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TRF4900PWG4

Texas Instruments

TRF4900PWG4 by Texas Instruments

TRF4900PWG4 by Texas Instruments is a cellphone IC with 24 terminals, operating at 0-70°C. It features a supply voltage of 2.5/3.3V and CMOS technology for RF and baseband circuits. The package is small outline, thin profile, with shrink pitch, suitable for telecom applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,352 parts In-Stock

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Digiode

USA . 4,841 parts In-Stock

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4,841

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Distributors (Availability)

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Advanced Electronics

New Zealand . 2,000 parts In-Stock

1+ parts

$13.506

100+ parts

$12.290

1k+ parts

$11.075

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-

2,000

$13.506

$12.290

$11.075

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AZTECH Wire

Italy . 676 parts In-Stock

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$13.508

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676

$13.508

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Parana Technologies

USA . 904 parts In-Stock

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$13.992

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$1,299.341

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$12.593

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904

$13.992

$1,299.341

$12.593

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DigiPath Technology Company

USA . 200 parts In-Stock

1+ parts

$15.407

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200

$15.407

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ChromeModa Solutions

Germany . 6,064 parts In-Stock

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$15.721

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$12.891

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6,064

$15.721

$12.891

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IDEA Electronic Components Group

UK . 1,238 parts In-Stock

1+ parts

$15.721

100+ parts

$14.935

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$14.149

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1,238

$15.721

$14.935

$14.149

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Semicontronic

India . 731 parts In-Stock

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$108.000

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$105.300

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$104.760

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731

$108.000

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$104.760

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One Stop Electronics

USA . 126 parts In-Stock

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$218.000

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126

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Corohmni

South Africa . 320 parts In-Stock

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320

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Corphita

USA . 206 parts In-Stock

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Overview

Experience cutting-edge technology with the TRF4900PWG4 by Texas Instruments, a leading manufacturer in the industry. This innovative cellphone IC offers unparalleled performance and reliability, making it the ideal choice for a wide range of applications. With a focus on quality and precision, this product delivers exceptional value, benefits, and advantages to customers seeking top-notch communication solutions. Upgrade your devices with the TRF4900PWG4 and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides good protection for the internal components of the IC, ensuring durability and reliability.

Surface Mount: YES

Being surface mountable makes the IC easier to assemble onto circuit boards, saving time and effort during manufacturing.

Power Supplies (V): 2.5/3.3

The dual power supply options of 2.5V and 3.3V provide flexibility in designing and operating the cellphone IC in various voltage environments.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient use of space on the circuit board, optimizing the layout and overall design of the device.

No. of Terminals: 24

Having 24 terminals enables the IC to connect to multiple external components and interfaces, expanding the functionality of the cellphone.

Maximum Operating Temperature: 70 °C

With a high maximum operating temperature of 70°C, the IC can perform reliably even in demanding thermal conditions.

Minimum Operating Temperature: 0 °C

The IC can operate effectively at low temperatures down to 0°C, ensuring usability in a wide range of environmental conditions.

Terminal Position: DUAL

The dual terminal position provides flexibility in circuit board layout and connection options for different system designs.

Maximum Seated Height: 1.2 mm

The low maximum seated height of 1.2mm allows for a compact overall design of the cellphone, saving space and enabling sleek device profiles.

Width: 4.4 mm

The small width of 4.4mm contributes to the compact size of the IC, making it suitable for mobile devices where space is a premium.

Length: 7.8 mm

The short length of 7.8mm further enhances the compact form factor of the IC, facilitating integration into slim and portable cellphone designs.

Temperature Grade: COMMERCIAL

Designed for commercial use, this cellphone IC meets industry standards for performance and reliability in typical operating environments.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the IC energy-efficient and reliable for cellphone applications.

Terminal Form: GULL WING

The gull wing terminal form provides secure connections and ease of soldering during assembly, ensuring robust electrical connections in the cellphone.

Telecom IC Type: RF AND BASEBAND CIRCUIT

Combining RF and baseband circuitry in one IC simplifies the design and integration of cellphone communication functions, leading to cost-effective solutions.

Nominal Supply Voltage: 3 V

The 3V nominal supply voltage is commonly used in mobile devices, ensuring compatibility and optimized performance for the cellphone application.

Terminal Pitch: 0.65 mm

With a small terminal pitch of 0.65mm, the IC allows for high-density mounting and efficient use of space on the circuit board, enhancing design flexibility.

Technical Specifications

Cellphone ICs TRF4900PWG4 attributes and parameters. Explore more Cellphone ICs devices from Texas Instruments

Specs

JESD-30 Code:

R-PDSO-G24

Length:

7.8 mm

No. of Functions:

1

No. of Terminals:

24

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP24,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

2.5/3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sub-Category:

Other Telecom ICs

Nominal Supply Voltage:

3 V

Surface Mount:

YES

Technology:

CMOS

Telecom IC Type:

Temperature Grade:

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

4.4 mm

Trade Compliance

TRF4900PWG4 Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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