Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
Micron Technology's MT48LC2M32B2P-6AIT:J is a 2MX32 Synchronous DRAM with 67108864-bit memory density. It operates at 166 MHz clock frequency, suitable for industrial applications. With a low standby current of 0.0025 Amp and common I/O type, it offers fast access time of 5.4 ns.
Median Price
$6.614
Lifecycle Status
Suppliers In-Stock
22
In-Stock Inventory
1k+
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1+ parts
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Arrow
DigiKey
$6.500
Digiode
$6.283
Nova Conductors
$6.415
Cyclops Electronics Ltd
Chip Stock
Vyrian
Dynamic Solutions
Mil-Aero Solutions, Inc.
Cogito LLC
J2 Sourcing AB
Bristol Electronics
Sensible Micro Corp
Technoshack Inc.
ACDS - Activité Composants Distribution Service
Holdelec - ElecDif-Pro
Semi Source
Connect4Technologies Inc.
ComSIT Distribution GmbH
NAC Semi
Classic Components Corporation
Corohmni
$3.805
Andel Nordic
$4.498
$4.318
Aztec Data Supply Inc.
$4.550
Semicontronic
$5.520
$5.382
$5.354
Ampacity Inc.
Corphita
$5.952
Aranea Global
$6.287
$6.035
Continental Prestige Electronics
Component Stockers USA
$13.210
$12.550
$12.160
Perfect Parts
A-Z Elektronik GmbH
RC Electronics
$6.740
$6.350
$6.220
Authorized Procurement Solutions
Futuretech Components
GreenTree Electronics
S.R.D Solutions
ChipstoGo Electronic ltd
Argo Parts USA
Speed Components Ltd (Excess)
iodParts Technologies Inc.
Computer Components Inc. - USA
Plastic/epoxy material is durable and lightweight, making the DRAM chip easy to handle and transport.
Surface mount capability allows for easy integration onto circuit boards, saving space and simplifying the manufacturing process.
Synchronous operation ensures data is transmitted and processed efficiently, resulting in faster performance.
Operates at a standard voltage of 3.3V, making it compatible with a wide range of systems and devices.
Small outline and thin profile design save space on the PCB, allowing for compact and efficient memory layout.
High maximum clock frequency allows for quick data transfer and processing speeds, ideal for demanding applications.
Being synchronous DRAM, it offers faster data transfer rates compared to asynchronous DRAM, making it suitable for high-performance computing.
DRAM MT48LC2M32B2P-6AIT:J attributes and parameters. Explore more DRAM devices from Micron Technology
Access Mode:
Maximum Access Time:
Additional Features:
Maximum Clock Frequency (fCLK):
Input/Output Type:
Interleaved Burst Length:
JESD-30 Code:
JESD-609 Code:
Length:
Memory Density:
Memory IC Type:
Memory Width:
No. of Functions:
No. of Ports:
No. of Terminals:
No. of Words:
No. of Words Code:
Operating Mode:
Maximum Operating Temperature:
Minimum Operating Temperature:
Organization:
Output Characteristics:
Package Body Material:
Package Code:
Package Equivalence Code:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Power Supplies (V):
Qualification:
Refresh Cycles:
Maximum Seated Height:
Self Refresh:
Sequential Burst Length:
Maximum Standby Current:
Sub-Category:
Maximum Supply Current:
Maximum Supply Voltage (Vsup):
Minimum Supply Voltage (Vsup):
Nominal Supply Voltage / Vsup (V):
Surface Mount:
Technology:
Temperature Grade:
Terminal Finish:
Terminal Form:
Terminal Pitch:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Width:
MT48LC2M32B2P-6AIT:J Memory ICs trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8542.32.00.02
SB
8542.32
PCN Obsolescence/ EOL - DRAM EOL 29/Apr/2020
PCN Design/Specification - LTS 08-Apr-2022
PCN Assembly/Origin - BOM Revision 21/Aug/2020
PCN Packaging - Label 12/Sep/2016
Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.
