivity Level (MSL):

2

No. of Functions:

1

No. of Terminals:

32

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC32,.2SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.8/3.6

Qualification:

Not Qualified

Screening Level:

AEC-Q100

Maximum Seated Height:

1 mm

Sub-Category:

Other Telecom ICs

Nominal Supply Voltage:

3 V

Surface Mount:

YES

Telecom IC Type:

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

5 mm

Trade Compliance

CC1151TRHBRG4Q1 Telecommunications trade compliance attributes, and parameters.

ECCN

5A991.G

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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