Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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DDR4 DRAM; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
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Nova Conductors
Corohmni
$2.693
Ampacity Inc.
$16.000
AZTECH Wire
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Continental Prestige Electronics
Argo Parts USA
Perfect Parts
Corphita
Bastille Electronics
DRAM MT53D1024M32D4DT-053AAT:DTR attributes and parameters. Explore more DRAM devices from Micron Technology
Memory IC Type:
Peak Reflow Temperature (C):
Maximum Time At Peak Reflow Temperature (s):
MT53D1024M32D4DT-053AAT:DTR Memory ICs trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Obsolescence/ EOL - MT53 1-31-23
PCN Design/Specification - Memory 24-May-2022
PCN Packaging - Standard Pkg Label Chg 20/Feb/2019
Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.
President, CEO
Sanjay Mehrotra
Executive VP, CFO
Mark J. Murphy
Executive VP, CBO
Sumit Sadana
Fab 4
Fabrication
Fab Initiation
1994
USA
Boise
Wafer Capacity
8,750
Fab 6
1997
Manassas
23,000
2006
28,000
Fab 11
2007
Taiwan
Taoyuan
34,000
Fab 16 A1
Taichung
50,000
Fab 16 A3
2021
3,000
Fab 15
2002
Japan
Hiroshima
98,000
2004
New Hiroshima DRAM Fab
2017
11,750
Fab 10W
2016
Singapore
20,000
Fab 10X
55,000
2019
18,000
Fab 10A
Fab 10N
2014
47,000
2000
32,000
2012
6,000
Fab 16 A2
2015
43,000
New Clay Fab Phase 1
2027
Clay
New Boise Fab 1
2025
Fab 16 A5
2028
Expansion Fab
2020
ABS07-32.768KHZ-T
Abracon
Abracon ABS07-32.768KHZ-T crystal oscillator offers 20 ppm frequency tolerance, 144% stability, and 70000 ohm series resistance. Ideal for applications requiring 0.032768 MHz frequency precision in a compact surface-mount design with gold over nickel finish.
1N4148
Microsemi
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
C1005X7R1E103K050BB
TDK
The TDK C1005X7R1E103K050BB is a ceramic capacitor with capacitance of 0.01uF and rated DC voltage of 25V. It features X7R temperature characteristics, -55 to 125°C operating range, and ±10% tolerance. Ideal for surface mount applications requiring compact size and stable performance in various electronic circuits.
C1206C104K5RACTU
KEMET Corporation
KEMET C1206C104K5RACTU is a ceramic capacitor with 0.1uF capacitance and 50V rated DC voltage. It has X7R temperature characteristics, -55 to 125 °C operating range, and ±10% tolerance. Ideal for SMT applications due to its rectangular package shape and wraparound terminals.
Itt Semiconductor
LM358MX
ROHM
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: LSOP; Package Shape: RECTANGULAR;
SS14
Silicon Standard
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
FT232RQ-REEL
FTDI
FTDI's FT232RQ-REEL is a USB bus controller with 32 terminals, operating at 3.3-5.25V. It supports data transfer rates up to 60MBps and clock frequency of 12.02MHz, suitable for RS232/RS422/RS485 interfaces in various applications like industrial automation and communication systems.
SN65HVD230DR
Texas Instruments
SN65HVD230DR by Texas Instruments is a BICMOS technology interface circuit with 1Mbps data rate, suitable for industrial applications. It operates at 3.3V, has 8 terminals in a small outline package, and can withstand temperatures from -40 to 85°C.
LM107H/883C
National Semiconductor
LM107H/883C by National Semiconductor is a MILITARY-grade Operational Amplifier with +-5/+-15V supplies. Featuring 2000uV max input offset voltage, it operates from -55 to 125 °C. Ideal for applications requiring VOLTAGE-FEEDBACK architecture and frequency compensation.