President, CEO
Sanjay Mehrotra
Executive VP, CFO
Mark J. Murphy
Executive VP, CBO
Sumit Sadana
Fab 4
Fabrication
Fab Initiation
1994
USA
Boise
Wafer Capacity
8,750
Fab 6
1997
Manassas
23,000
2006
28,000
Fab 11
2007
Taiwan
Taoyuan
34,000
Fab 16 A1
Taichung
50,000
Fab 16 A3
2021
3,000
Fab 15
2002
Japan
Hiroshima
98,000
2004
New Hiroshima DRAM Fab
2017
11,750
Fab 10W
2016
Singapore
20,000
Fab 10X
55,000
2019
18,000
Fab 10A
Fab 10N
2014
47,000
2000
32,000
2012
6,000
Fab 16 A2
2015
43,000
New Clay Fab Phase 1
2027
Clay
New Boise Fab 1
2025
Fab 16 A5
2028
Expansion Fab
2020
RN41N-I/RM
Microchip Technology
Microchip Technology's RN41N-I/RM is a telecom IC with 35 terminals, operating from -40 to 85°C. It has a supply voltage of 3.3V and is surface mountable in industrial applications. The package style is rectangular, measuring 13.2mm x 20.1mm with a seated height of 2.2mm, suitable for telecom interface functions.
LL4148
International Semiconductor
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
CRCW06031K00FKEAHP
Vishay Intertechnology
Vishay Intertechnology's CRCW06031K00FKEAHP is a fixed resistor with 1000 ohm resistance, 1% tolerance, and 0.33 W power dissipation. Ideal for surface mount applications in automotive electronics due to AEC-Q200 standard compliance and operating voltage of 75 V.
2N2222A
Texas Instruments
2N2222A by Texas Instruments is a small signal NPN bipolar junction transistor (BJT) with a max collector-emitter voltage of 40V and a max collector current of 0.8A. It is commonly used for switching applications due to its fast turn on/off times (35ns/285ns) and high transition frequency (300MHz).
SMBJ18CA
Transpro Electronics
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; JESD-609 Code: e0; Terminal Finish: Tin/Lead (Sn/Pb); Nominal Breakdown Voltage: 21.1 V; Maximum Clamping Voltage: 29.2 V;
1N4148
Capar Components
RECTIFIER DIODE; Surface Mount: NO; No. of Phases: 1; Maximum Forward Voltage (VF): 1 V; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Output Current: .15 A;
LM555CMX
Fairchild Semiconductor
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
ROHM
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .6 A;
BSS138W-7-F
Diodes Incorporated
Diodes Inc.'s BSS138W-7-F is a N-channel FET with 50V DS breakdown voltage, ideal for switching applications. It features single configuration with built-in diode, Gull Wing terminals, and operates in enhancement mode. With 0.2A max drain current and 3.5 ohm RDS(on), it's UL recognized and suitable for small outline packages at temperatures ranging from -55 to 150°C.
RC0402JR-070RL
Yageo
Yageo's RC0402JR-070RL is a SMT fixed resistor with 0 ohm resistance, rated for temperatures from -55 to 155 °C. It features METAL GLAZE/THICK FILM tech, WRAPAROUND terminals, and 0.0625 W power dissipation. Ideal for jumper applications in electronics requiring compact surface mount components.
FDV303N
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Transistor Application: SWITCHING; JESD-609 Code: e3;
LM358N
Samsung
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
1N4148WT
Diotec Semiconductor Ag
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Rfe International
RECTIFIER DIODE; Surface Mount: NO; No. of Elements: 1; Maximum Repetitive Peak Reverse Voltage: 100 V; Maximum Forward Voltage (VF): 1 V; Config: SINGLE;
BSS123NH6327XTSA1
Infineon Technologies
Infineon BSS123NH6327XTSA1 is a N-CHANNEL FET with 100V DS breakdown voltage, 0.19A ID, and 6 ohm RDS(on). Ideal for small outline applications requiring high drain current and low on-resistance. AEC-Q101 compliant for automotive use.
