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NT5CC128M16JR-EKT

Nanya Technology

NT5CC128M16JR-EKT by Nanya Technology

NT5CC128M16JR-EKT by Nanya Technology is a DDR DRAM with 128MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Ideal for industrial applications requiring high memory density and reliable performance in a compact grid array package.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 870 parts In-Stock

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870

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Vyrian

USA . 716 parts In-Stock

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716

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 393 parts In-Stock

1+ parts

$4.000

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393

$4.000

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AZTECH Wire

Italy . 828 parts In-Stock

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$13.184

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828

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Continental Prestige Electronics

USA . 4,104 parts In-Stock

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Argo Parts USA

USA . 2,984 parts In-Stock

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Authorized Procurement Solutions

USA . 2,700 parts In-Stock

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2,700

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Bastille Electronics

Australia . 50 parts In-Stock

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Overview

Enhance your system's performance with the NT5CC128M16JR-EKT by Nanya Technology. Known for their high-quality products, Nanya Technology delivers reliable DRAM solutions that are perfect for a wide range of applications. Whether you're looking to improve the speed and efficiency of your device or enhance its multitasking capabilities, this DDR DRAM memory module offers exceptional value, benefits, and advantages. Trust Nanya Technology to provide you with top-notch technology that will take your system to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package lightweight and durable, making it a good choice for portable devices.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for the data to be transferred in synchronization with a clock signal, resulting in faster and more efficient data processing.

Nominal Supply Voltage / Vsup (V): 1.35

The low nominal supply voltage ensures energy efficiency and helps in reducing power consumption, making it a cost-effective choice for devices.

No. of Terminals: 96

Having a high number of terminals allows for more connections and data transfer pathways, enhancing the performance and capacity of the DRAM chip.

Maximum Operating Temperature: 95 °C

With a high maximum operating temperature, this DRAM chip can withstand extreme conditions and maintain reliable performance even in harsh environments.

Memory Width: 16

A memory width of 16 ensures that the DRAM chip can handle data in chunks of 16 bits at a time, improving data processing speed and efficiency.

Technical Specifications

DRAM NT5CC128M16JR-EKT attributes and parameters. Explore more DRAM devices from Nanya Technology

Specs

Access Mode:

MULTI BANK PAGE BURST

Additional Features:

AUTO/SELF REFRESH

JESD-30 Code:

R-PBGA-B96

Length:

13 mm

Memory Density:

2147483648 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

96

No. of Words:

134217728 words

No. of Words Code:

128M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

95 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Maximum Supply Voltage (Vsup):

1.45 V

Minimum Supply Voltage (Vsup):

1.283 V

Nominal Supply Voltage / Vsup (V):

1.35

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

7.5 mm

Trade Compliance

NT5CC128M16JR-EKT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

Manufacturer Highlights

Nanya Technology

Nanya Technology holds innovation as our core value which is realized in the company’s dedication to research and develop, design, manufacture, marketing, and sales of Dynamic Random Access Memory (DRAM). Nanya’s commitment to research and development has enabled the company to accumulate extensive DRAM expertise and intellectual property. As a true leader in corporate citizenship, Nanya has proactively implemented green manufacturing technology. Nanya has harnessed the power of artificial intelligence (AI) to significantly upgrade production capacity and efficiency. The result is a company that provides industry leading DRAM solutions in a way that is environmentally friendly to our planet

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