1554216002
Molex
WIRE AND CABLE;
2N2222A
Transistor & Electronic
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
ULN2803A
Vishay Intertechnology
NPN; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Package Body Material: PLASTIC/EPOXY; JESD-30 Code: R-PDIP-T18;
BAV99W-7-F
Diodes Incorporated
Diodes Incorporated BAV99W-7-F is a fast recovery rectifier diode with 2 elements in series connected, center tap configuration. It has a max reverse recovery time of 0.004 us and can handle a max output current of 0.15 A. Ideal for applications requiring fast switching capabilities and operating temperatures ranging from -65 to 150 °C.
LL4148
Secos
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
Rectron
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; JEDEC-95 Code: TO-92;
BAV99
Bkc Semiconductors
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
Motorola
NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Terminal Position: DUAL; JESD-30 Code: R-PDIP-T18;
M39029/56-351
Defense Logistics Agency
CONNECTOR ACCESSORY; MIL Conformity: YES; Contact Gender: FEMALE; Mating Contacts: M39029/58-363; Removal Tool Sources: MILITARY; Alternate Contact Sources: MILITARY;
MT48LC16M16A2P-6AAIT:G
Micron Technology
Micron Technology's MT48LC16M16A2P-6AAIT:G is a 16MX16 DRAM with 3.3V supply, operating at -40 to 85 °C. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring fast access times and high memory density in a compact small outline package.
MT48LC4M16A2P-6AAIT:J
Micron Technology's MT48LC4M16A2P-6AAIT:J is a 3.3V Synchronous DRAM with 4MX16 organization, operating at -40 to 85 °C. It features self-refresh mode, 5.5ns access time, and industrial temperature grade suitable for memory-intensive applications like networking equipment and industrial automation systems.
TC514400ASJL-70
Toshiba
Toshiba's TC514400ASJL-70 is a 1MX4 DRAM with 1048576 words, 4194304 bit memory density, and 70 ns max access time. Ideal for commercial applications requiring fast page access in a compact SMALL OUTLINE package with 20 terminals.
MT40A256M16LY-062EAAT:F
Micron Technology's MT40A256M16LY-062EAAT:F is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and reliability in harsh environments.
MT48LC32M16A2P-75IT:CTR
Micron Technology's MT48LC32M16A2P-75IT:CTR is a 32MX16 DRAM with 33554432 words, 16-bit memory width, and 536870912 bit memory density. It operates synchronously at -40 to 85 °C, suitable for industrial applications requiring fast access time of 5.4 ns.
IS42S16100C1-7TL
Integrated Silicon Solution
IS42S16100C1-7TL by Integrated Silicon Solution is a 1MX16 Synchronous DRAM with 3.3V supply, operating at 143MHz clock frequency. It features dual bank page burst access mode and supports sequential burst lengths of 1,2,4,8. Ideal for applications requiring high-speed memory solutions in commercial temperature grade environments.
MT53E256M16D1FW-046WT:B
LPDDR4 DRAM;
MT47H64M16HR-3:HTR
Micron Technology's MT47H64M16HR-3:HTR is a DDR2 DRAM with 64MX16 organization, operating at 1.8V. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for applications requiring high-speed memory performance in a compact grid array package.
MT48LC16M16A2P-6AXIT:GTR
Micron Technology's MT48LC16M16A2P-6AXIT:GTR is a 16MX16 Synchronous DRAM with 167 MHz clock frequency, 5.4 ns access time, and 8192 refresh cycles. Ideal for industrial applications requiring high-speed memory operations in a compact form factor.
MT40A1G8SA-062E:R
Micron Technology's MT40A1G8SA-062E:R is a DDR4 DRAM with 1.2V supply voltage, 1GX8 organization, and 1073741824 words capacity. It operates synchronously with self-refresh capability and common I/O type. Ideal for applications requiring high memory density and fast data access in thin profile devices.