1N4148WS
Lite-on Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BAV99
Gec Plessey Semiconductors
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
Semiconductors
RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Maximum Forward Voltage (VF): 1 V; Maximum Operating Temperature: 200 Cel; No. of Elements: 1;
BSS138
Vishay Semiconductors
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Package Shape: RECTANGULAR; Transistor Application: SWITCHING;
Weitron Technology
RECTIFIER DIODE; Surface Mount: NO; Maximum Reverse Recovery Time: .004 us; Config: SINGLE; Maximum Output Current: .15 A; Terminal Finish: Tin/Lead (Sn/Pb);
MT8KTF51264HZ-1G9P1
Micron Technology
MT8KTF51264HZ-1G9P1 by Micron Technology is a DDR3L DRAM MODULE with 512MX64 organization. It operates in synchronous mode, has a self-refresh feature, and a nominal voltage of 1.35V. It is commonly used in commercial applications requiring high memory density and single bank page burst access mode.
K4H561638N-LCCC
Samsung's K4H561638N-LCCC DDR1 DRAM features 16MX16 organization, 200 MHz clock frequency, and 70°C max operating temp. Ideal for applications requiring high memory density and fast access times in commercial-grade devices.
MT48LC16M16A2B4-6A:G
MT48LC16M16A2B4-6A:G by Micron Technology is a 16MX16 DRAM with 3.3V supply, operating at 167MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for commercial applications requiring fast access times and high memory density in a compact grid array package.
IS42S32400F-6BL-TR
Integrated Silicon Solution
IS42S32400F-6BL-TR by Integrated Silicon Solution is a 4MX32 Synchronous DRAM with 3.3V supply, 166 MHz clock frequency, and 5.4 ns access time. Ideal for commercial applications requiring high memory density and fast data processing in a compact grid array package.
AS4C256M16D4-75BCN
Alliance Memory
Alliance Memory's AS4C256M16D4-75BCN is a 256MX16 DDR4 DRAM with 1333 MHz clock frequency, 95°C max temp, and 1.2V nominal supply. Ideal for applications requiring high-speed synchronous operation in compact electronic devices.
KM44C256CP-7
Samsung's KM44C256CP-7 is a 256Kx4 DRAM with 70ns access time, operating at 5V. It features a 3-STATE output and fast page access mode. Ideal for commercial applications requiring high-speed memory with a memory density of 1048576 bits.
MT48LC4M32B2B5-6AAAT:L
Micron Technology's MT48LC4M32B2B5-6AAAT:L is a 4MX32 Synchronous DRAM with 32-bit memory width. Operating at 3.3V, it offers a max access time of 5.4ns and self-refresh capability. Ideal for industrial applications requiring high-speed memory performance in a compact GRID ARRAY package style.
MT46H128M16LFB7-6IT:B
Micron Technology's MT46H128M16LFB7-6IT:B is a DDR1 DRAM with 128MX16 organization, operating at 1.8V. It features synchronous operation, self-refresh capability, and a max access time of 5ns. Ideal for industrial applications requiring high memory density and fast data processing.
MT41K256M16HA-125IT:E
Micron Technology's MT41K256M16HA-125IT:E is a DDR3L DRAM with 256MX16 organization, operating at 800 MHz. It features a low supply voltage of 1.35V and offers 4294967296 bits memory density. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
MT48LC32M16A2TG-75IT:C
Micron Technology's MT48LC32M16A2TG-75IT:C is a 32MX16 DRAM with 3.3V supply, operating at 133MHz clock frequency. Ideal for industrial applications, it offers synchronous operation, self-refresh capability, and a compact thin profile package.
S27KL0642DPBHI023
Cypress Semiconductor
HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 3; Maximum Access Time: 35 ns;
HY5DU573222FP-33
Sk Hynix
SK Hynix's HY5DU573222FP-33 is a DDR1 DRAM with 8MX32 organization, operating at 300 MHz. It features 144 terminals in a low profile grid array package, suitable for applications requiring high-speed synchronous memory access and common I/O type. With a max clock frequency of 300 MHz and 268435456-bit memory density, it offers fast data processing capabilities for commercial-grade systems.
K4J10324QD-HJ1A
Samsung's K4J10324QD-HJ1A DDR3 DRAM features 32MX32 organization, 1000 MHz clock frequency, and 32M word code. Ideal for high-performance applications requiring fast data processing and storage with a max supply current of 1000 mA.
M393B2G70BH0-YH9
Samsung's M393B2G70BH0-YH9 DRAM features 240 terminals, 1.35V supply voltage, and a max clock frequency of 667MHz. Ideal for high-performance computing applications requiring fast memory access and data processing capabilities.
