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CC1070RGWT

Texas Instruments

CC1070RGWT by Texas Instruments

CC1070RGWT by Texas Instruments is a cellphone IC with 20 terminals in a square chip carrier package. It operates at temperatures ranging from -40 to 105°C, suitable for industrial use. This RF and baseband circuit has a supply voltage of 3V and terminal pitch of 0.635mm, making it ideal for telecom applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,224 parts In-Stock

1+ parts

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5,224

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Digiode

USA . 283 parts In-Stock

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283

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 7 parts In-Stock

1+ parts

$0.279

100+ parts

-

1k+ parts

-

10k+ parts

$0.268

7

$0.279

-

-

$0.268

Northwest PG Solutions

USA . 1,238 parts In-Stock

1+ parts

$0.307

100+ parts

-

1k+ parts

-

10k+ parts

$0.271

1,238

$0.307

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-

$0.271

Parana Technologies

USA . 960 parts In-Stock

1+ parts

$5.717

100+ parts

$530.944

1k+ parts

$5.146

10k+ parts

-

960

$5.717

$530.944

$5.146

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DigiPath Technology Company

USA . 2,017 parts In-Stock

1+ parts

$6.296

100+ parts

-

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2,017

$6.296

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ChromeModa Solutions

Germany . 6,552 parts In-Stock

1+ parts

$6.424

100+ parts

$5.268

1k+ parts

-

10k+ parts

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6,552

$6.424

$5.268

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IDEA Electronic Components Group

UK . 2,078 parts In-Stock

1+ parts

$6.424

100+ parts

-

1k+ parts

$5.782

10k+ parts

-

2,078

$6.424

-

$5.782

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Advanced Electronics

New Zealand . 60 parts In-Stock

1+ parts

$15.859

100+ parts

$14.432

1k+ parts

$13.004

10k+ parts

-

60

$15.859

$14.432

$13.004

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AZTECH Wire

Italy . 883 parts In-Stock

1+ parts

$15.960

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883

$15.960

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Semicontronic

India . 1,424 parts In-Stock

1+ parts

$114.000

100+ parts

$111.150

1k+ parts

$110.580

10k+ parts

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1,424

$114.000

$111.150

$110.580

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One Stop Electronics

USA . 483 parts In-Stock

1+ parts

$793.000

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483

$793.000

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Corphita

USA . 1,483 parts In-Stock

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1,483

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Corohmni

South Africa . 75 parts In-Stock

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75

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Overview

Elevate your cellphone technology with the CC1070RGWT by Texas Instruments. Known for its top-notch quality and reliability, Texas Instruments delivers cutting-edge Cellphone ICs like no other. This Surface Mount square package houses a powerful RF and baseband circuit that operates at an industrial temperature grade. With a nominal supply voltage of 3V, this versatile chip carrier is perfect for a wide range of applications. Experience unmatched performance and value with the CC1070RGWT - the ultimate choice for your cellphone technology needs.

Feature Benefit Bullets

Surface Mount: YES

Surface mount technology allows for easy and efficient PCB assembly, making the product suitable for high-volume manufacturing.

Package Shape: SQUARE

The square shape provides efficient use of space on the PCB, allowing for a compact design.

Power Supplies (V): 2.5/3.3

Support for multiple power supply options gives flexibility in system design and integration.

No. of Terminals: 20

Having multiple terminals allows for connectivity to other components, enhancing the functionality of the product.

Package Style (Meter): CHIP CARRIER

The chip carrier package style offers good thermal performance and protection for the integrated circuit.

Maximum Operating Temperature: 105 °C

The high maximum operating temperature ensures the product can withstand extended use in various environments without overheating.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature allows the product to function reliably even in cold conditions.

Terminal Finish: NICKEL PALLADIUM GOLD

This terminal finish provides excellent corrosion resistance and ensures long-term reliability of the connections.

Terminal Position: QUAD

The quad terminal position offers enhanced stability and connectivity for the IC on the PCB.

Maximum Time At Peak Reflow Temperature (s): 30

The short reflow time helps in efficient and consistent soldering during the manufacturing process.

Peak Reflow Temperature °C: 260

The high peak reflow temperature allows for robust solder joints, ensuring durability of the product.

Temperature Grade: INDUSTRIAL

The industrial temperature grade confirms the reliability of the product in demanding operating conditions.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the product energy-efficient and reliable.

Terminal Form: NO LEAD

The no lead terminal form is environmentally friendly and complies with regulations, making the product sustainable.

Telecom IC Type: RF AND BASEBAND CIRCUIT

The RF and baseband circuit integration enables seamless communication, making the product ideal for cellphone applications.

Nominal Supply Voltage: 3 V

The 3V supply voltage is a common standard in many applications, ensuring compatibility and ease of integration.

Terminal Pitch: 0.635 mm

The small terminal pitch allows for high-density mounting and saves space on the PCB.

Moisture Sensitivity Level (MSL): 3

MSL 3 indicates moderate sensitivity to moisture, so proper handling and storage are required, but this level is acceptable for many applications.

Technical Specifications

Cellphone ICs CC1070RGWT attributes and parameters. Explore more Cellphone ICs devices from Texas Instruments

Specs

JESD-30 Code:

S-XQCC-N20

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

20

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

LCC20,.20SQ,25

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Power Supplies (V):

2.5/3.3

Qualification:

Not Qualified

Sub-Category:

Other Telecom ICs

Nominal Supply Voltage:

3 V

Surface Mount:

YES

Technology:

CMOS

Telecom IC Type:

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.635 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

CC1070RGWT Telecommunications trade compliance attributes, and parameters.

ECCN

5A991.G

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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