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TM124BBJ32F-60L

Texas Instruments

TM124BBJ32F-60L by Texas Instruments

TM124BBJ32F-60L by Texas Instruments is a 1MX32 DRAM module with 1048576 words and memory width of 32. Operating at 5V, it offers fast page access mode with a max access time of 60ns. Ideal for commercial applications requiring high-speed memory solutions.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,967 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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1,967

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Digiode

USA . 1,881 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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1,881

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,048 parts In-Stock

1+ parts

$4.300

100+ parts

-

1k+ parts

$4.726

10k+ parts

-

1,048

$4.300

-

$4.726

-

DigiPath Technology Company

USA . 47 parts In-Stock

1+ parts

$4.735

100+ parts

$4.357

1k+ parts

-

10k+ parts

-

47

$4.735

$4.357

-

-

IDEA Electronic Components Group

UK . 2,084 parts In-Stock

1+ parts

$4.832

100+ parts

-

1k+ parts

$4.349

10k+ parts

-

2,084

$4.832

-

$4.349

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ChromeModa Solutions

Germany . 338 parts In-Stock

1+ parts

$4.832

100+ parts

$3.962

1k+ parts

-

10k+ parts

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338

$4.832

$3.962

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One Stop Electronics

USA . 1,243 parts In-Stock

1+ parts

$5.000

100+ parts

-

1k+ parts

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10k+ parts

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1,243

$5.000

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AZTECH Wire

Italy . 230 parts In-Stock

1+ parts

$9.927

100+ parts

-

1k+ parts

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10k+ parts

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230

$9.927

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Corphita

USA . 3,752 parts In-Stock

1+ parts

-

100+ parts

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3,752

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Overview

Experience superior performance and reliability with the TM124BBJ32F-60L by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-quality DRAM modules for various applications. This fast page DRAM module offers unmatched value with its high memory density, fast access time, and wide operating temperature range. Whether you're designing consumer electronics, industrial equipment, or networking devices, this product provides the speed and efficiency you need. Upgrade your system with Texas Instruments today and elevate your performance to the next level.

Feature Benefit Bullets

Package Shape: RECTANGULAR

The rectangular package shape allows for easy integration and efficient use of space in electronic devices.

Operating Mode: ASYNCHRONOUS

Asynchronous operation enables faster data access and processing, making this product suitable for high-performance applications.

Nominal Supply Voltage (Vsup): 5V

The 5V supply voltage ensures reliable and stable performance in various operating conditions.

Organization: 1MX32

1MX32 organization provides a high memory capacity and data width, ideal for applications requiring large amounts of data storage and processing.

Technology: CMOS

CMOS technology offers low power consumption and high speed operation, making this product energy-efficient and reliable.

Memory Density: 33554432 bit

With a high memory density of 33554432 bits, this product can store large amounts of data efficiently.

Maximum Access Time: 60 ns

The maximum access time of 60 ns ensures quick retrieval of data, making this product suitable for high-speed computing applications.

Technical Specifications

DRAM TM124BBJ32F-60L attributes and parameters. Explore more DRAM devices from Texas Instruments

Specs

Access Mode:

FAST PAGE

Maximum Access Time:

60 ns

Additional Features:

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

JESD-30 Code:

R-XSMA-N72

Memory Density:

33554432 bit

Memory IC Type:

Memory Width:

32

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

72

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1MX32

Package Body Material:

UNSPECIFIED

Package Code:

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Qualification:

Not Qualified

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Position:

SINGLE

Trade Compliance

TM124BBJ32F-60L Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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