K4F6E3S4HM-MGCJ
Samsung Electro-mechanics
Samsung Electro-mechanics' K4F6E3S4HM-MGCJ is a LPDDR4 DRAM with 512MX32 organization, 17179869184 bit memory density, and operates at 1.1V. It features a GRID ARRAY package style and is suitable for applications requiring high-speed data processing in devices such as smartphones and tablets.
MT53D512M32D2DS-046AIT:D
Micron Technology's MT53D512M32D2DS-046AIT:D is a LPDDR4 DRAM with 512MX32 organization, operating at 2136.7 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data processing in automotive electronics or industrial devices.
NT5CC256M16ER-EKH
Nanya Technology
NT5CC256M16ER-EKH by Nanya Technology is a DDR DRAM with 256MX16 organization, operating at 1.35V. It features synchronous operation, multi-bank page burst access mode, and industrial temperature grade. Suitable for applications requiring high memory density and fast data processing in compact devices.
MT41K512M8DA-107AIT:P
Micron Technology's MT41K512M8DA-107AIT:P is a DDR3L DRAM with 512MX8 organization, operating at 934.57 MHz. It features a thin profile grid array package suitable for industrial applications requiring high memory density and common I/O type. With AEC-Q100 screening level, it offers synchronous operation and self-refresh capability.
MT41K128M16JT-125AAT:K
Micron Technology's MT41K128M16JT-125AAT:K is a DDR3L DRAM with 128MX16 organization, operating at 800 MHz. It features a thin profile grid array package, operates at 1.35V, and has an industrial temperature grade. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
MT48LC16M16A2TG-75IT:DTR
Micron Technology's MT48LC16M16A2TG-75IT:DTR is a 16MX16 DRAM with 3.3V supply, operating at 133MHz clock frequency. Ideal for industrial applications, it offers 16777216 words memory density and supports synchronous operation with self-refresh capability.
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MT48LC16M16A2P-6AIT:GTR
Micron Technology's MT48LC16M16A2P-6AIT:GTR is a 16MX16 DRAM with 16777216 words and 268435456 bit memory density. It operates at 3.3V, has a peak reflow temperature of 260°C, and supports industrial temperature grade applications. With synchronous operation and four bank page burst access mode, it is ideal for high-performance computing systems.
MT48LC16M16A2P-6AIT:G
Micron Technology's MT48LC16M16A2P-6AIT:G is a 16MX16 Synchronous DRAM with 167 MHz clock frequency, 3.3V supply voltage, and -40 to 85°C operating temperature range. Ideal for industrial applications requiring high-speed memory access with a compact form factor and low power consumption.
MT48LC16M16A2P-6A:GTR
Micron Technology's MT48LC16M16A2P-6A:GTR is a 16MX16 Synchronous DRAM with 16777216 words, 268435456 bit memory density, and 5.4 ns max access time. It operates at 3.3V, has a temperature range of 0-70°C, and is suitable for commercial applications requiring high-speed memory performance.
MT48LC16M16A2P-6A:G
MT48LC16M16A2P-6A:G by Micron Technology is a 16MX16 SDRAM with 3.3V supply, 167MHz clock frequency, and 70°C operating temp. Ideal for commercial applications requiring high-speed memory access in a small outline package.
MT48LC4M32B2P-6AIT:LTR
Micron Technology's MT48LC4M32B2P-6AIT:LTR is a 4MX32 Synchronous DRAM with 3.3V supply voltage, operating at -40 to 85 °C. It features self-refresh mode, industrial temperature grade, and offers 5.4 ns max access time. Ideal for applications requiring high-speed memory performance in harsh environments.
MT48LC16M16A2P-6AXIT:G
Micron Technology's MT48LC16M16A2P-6AXIT:G is a 16MX16 Synchronous DRAM with 167 MHz clock frequency, operating at 3.3V. It features a small outline, thin profile package and offers 8192 refresh cycles. Ideal for industrial applications requiring high-speed memory with common I/O type and self-refresh capability.
MT48LC4M16A2P-6AIT:J
Micron Technology's MT48LC4M16A2P-6AIT:J is a 4MX16 DRAM with 3.3V supply, operating at 167MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring fast access times and high memory density.