IS42S32400F-6TLI
IS42S32400F-6TLI by Integrated Silicon Solution is a 4MX32 Synchronous DRAM with 166 MHz clock frequency. Operating at 3.3V, it offers 4096 refresh cycles and supports four bank page burst access mode. Ideal for industrial applications requiring high-speed memory performance in a compact package.
MT40A256M16HA-093E:A
Micron Technology's MT40A256M16HA-093E:A is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. This thin-profile memory module has a package style of grid array with fine pitch terminals, suitable for various applications requiring high-speed data processing in compact devices.
MT40A256M16LY-062EAUT:FTR
Micron Technology's MT40A256M16LY-062EAUT:FTR is a DDR4 DRAM with 256MX16 organization, operating at up to 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in automotive electronics due to AEC-Q100 screening level.
AS4C256M32MD4-062BAN
Alliance Memory
Alliance Memory's AS4C256M32MD4-062BAN is a 256MX32 LPDDR4 DRAM with 32-bit memory width and 8589934592-bit density. It operates b/w -40 to 105 °C, featuring multi-bank page burst access mode. Ideal for high-performance applications requiring fast data processing and storage capabilities.
MT40A512M16TB-062E:R
Micron Technology's MT40A512M16TB-062E:R is a DDR4 DRAM with 512MX16 organization, operating at up to 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in devices such as computers and servers.
IS42S16100H-7BL
IS42S16100H-7BL by Integrated Silicon Solution is a 1MX16 Synchronous DRAM with 3.3V supply, operating at up to 143MHz clock frequency. It features dual bank page burst access mode and offers a memory density of 16777216 bits. Ideal for applications requiring high-speed data storage and retrieval in commercial temperature environments.
MT48LC16M16A2P-6AIT:GTR
Micron Technology's MT48LC16M16A2P-6AIT:GTR is a 16MX16 DRAM with 16777216 words and 268435456 bit memory density. It operates at 3.3V, has a peak reflow temperature of 260°C, and supports industrial temperature grade applications. With synchronous operation and four bank page burst access mode, it is ideal for high-performance computing systems.
MT40A512M16JY-083EAAT:BTR
MT40A512M16JY-083EAAT:BTR by Micron Technology is a DDR4 DRAM with 512MX16 organization, operating at a max clock frequency of 1200.4 MHz. It is commonly used in automotive applications due to its AEC-Q100 screening level and wide temperature range (-40°C to 105°C).
M391T6553CZ3-CD5
Samsung
Samsung M391T6553CZ3-CD5 DDR DRAM Module has 64MX72 organization, operates at 267 MHz with 1.8V supply. Ideal for high-performance computing applications due to its synchronous operation and 72-bit memory width.
MT41J64M16JT-15:E
MT41J64M16JT-15:E by Micron Technology is a DDR3 DRAM with 64MX16 organization, 1.5V supply voltage, and 85°C max operating temp. Suitable for applications requiring synchronous operation, self-refresh capability, and multi-bank page burst access mode.
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MT53D512M32D2DS-053WT:D
Micron Technology's MT53D512M32D2DS-053WT:D is a LPDDR4 DRAM with 512MX32 organization, operating at 1.8V. It features a clock frequency of 1869.1 MHz, single bank page burst access mode, and common I/O type. Ideal for applications requiring high memory density and fast data processing in compact devices.
MT53E512M32D1ZW-046WT:B
Micron Technology's MT53E512M32D1ZW-046WT:B is a LPDDR4 DRAM with 512MX32 organization, operating at up to 2136.7 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in thin-profile devices.
MT53E128M32D2DS-053AUT:A
LPDDR4 DRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 200; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
MT53D512M32D2DS-053AIT:D
Micron Technology's MT53D512M32D2DS-053AIT:D is a LPDDR4 DRAM with 512MX32 organization, operating at 1.8V. It features a max clock frequency of 1869.1 MHz and supports multi-bank page burst access mode. Ideal for applications requiring high-speed synchronous memory with common I/O type in automotive electronics and industrial devices.
