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CC1101TRHBRG4Q1

Texas Instruments

CC1101TRHBRG4Q1 by Texas Instruments

CC1101TRHBRG4Q1 by Texas Instruments is a cellphone IC with 32 terminals, operating at -40 to 105°C. It features a supply voltage of 3V, RF and baseband circuitry for telecom applications, and AEC-Q100 screening level for industrial use.

Median Price

$4.210

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 51 parts In-Stock

1+ parts

-

100+ parts

$4.210

1k+ parts

$3.770

10k+ parts

$3.540

51

-

$4.210

$3.770

$3.540

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,402 parts In-Stock

1+ parts

$4.446

100+ parts

-

1k+ parts

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10k+ parts

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3,402

$4.446

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Vyrian

USA . 6,420 parts In-Stock

1+ parts

-

100+ parts

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6,420

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 125 parts In-Stock

1+ parts

$1.640

100+ parts

-

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125

$1.640

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-

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Northwest PG Solutions

USA . 2,264 parts In-Stock

1+ parts

$1.804

100+ parts

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2,264

$1.804

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Corphita

USA . 1,771 parts In-Stock

1+ parts

$4.212

100+ parts

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1,771

$4.212

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-

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Parana Technologies

USA . 1,347 parts In-Stock

1+ parts

$8.083

100+ parts

-

1k+ parts

$8.670

10k+ parts

-

1,347

$8.083

-

$8.670

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DigiPath Technology Company

USA . 414 parts In-Stock

1+ parts

$8.900

100+ parts

$8.188

1k+ parts

-

10k+ parts

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414

$8.900

$8.188

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ChromeModa Solutions

Germany . 520 parts In-Stock

1+ parts

$9.082

100+ parts

$7.447

1k+ parts

-

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520

$9.082

$7.447

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IDEA Electronic Components Group

UK . 333 parts In-Stock

1+ parts

$9.082

100+ parts

$8.628

1k+ parts

$8.174

10k+ parts

-

333

$9.082

$8.628

$8.174

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AZTECH Wire

Italy . 817 parts In-Stock

1+ parts

$16.280

100+ parts

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817

$16.280

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Perfect Parts

USA . 3,483 parts In-Stock

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3,483

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Overview

Upgrade your cellphone experience with the CC1101TRHBRG4Q1 by Texas Instruments, a top-of-the-line Cellphone IC that offers unmatched quality and reliability. Made by a trusted manufacturer, this chip delivers outstanding performance in various applications. With its advanced features and cutting-edge technology, this product ensures seamless communication and enhanced functionality for your device. Trust Texas Instruments to provide you with the best-in-class solutions for all your cellphone needs. Elevate your user experience today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a lightweight and durable package for the cellphone IC, making it ideal for portable devices.

Surface Mount: YES

Allows for easy and efficient assembly onto circuit boards, saving time and reducing production costs.

Screening Level: AEC-Q100

Ensures high reliability and quality for automotive applications, where stringent standards are required.

Power Supplies (V): 1.8/3.6

Supports a wide range of power supply voltages, making it versatile for various applications.

No. of Terminals: 32

Provides ample connectivity options for integrating the IC into complex circuit designs.

Package Style (Meter): CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Offers a compact and efficient design for space-constrained mobile devices.

Maximum Operating Temperature: 105 °C

Ensures reliable performance even in high-temperature environments, enhancing the IC's durability.

Minimum Operating Temperature: -40 °C

Allows the IC to function in extreme cold conditions, increasing its usability in various settings.

Terminal Finish: NICKEL PALLADIUM GOLD

Provides excellent corrosion resistance and conductivity for long-lasting performance.

Terminal Position: QUAD

Enables easy soldering and connection to the circuit board, simplifying the assembly process.

Width: 5 mm

Compact width facilitates space-saving integration into slim and sleek mobile devices.

Peak Reflow Temperature °C: 260

Withstands high-temperature reflow processes during manufacturing, ensuring quality solder joints.

Temperature Grade: INDUSTRIAL

Suitable for industrial applications requiring robust performance and reliability.

Terminal Form: NO LEAD

Environmentally friendly lead-free terminal form complies with RoHS regulations.

Telecom IC Type: RF AND BASEBAND CIRCUIT

Combines RF and baseband functions in a single IC, reducing component count and optimizing performance.

Nominal Supply Voltage: 3 V

Operates efficiently at a common supply voltage, promoting compatibility with standard power sources.

Terminal Pitch: 0.5 mm

Fine pitch spacing allows for high-density mounting and connectivity in space-constrained designs.

Moisture Sensitivity Level (MSL): 2

Indicates resistance to moisture damage during storage and handling, ensuring product reliability.

Technical Specifications

Cellphone ICs CC1101TRHBRG4Q1 attributes and parameters. Explore more Cellphone ICs devices from Texas Instruments

Specs

JESD-30 Code:

S-PQCC-N32

JESD-609 Code:

e4

Length:

5 mm

Moisture Sensitivity Level (MSL):

2

No. of Functions:

1

No. of Terminals:

32

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC32,.2SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.8/3.6

Qualification:

Not Qualified

Screening Level:

AEC-Q100

Maximum Seated Height:

1 mm

Sub-Category:

Other Telecom ICs

Nominal Supply Voltage:

3 V

Surface Mount:

YES

Telecom IC Type:

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

5 mm

Trade Compliance

CC1101TRHBRG4Q1 Telecommunications trade compliance attributes, and parameters.

ECCN

5A991.G

ECCN Governance

EAR

HTS

8542.39.00.01

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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