MT48LC16M16A2B4-6AIT:G
MT48LC16M16A2B4-6AIT:G by Micron Technology is a 16MX16 Synchronous DRAM with 167 MHz clock frequency, 5.4 ns access time, and 8192 refresh cycles. It is ideal for industrial applications requiring high-speed memory operations in a compact grid array package with very thin profile and fine pitch design.
MT48LC16M16A2P-6AXIT:GTR
Micron Technology's MT48LC16M16A2P-6AXIT:GTR is a 16MX16 Synchronous DRAM with 167 MHz clock frequency, 5.4 ns access time, and 8192 refresh cycles. Ideal for industrial applications requiring high-speed memory operations in a compact form factor.
MT48LC4M32B2P-6AIT:L
Micron Technology's MT48LC4M32B2P-6AIT:L is a 4MX32 DRAM with 3.3V supply, operating at -40 to 85 °C. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring fast access time, high memory density, and low power consumption.
MT48LC16M16A2P-6AAIT:G
Micron Technology's MT48LC16M16A2P-6AAIT:G is a 16MX16 DRAM with 3.3V supply, operating at -40 to 85 °C. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring fast access times and high memory density in a compact small outline package.
MT48LC16M16A2P-6AIT
MT48LC16M16A2P-6AIT by Micron Technology is a 16MX16 Synchronous DRAM with 167 MHz clock frequency, 5.4 ns access time, and 8192 refresh cycles. It is ideal for industrial applications requiring high-speed memory operations in a compact package with common I/O type and self-refresh capability.
MT48LC4M32B2P-6AXIT:L
Micron Technology's MT48LC4M32B2P-6AXIT:L is a 3.3V, 4MX32 Synchronous DRAM with 5.4ns access time and 134217728-bit memory density. Ideal for industrial applications, it features self-refresh mode, operates synchronously, and supports four-bank page burst access mode.
MT48LC8M16A2P-6A:L
Micron Technology's MT48LC8M16A2P-6A:L is a 3.3V Synchronous DRAM with 8MX16 organization, operating at up to 167 MHz clock frequency. It features common I/O type, self-refresh mode, and supports four-bank page burst access. Ideal for commercial applications requiring high-speed memory with low power consumption.
MT48LC4M16A2P-6AIT:JTR
Micron Technology's MT48LC4M16A2P-6AIT:JTR is a 3.3V Synchronous DRAM with 4MX16 organization, operating at up to 167MHz clock frequency. Ideal for industrial applications, it offers a memory density of 67108864 bits and supports common I/O type with self-refresh capability.
MT48LC8M16A2P-6AIT:L
SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: TSOP2; Refresh Cycles: 4096; Package Shape: RECTANGULAR;
MT48LC2M32B2P-6AIT:JTR
Micron Technology's MT48LC2M32B2P-6AIT:JTR is a 3.3V, 2MX32 Synchronous DRAM with 5.4ns access time. Ideal for industrial applications, it features self-refresh mode and operates at temperatures ranging from -40 to 85°C. The memory density is 67108864 bits with a memory width of 32 bits.
MT48LC4M16A2P-6A:J
Micron Technology's MT48LC4M16A2P-6A:J is a 4MX16 Synchronous DRAM with 3.3V supply, operating at 167MHz. It features a small outline package and offers common I/O type for applications requiring fast access times and high memory density.
MT48LC16M16A2P-75IT:DTR
Micron Technology's MT48LC16M16A2P-75IT:DTR is a 16MX16 Synchronous DRAM with 3.3V supply, operating at 133MHz. It features 16777216 words, FOUR BANK PAGE BURST access mode, and supports sequential burst lengths of 1,2,4,8. Ideal for industrial applications requiring high-speed memory performance in a compact form factor.
MT48LC8M16A2P-6AIT:LTR
Micron Technology's MT48LC8M16A2P-6AIT:LTR is a 3.3V, 8MX16 CMOS Synchronous DRAM with 8388608 words and 134217728 bit memory density. It operates in industrial temperature range (-40 to 85 °C) with self-refresh capability. Ideal for applications requiring fast access time (5.4 ns) and four bank page burst access mode.
Supply Digital Components
$106.00
$54.25
$11.90
$7.29
Quantity
12,000 In-Stock
Total price ≈ $80,197.29
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