MT53E512M32D1ZW-046AIT:B
Micron Technology's MT53E512M32D1ZW-046AIT:B is a LPDDR4 DRAM with 512MX32 organization, operating at 2133 MHz. It features self-refresh mode, common I/O type, and AEC-Q100 screening level. Ideal for applications requiring high-speed synchronous memory with low power consumption in automotive electronics and industrial devices.
MT53D1024M32D4DT-046WT:D
LPDDR4 DRAM; No. of Terminals: 200; Package Code: VFBGA; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY; Width: 10 mm;
MT53E1G32D2FW-046AIT:B
Micron Technology's MT53E1G32D2FW-046AIT:B is a LPDDR4 DRAM with 1GX32 organization, operating at 2133 MHz. It features self-refresh capability and common I/O type, suitable for applications requiring high-speed synchronous memory with a thin profile and fine pitch package style.
MT53E512M32D1ZW-046AAT:B
Micron Technology's MT53E512M32D1ZW-046AAT:B is a LPDDR4 DRAM with 512MX32 organization, operating at 2133 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in automotive electronics due to AEC-Q100 screening level.
MT53E512M32D1ZW-046IT:B
Micron Technology's MT53E512M32D1ZW-046IT:B is a LPDDR4 DRAM with 512MX32 organization, operating at 2136.7 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data processing in a compact form factor.
MT53E1536M32D4DT-046WT:A
MT53D512M32D2DS-046AIT:D
Micron Technology's MT53D512M32D2DS-046AIT:D is a LPDDR4 DRAM with 512MX32 organization, operating at 2136.7 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data processing in automotive electronics or industrial devices.
MT53E1G32D2FW-046IT:B
Micron Technology's MT53E1G32D2FW-046IT:B is a LPDDR4 DRAM with 1GX32 organization, operating at 2136.7 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data processing in compact devices like smartphones and tablets.
MT53E256M32D2DS-046AIT:B
Micron Technology's MT53E256M32D2DS-046AIT:B is a 256MX32 LPDDR4 DRAM with a max clock frequency of 2133 MHz. It operates in synchronous mode, has a self-refresh feature, and is commonly used in automotive applications due to its AEC-Q100 screening level.
MT53D1024M32D4DT-046AAT:D
LPDDR4 DRAM; No. of Terminals: 200; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Pitch: .8 mm; Access Mode: MULTI BANK PAGE BURST;
MT53D512M32D2DS-053AUT:D
LPDDR4 DRAM; Temperature Grade: AUTOMOTIVE; No. of Functions: 1; Memory Density: 17179869184 bit; Memory Width: 32; Organization: 512MX32;
MT53E256M32D2DS-053WT:B
MT53E256M32D2DS-046IT:B
Micron Technology's MT53E256M32D2DS-046IT:B is a 256MX32 LPDDR4 DRAM with a clock frequency of 2133 MHz. It operates in an industrial temperature range and has a very thin profile package style. This memory module is commonly used in applications that require high-speed data processing and reliable performance.
MT53E256M32D2DS-053AUT:B
Micron Technology's MT53E256M32D2DS-053AUT:B is a LPDDR4 DRAM with 256MX32 organization, operating at 1866 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in automotive electronics due to AEC-Q100 screening level.
MT53E512M32D1ZW-046AUT:B
MT53E512M32D1ZW-046AUT:B by Micron Technology is a 512MX32 LPDDR4 DRAM with a clock frequency of 2133 MHz. It operates synchronously, has a common input/output type, and is suitable for applications requiring high memory density and low power consumption.
MT53D1024M32D4DT-046AIT:D
Micron Technology's MT53D1024M32D4DT-046AIT:D is a LPDDR4 DRAM with 1GX32 organization, operating at 2136.7 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data processing in automotive electronics or industrial devices.
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